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公开(公告)号：US20220021182A1
公开(公告)日：2022-01-20
申请号：US16928000
申请日：2020-07-14
发明人： Chao-Hsin Wu , Chien-Ting Tung , Shu-Wei Chang
摘要： A transistor for emitting laser with a fixed frequency includes a first region, a second region, at least one quantum well, and a third region. The at least one quantum well is installed in the second region, and the second region is coupled between the first region and the third region. When one of the first region, the second region, and the third region receives two signals, or two of the first region, the second region, and the third region receive the two signals respectively, the at least one quantum well emits the laser with the fixed frequency.
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公开(公告)号：US11177633B1
公开(公告)日：2021-11-16
申请号：US16939053
申请日：2020-07-26
发明人： Chao-Hsin Wu , Shih-Kun Lin , Hsi-Han Chen
摘要： A manufacturing method of a device for generating terahertz radiation includes forming a distributed feedback laser epitaxy module; etching the distribution feedback laser epitaxy module corresponding to a first window to a predetermined depth; forming an indium gallium arsenide epitaxy layer above the distributed feedback laser epitaxy module corresponding to the first window; etching out the indium gallium arsenide epitaxy layer corresponding to a second window to expose the distributed feedback epitaxy module corresponding to the second window; forming a first electrode, a grating, and an antenna above an upper surface of the distributed feedback laser epitaxy module, an upper surface of the indium gallium arsenide epitaxy layer, and the distributed feedback laser epitaxy module corresponding to the second window, respectively; forming a second electrode above a lower surface of the distributed feedback laser epitaxy module; and forming two metal wires between the grating and the antenna.
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公开(公告)号：US20220029389A1
公开(公告)日：2022-01-27
申请号：US16940376
申请日：2020-07-27
发明人： Chao-Hsin Wu , Chieh Lo , Steve Meng-Yuan Hong
IPC分类号： H01S5/40
摘要： A distributed feedback (DFB) laser array includes a substrate, a semiconductor stacked structure, a first electrode layer, and a second electrode layer. The semiconductor stacked structure is formed above a surface of the substrate and includes two light-emitting modules and a tunnel junction. Each light-emitting module of the two light-emitting modules includes an active layer, a first cladding layer, and a second cladding layer. The active layer is installed between the first cladding layer and the second cladding layer, and the active layer has multiple lasing spots along a first direction, wherein the multiple lasing spots are used for generating multiple lasers. The tunnel junction is installed between the two light-emitting modules. The first electrode layer is formed above the semiconductor stacked structure. The second electrode layer is formed above another surface of the substrate.
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公开(公告)号：US20220021186A1
公开(公告)日：2022-01-20
申请号：US16932839
申请日：2020-07-20
发明人： Chao-Hsin Wu , Szu-Yu Min , Hao-Tien Cheng
摘要： A vertical-cavity surface emitting laser includes a substrate, a first reflector, an active region, an oxide layer, a second reflector, and a circular metal electrode. The first reflector is formed above the substrate. The active region is formed above the first reflector, and includes at least one quantum well. The at least one quantum well generates a laser beam with a plurality of modes. The oxide layer is formed above the active region and includes an oxide aperture. The second reflector is formed above the oxide layer. The circular metal electrode is formed in a circular concave in the second reflector. The circular metal electrode reflects other modes of the laser beam with the plurality of modes except for a fundamental mode and receive an operational voltage. A window exists between the circular concave and lets the laser beam with the fundamental mode pass.
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公开(公告)号：US11749965B2
公开(公告)日：2023-09-05
申请号：US16928000
申请日：2020-07-14
发明人： Chao-Hsin Wu , Chien-Ting Tung , Shu-Wei Chang
CPC分类号： H01S5/06203 , H01S5/06206 , H01S5/34 , B82Y10/00 , B82Y20/00
摘要： A transistor for emitting laser with a fixed frequency includes a first region, a second region, at least one quantum well, and a third region. The at least one quantum well is installed in the second region, and the second region is coupled between the first region and the third region. When one of the first region, the second region, and the third region receives two signals, or two of the first region, the second region, and the third region receive the two signals respectively, the at least one quantum well emits the laser with the fixed frequency.
