摘要:
An LED with a semiconductor light emitting element that emits a blue or a blue-violet light, and a fluorescent material that absorbs some or all of the light emitted from the element and emits a fluorescent light of a wavelength different from the absorbed light. The fluorescent material is a mixed fluorescent material obtained by mixing a first fluorescent material that emits a blue-green or a green light, a second fluorescent material that has a peak emission wavelength longer than that of the first fluorescent material and emits a green or a yellow-green light, a third fluorescent material that has a 1 peak emission wavelength longer than that of the second fluorescent material and emits a yellow-green, a yellow or a yellow-red light, and a fourth fluorescent material that has a peak emission wavelength longer than that of the third fluorescent material and emits a yellow-red or a red light.
摘要:
An LED with a semiconductor light emitting element that emits a blue or a blue-violet light, and a fluorescent material that absorbs some or all of the light emitted from the element and emits a fluorescent light of a wavelength different from the absorbed light. The fluorescent material is a mixed fluorescent material obtained by mixing a first fluorescent material that emits a blue-green or a green light, a second fluorescent material that has a peak emission wavelength longer than that of the first fluorescent material and emits a green or a yellow-green light, a third fluorescent material that has a 1 peak emission wavelength longer than that of the second fluorescent material and emits a yellow-green, a yellow or a yellow-red light, and a fourth fluorescent material that has a peak emission wavelength longer than that of the third fluorescent material and emits a yellow-red or a red light.
摘要:
An incandescent lamp color light emitting diode lamp comprises a semiconductor blue light emitting diode chip having a center emission wavelength in a range of from 400 nm to 480 nm and a phosphor that absorbs light emitted from the diode chip to emit light having a different wavelength than the light emitted from the diode chip. The phosphor is represented by a general formula of Mp(Si, Al)12(O, N)16:Eu2+q. The main phase is an α-SiAlON phosphor having an α SiAlON structure, wherein M is at least one element of Ca, Y, Mg, Li, Sc, Pr, Nd, Pm, Sm, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, and Sr and p is from 0.75 to 1.0; and q is between 0.02 and 0.09. The diode lamp emits light having an emission color produced by a mixture of the light emitted from the semiconductor blue light emitting and the light emitted from the α-SiAlON. The chromaticity range thereof falls within the range defined by chromaticity coordinates (x, y) of (0.4775, 0.4283), (0.4594, 0.3971), (0.4348, 0.4185), and (0.4214, 0.3887) on the XYZ chromaticity diagram.
摘要:
A light-emitting device and illumination apparatus using the same are provided. The light-emitting device includes a semiconductor light-emitting element that emits blue-violet or blue light and a fluorescent material that absorbs the light emitted by the semiconductor light-emitting element and emits fluorescence of wavelengths different from the light, wherein the fluorescent material includes a mixture of a first fluorescent material, a second fluorescent material that has a longer emission wavelength than that of the first fluorescent material, and a third fluorescent material that has a longer emission wavelength than the second fluorescent material, and the first fluorescent material is a europium-activated β-SiAlON fluorescent material, the second fluorescent material is a europium-activated α-SiAlON fluorescent material, and the third fluorescent material is a nitride crystalline red fluorescent material of a general formula of (Ca,Eu)AlSiN3. The illumination apparatus includes a light source including a light emitting device as described above.
摘要:
An incandescent lamp color light emitting diode lamp comprises a semiconductor blue light emitting diode chip having a center emission wavelength in a range of from 400 nm to 480 nm and a phosphor that absorbs light emitted from the diode chip to emit light having a different wavelength than the light emitted from the diode chip. The phosphor is represented by a general formula of Mp(Si, Al)12(O, N)16:Eu2+q. The main phase is an α-SiAlON phosphor having an α SiAlON structure, wherein M is at least one element of Ca, Y, Mg, Li, Sc, Pr, Nd, Pm, Sm, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, and Sr and p is from 0.75 to 1.0; and q is between 0.02 and 0.09. The diode lamp emits light having an emission color produced by a mixture of the light emitted from the semiconductor blue light emitting and the light emitted from the α-SiAlON. The chromaticity range thereof falls within the range defined by chromaticity coordinates (x, y) of (0.4775, 0.4283), (0.4594, 0.3971), (0.4348, 0.4185), and (0.4214, 0.3887) on the XYZ chromaticity diagram.
摘要:
One preferred embodiment according to the present invention, there is provided an oxynitride phosphor and a light emitting device using the same that is able to reduce production costs and chromaticity shifts. The phosphor is represented by a general formula of (Ca1-zYz)x(Si, Al)12(O, N)16:Eu2+y, and has a main phase of substantially an alpha SiAlON crystal structure, wherein the value z is larger than 0 and smaller than 0.15.
摘要:
Powdered fluorescent material excited by visible light that emits visible light has particles with particle sizes of 20 μm or less in the content of below 2% by mass. The method for manufacturing a powdered fluorescent material comprises the steps of: sintering raw material powder of the fluorescent material; and chemically processing the sintered powder after said sintering with acid solution.
摘要:
One preferred embodiment according to the present invention, there is provided an oxynitride phosphor and a light emitting device using the same that is able to reduce production costs and chromaticity shifts. The phosphor is represented by a general formula of (Ca1−zYz)x(Si, Al)12(O, N)16:Eu2+y, and has a main phase of substantially an alpha SiAlON crystal structure, wherein the value z is larger than 0 and smaller than 0.15.
摘要:
A light-emitting device and illumination apparatus using the same are provided. The light-emitting device includes a semiconductor light-emitting element that emits blue-violet or blue light and a fluorescent material that absorbs the light emitted by the semiconductor light-emitting element and emits fluorescence of wavelengths different from the light, wherein the fluorescent material includes a mixture of a first fluorescent material, a second fluorescent material that has a longer emission wavelength than that of the first fluorescent material, and a third fluorescent material that has a longer emission wavelength than the second fluorescent material, and the first fluorescent material is a europium-activated β-SiAlON fluorescent material, the second fluorescent material is a europium-activated α-SiAlON fluorescent material, and the third fluorescent material is a nitride crystalline red fluorescent material of a general formula of (Ca,Eu)AlSiN3. The illumination apparatus includes a light source including a light emitting device as described above.
摘要:
A SiAlON phosphor represented by a general formula (1) Lup(Si, Al)12(O, N)16:Euq (1) wherein at least a main phase has an alpha SiAlON crystal structure; and 0.25≦p≦0.65.