Silicon carbide single crystal wafer and method for manufacturing the same
    5.
    发明授权
    Silicon carbide single crystal wafer and method for manufacturing the same 有权
    碳化硅单晶晶片及其制造方法

    公开(公告)号:US08790461B2

    公开(公告)日:2014-07-29

    申请号:US11661195

    申请日:2005-08-24

    IPC分类号: C30B29/36

    摘要: The invention provides a method for manufacturing the silicon carbide single crystal wafer capable of improving the utilization ratio of the bulk silicon carbide single crystal, capable of improving characteristics of the element and capable of improving cleavability, and the silicon carbide single crystal wafer obtained by the manufacturing method. An α(hexagonal)-silicon carbide single crystal wafer which has a flat homoepitaxial growth surface with a surface roughness of 2 nm or less and which has an off-angle from the (0001)c plane of 0.4° or less.

    摘要翻译: 本发明提供了一种能够提高块状碳化硅单晶的利用率的能够提高元件的特性并且能够提高可切割性的碳化硅单晶晶片的制造方法以及由上述 制造方法。 具有表面粗糙度为2nm以下且与(0001)c面成偏角为0.4°以下的平坦的同质外延生长面的α(六方晶) - 碳化硅单晶晶片。

    Keyboard apparatus
    7.
    发明申请
    Keyboard apparatus 失效
    键盘装置

    公开(公告)号:US20070125626A1

    公开(公告)日:2007-06-07

    申请号:US11546312

    申请日:2006-10-12

    IPC分类号: H01H13/72

    摘要: A keyboard apparatus has a base component arranged under key switches. The base component has an embossed portion. A cooling material is filled into the embossed portion. The embossed portion may be formed continuously between the key switches along the length of key rows over substantially the entire length from the left end to the right end of the rows. On the base component, a membrane sheet having contact point portions corresponding to the key switches may be arranged. The membrane sheet may have a heat dissipation hole at a part opposing the embossed portion.

    摘要翻译: 键盘装置具有配置在键开关下方的基本部件。 基座部件具有压花部分。 将冷却材料填充到压花部分中。 压花部分可以沿着键排的长度在键的左端到右端的基本上整个长度上连续地形成在键开关之间。 在基础部件上,可以布置具有与键开关相对应的接触点部分的膜片。 膜片可以在与压纹部分相对的部分处具有散热孔。