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    METHOD OF MANUFACTURING A MAGNETIC HEAD INCLUDING SHIELD LAYERS WHICH SURROUND A MR ELEMENT
    1.
    发明申请
    METHOD OF MANUFACTURING A MAGNETIC HEAD INCLUDING SHIELD LAYERS WHICH SURROUND A MR ELEMENT 有权
    制造磁头的方法，其中包括围绕MR元件的屏蔽层

    公开(公告)号：US20120240390A1

    公开(公告)日：2012-09-27

    申请号：US13052674

    申请日：2011-03-21

    申请人： Naomichi Degawa ,  Takumi Yanagisawa ,  Satoshi Miura ,  Yoshikazu Sawada ,  Takahiko Machita ,  Kenzo Makino ,  Takekazu Yamane ,  Shohei Kawasaki

    发明人： Naomichi Degawa ,  Takumi Yanagisawa ,  Satoshi Miura ,  Yoshikazu Sawada ,  Takahiko Machita ,  Kenzo Makino ,  Takekazu Yamane ,  Shohei Kawasaki

    IPC分类号： G11B5/127

    CPC分类号： G11B5/3912 ,  G01R33/093 ,  G11B5/3163 ,  G11B5/398 ,  H01L43/12 ,  Y10T29/49021 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

    摘要： A method of manufacturing a magnetic head that includes a magneto resistance effect (MR) element of which an electrical resistance changes according to an external magnetic field and shield layers surrounding the MR element, and that reads information of a magnetic recording medium is provided. The manufacturing method includes: a first step of forming a multilayer film including a plurality of layers configuring the MR element on a first shield layer; a second step of removing unnecessary portions of the multilayer film positioned on both sides so as to configure the MR element; a third step of forming an insulating layer on a surface exposed by removing the unnecessary portions; a fourth step of forming a soft magnetic layer covering the MR element in an integrated manner at once on both sides of the MR element and on the MR element so as to configure a second shield layer including the soft magnetic layer; and a fifth step of forming an anisotropy application layer on the second shield layer, the anisotropy application layer providing exchange anisotropy to the soft magnetic layer so as to magnetize the soft magnetic layer in a predetermined direction.

    摘要翻译： 提供一种制造磁头的方法，该磁头包括根据外部磁场电阻变化的磁阻效应（MR）元件和围绕MR元件的屏蔽层，并且读取磁记录介质的信息。 该制造方法包括：第一步骤，在第一屏蔽层上形成包括构成MR元件的多个层的多层膜; 去除位于两侧的多层膜的不需要部分以构成MR元件的第二步骤; 第三步骤，通过去除不需要的部分在暴露的表面上形成绝缘层; 在MR元件和MR元件的两侧上一体地形成覆盖MR元件的软磁性层的第四步骤，以构成包括该软磁性层的第二屏蔽层; 以及在所述第二屏蔽层上形成各向异性施加层的第五步骤，所述各向异性施加层向所述软磁性层提供交换各向异性，以沿预定方向磁化所述软磁性层。

    CPP-TYPE MAGNETO RESISTIVE EFFECT ELEMENT HAVING A PAIR OF MAGNETIC LAYERS
    8.
    发明申请
    CPP-TYPE MAGNETO RESISTIVE EFFECT ELEMENT HAVING A PAIR OF MAGNETIC LAYERS 审中-公开
    具有磁性层对的CPP型MAGNETO电阻效应元件

    公开(公告)号：US20090174971A1

    公开(公告)日：2009-07-09

    申请号：US11968788

    申请日：2008-01-03

    申请人： Yoshihiro Tsuchiya ,  Shinji Hara ,  Tomohito Mizuno ,  Satoshi Miura ,  Takumi Yanagisawa

    发明人： Yoshihiro Tsuchiya ,  Shinji Hara ,  Tomohito Mizuno ,  Satoshi Miura ,  Takumi Yanagisawa

    IPC分类号： G11B5/39 ,  G11B5/127

    CPC分类号： H01L43/10 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3909 ,  G11B5/3929 ,  G11B2005/3996

    摘要： A magnetoresistance effect element comprises: a pair of magnetic layers whose magnetization directions form a relative angle therebetween that is variable depending on an external magnetic field; and a crystalline spacer layer sandwiched between the pair of magnetic layers; wherein sense current may flow in a direction that is perpendicular to a film plane of the pair of magnetic layers and the spacer layer. The spacer layer includes a crystalline oxide, and either or both magnetic layers whose magnetization direction is variable depending on the external magnetic field has a layer configuration in which a CoFeB layer is sandwiched between a CoFe layer and a NiFe layer and is positioned between the spacer layer and the NiFe layer.

    摘要翻译： 磁阻效应元件包括：一对磁性层，其磁化方向形成其间的相对角度，其可根据外部磁场而变化; 以及夹在所述一对磁性层之间的结晶间隔层; 其中感测电流可以在垂直于一对磁性层和间隔层的膜平面的方向上流动。 间隔层包括结晶氧化物，并且其磁化方向根据外部磁场而变化的任一个或两个磁性层具有其中CoFeB层夹在CoFe层和NiFe层之间并位于间隔物之间​​的层构造 层和NiFe层。