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公开(公告)号：US11532924B2
公开(公告)日：2022-12-20
申请号：US16940376
申请日：2020-07-27
发明人： Chao-Hsin Wu , Chieh Lo
IPC分类号： H01S5/40
摘要： A distributed feedback (DFB) laser array includes a substrate, a semiconductor stacked structure, a first electrode layer, and a second electrode layer. The semiconductor stacked structure is formed above a surface of the substrate and includes two light-emitting modules and a tunnel junction. Each light-emitting module of the two light-emitting modules includes an active layer, a first cladding layer, and a second cladding layer. The active layer is installed between the first cladding layer and the second cladding layer, and the active layer has multiple lasing spots along a first direction, wherein the multiple lasing spots are used for generating multiple lasers. The tunnel junction is installed between the two light-emitting modules. The first electrode layer is formed above the semiconductor stacked structure. The second electrode layer is formed above another surface of the substrate.
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公开(公告)号：US11316039B2
公开(公告)日：2022-04-26
申请号：US16937321
申请日：2020-07-23
发明人： Chao-Hsin Wu , Li-Cheng Chang , Cheng-Jia Dai , Shun-Cheng Yang
IPC分类号： H01L29/778 , H01L29/205 , H01L29/66 , H01L29/207 , H01L29/10 , H01L29/78
摘要： A method of manufacturing a semiconductor device is provided. The method includes forming a channel layer and an active layer over a substrate; forming a doped epitaxial layer over the active layer; patterning the doped epitaxial layer, the active layer, and the channel layer to form a fin structure comprising a doped epitaxial fin portion, an active fin portion below the doped epitaxial fin portion, and a channel fin portion below the active fin portion; removing the doped epitaxial fin portion; and forming a gate electrode at least partially extending along a sidewall of the fin structure to form a Schottky barrier between the gate electrode and the fin structure after removing the doped epitaxial fin portion.
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公开(公告)号：US11532923B2
公开(公告)日：2022-12-20
申请号：US16932839
申请日：2020-07-20
发明人： Chao-Hsin Wu , Szu-Yu Min , Hao-Tien Cheng
摘要： A vertical-cavity surface emitting laser includes a substrate, a first reflector, an active region, an oxide layer, a second reflector, and a circular metal electrode. The first reflector is formed above the substrate. The active region is formed above the first reflector, and includes at least one quantum well. The at least one quantum well generates a laser beam with a plurality of modes. The oxide layer is formed above the active region and includes an oxide aperture. The second reflector is formed above the oxide layer. The circular metal electrode is formed in a circular concave in the second reflector. The circular metal electrode reflects other modes of the laser beam with the plurality of modes except for a fundamental mode and receive an operational voltage. A window exists between the circular concave and lets the laser beam with the fundamental mode pass.
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公开(公告)号：US11152473B2
公开(公告)日：2021-10-19
申请号：US16875869
申请日：2020-05-15
发明人： Yu-Ming Lin , Chao-Hsin Wu , Hsun-Ming Chang , Samuel C. Pan
IPC分类号： H01L29/66 , H01L29/24 , H01L29/786 , H01L29/06 , H01L29/40 , H01L21/385 , H01L29/10 , H01L29/778 , H01L29/861 , H01L29/45 , H01L29/267 , H01L21/4757
摘要： A device includes a phosphide-containing structure, a dopant source layer and a conductive contact. The phosphide-containing structure has a first chemical element in a compound with phosphorus. The dopant source layer is over the phosphide-containing structure and has a second chemical element the same as the first chemical element. The conductive contact is over the dopant source layer.
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公开(公告)号：US10727328B2
公开(公告)日：2020-07-28
申请号：US15951988
申请日：2018-04-12
发明人： Chao-Hsin Wu , Li-Cheng Chang , Cheng-Jia Dai , Shun-Cheng Yang
IPC分类号： H01L29/778 , H01L29/205 , H01L29/66 , H01L29/207 , H01L29/10 , H01L29/78
摘要： A semiconductor device includes a substrate, a channel layer, an active layer, and a gate electrode. The channel layer has a fin portion over the substrate. The active layer is over at least the fin portion of the channel layer. The active layer is configured to cause a two-dimensional electron gas (2DEG) to be formed in the channel layer along an interface between the channel layer and the active layer. The gate electrode is in contact with a sidewall of the fin portion of the channel layer.
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