METHOD OF MANUFACTURING OPTICAL SEMICONDUCTOR DEVICE, OPTICAL SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING OPTICAL SEMICONDUCTOR APPARATUS
    1.
    发明申请
    METHOD OF MANUFACTURING OPTICAL SEMICONDUCTOR DEVICE, OPTICAL SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING OPTICAL SEMICONDUCTOR APPARATUS 审中-公开
    制造光学半导体器件的方法,光学半导体器件以及制造光学半导体器件的方法

    公开(公告)号:US20100006888A1

    公开(公告)日:2010-01-14

    申请号:US12498482

    申请日:2009-07-07

    IPC分类号: H01L33/00 H01L21/56

    摘要: Provided is a method of manufacturing an optical semiconductor device, the method including: providing a resin layer on a light-emitting substrate to cover a principle surface of the light-emitting substrate, the light-emitting substrate including a pair of electrodes in each section of the principle surface, the resin layer including multiple holes each exposing two of the electrodes located adjacent to each other but in the different sections; providing post electrodes respectively on all the paired electrodes formed in all the sections by filling a conductive material in the holes of the resin layer on the principal surface; and forming multiple optical semiconductor devices by cutting the light-emitting substrate into sections, the light-emitting substrate provided with the post electrodes respectively on all the paired electrodes formed in all the sections.

    摘要翻译: 提供一种制造光半导体器件的方法,该方法包括:在发光基板上设置树脂层以覆盖发光基板的主表面,所述发光基板在每个部分中包括一对电极 所述树脂层包括多个孔,每个孔暴露位于彼此相邻但在不同部分中的两个电极; 通过在主表面上的树脂层的孔中填充导电材料,分别在所有部分形成的所有成对电极上分别提供柱状电极; 并且通过将发光基板切割成多个部分形成多个光学半导体器件,分别在所有部分上形成的所有成对电极上设置有柱状电极的发光基板。

    SEMICONDUCTOR PACKAGE AND METHOD FOR MANUFACTURING THE SAME
    2.
    发明申请
    SEMICONDUCTOR PACKAGE AND METHOD FOR MANUFACTURING THE SAME 失效
    半导体封装及其制造方法

    公开(公告)号:US20090079046A1

    公开(公告)日:2009-03-26

    申请号:US12237639

    申请日:2008-09-25

    IPC分类号: H01L23/495 H01L21/60

    摘要: A semiconductor package includes a semiconductor device having a first main surface and a second main surface, a first electrode plate provided on the first main surface, a second electrode plate provided on the second main surface, and a wiring substrate provided between the semiconductor device and the first electrode plate, in which a plurality of opening portions in the side surface of a protruding portion provided on the first electrode plate are engaged respectively with a plurality of engaging portions which face the opening portions and which are provided on the inner side surface of an intrusion opening portion in the wiring substrate into which the protruding portion is intruded.

    摘要翻译: 半导体封装包括具有第一主表面和第二主表面的半导体器件,设置在第一主表面上的第一电极板,设置在第二主表面上的第二电极板,以及设置在半导体器件和 第一电极板,其中设置在第一电极板上的突出部分的侧表面中的多个开口部分分别与面对开口部分的多个接合部分接合,并且设置在第一电极板的内侧表面上 所述布线基板中的入射开口部分突出部分被插入其中。

    POWER SEMICONDUCTOR MODULE
    3.
    发明申请
    POWER SEMICONDUCTOR MODULE 有权
    功率半导体模块

    公开(公告)号:US20090045490A1

    公开(公告)日:2009-02-19

    申请号:US12190941

    申请日:2008-08-13

    申请人: Naotake WATANABE

    发明人: Naotake WATANABE

    IPC分类号: H01L23/495

    摘要: Included are a semiconductor package, a first bus bar, a second bus bar and a soldering control unit. The semiconductor package includes a power semiconductor element, a first electrode plate and a second electrode plate. The first bus bar is a conductive member which is soldered onto the main surface of the first electrode plate through a first solder member. The second bus bar is a conductive member which is soldered onto the main surface of the second electrode plate through a second solder member. The soldering control unit is provided on each of the main surface of the first bus bar to which the first electrode plate is soldered and the main surface of the second bus bar to which the second electrode plate is soldered, and controls the solder joint thickness.

    摘要翻译: 包括半导体封装,第一母线,第二母线和焊接控制单元。 半导体封装包括功率半导体元件,第一电极板和第二电极板。 第一母线是通过第一焊料焊接到第一电极板的主表面上的导电构件。 第二母线是通过第二焊料焊接到第二电极板的主表面上的导电构件。 焊接控制单元设置在第一汇流条的第一电极板被焊接的主表面和焊接第二电极板的第二汇流条的主表面上的每个主表面上,并控制焊点厚度。