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1.发明申请Method for Reducing Thickness of Interfacial Layer, Method for Forming High Dielectric Constant Gate Insulating Film, High Dielectric Constant Gate Insulating Film, High Dielectric Constant Gate Oxide Film, and Transistor Having High Dielectric Constant Gate Oxide Film 失效降低界面层厚度的方法，形成高介电常数栅极绝缘膜的方法，高介电常数栅极绝缘膜，高介电常数栅极氧化膜和具有高介电常数栅极氧化膜的晶体管公开(公告)号：US20140061872A1
公开(公告)日：2014-03-06
申请号：US14046339
申请日：2013-10-04
Applicant: National Institute for Materials Science
Inventor： Naoto UMEZAWA , Toyohiro CHIKYO , Toshihide NABATAME
IPC: H01L29/51
CPC classification number: H01L29/51 , H01L21/02181 , H01L21/02183 , H01L21/02194 , H01L21/022 , H01L21/02266 , H01L21/0228 , H01L21/28194 , H01L21/823842 , H01L21/823857 , H01L29/513 , H01L29/517 , H01L29/7833
Abstract: To provide a method for reducing a thickness of an interfacial layer, which contains: (a) forming a film of an oxide of a first metal on a semiconductor layer via an oxide film of a semiconductor serving as an interfacial layer; and (b) forming a film of an oxide of a second metal on the film of the oxide of the first metal, where the second metal has higher valency than that of the first metal.
Abstract translation: 提供一种减小界面层的厚度的方法，该方法包括：（a）通过半导体用作界面层的氧化膜在半导体层上形成第一金属的氧化物的膜; 和（b）在所述第一金属的氧化物的膜上形成第二金属的氧化物的膜，其中所述第二金属具有比所述第一金属更高的化合价。
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