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    RETENTION-VALUE ASSOCITED MEMORY
    1.
    发明申请
    RETENTION-VALUE ASSOCITED MEMORY 有权
    保留价值相关记忆

    公开(公告)号：US20120272039A1

    公开(公告)日：2012-10-25

    申请号：US13092911

    申请日：2011-04-23

    申请人： Naveen Muralimanohar ,  Jichuan Chang ,  Parthasarathy Ranganathan

    发明人： Naveen Muralimanohar ,  Jichuan Chang ,  Parthasarathy Ranganathan

    IPC分类号： G06F12/06

    CPC分类号： G06F12/0292 ,  G06F12/0638 ,  Y02D10/13

    摘要： A memory component or subsystem is provided. The memory comprises one or more memory devices and one or more write controllers within each of the one or more memory devices that each controls memory-device components to write input data values into a plurality of memory cells within a memory device that represents a unit of stored data addressed by a logical-address-space address, the write controller applying a current to the plurality of memory cells during a WRITE operation with a magnitude that corresponds to a retention value associated with the logical-address-space address.

    摘要翻译： 提供存储器组件或子系统。 存储器包括一个或多个存储器设备和一个或多个存储器设备内的每一个中的一个或多个写入控制器，每个存储器设备各自控制存储器设备组件以将输入数据值写入到存储器设备内的多个存储器单元中， 由逻辑地址空间地址寻址的存储的数据，所述写入控制器在写入操作期间以对应于与所述逻辑地址空间地址相关联的保留值的大小施加电流到所述多个存储器单元。

    Remapping data with pointer
    2.
    发明申请
    Remapping data with pointer 有权
    用指针重新映射数据

    公开(公告)号：US20120278651A1

    公开(公告)日：2012-11-01

    申请号：US13066976

    申请日：2011-04-28

    申请人： Naveen Muralimanohar ,  Doe Hyun Yoon ,  Jichuan Chang ,  Parthasarathy Ranganathan ,  Norman Paul Jouppi

    发明人： Naveen Muralimanohar ,  Doe Hyun Yoon ,  Jichuan Chang ,  Parthasarathy Ranganathan ,  Norman Paul Jouppi

    IPC分类号： G06F11/20

    CPC分类号： G06F11/20 ,  G11C29/76

    摘要： Embodiments herein relate to a method for remapping data. In an embodiment, it is determined if a first memory block is faulty. A pointer is stored to the first memory block and a pointer flag of the first memory block is set when the first memory block is faulty. Data previously stored at the first memory block is written to a second memory block, where the pointer points to a location of the second memory block.

    摘要翻译： 本文的实施例涉及用于重新映射数据的方法。 在一个实施例中，确定第一存储器块是否有故障。 指针被存储到第一存储器块，并且当第一存储器块发生故障时，设置第一存储器块的指针标志。 先前存储在第一存储器块的数据被写入第二存储器块，其中指针指向第二存储器块的位置。

    RANDOM-ACCESS MEMORY WITH DYNAMICALLY ADJUSTABLE ENDURANCE AND RETENTION
    3.
    发明申请
    RANDOM-ACCESS MEMORY WITH DYNAMICALLY ADJUSTABLE ENDURANCE AND RETENTION 有权
    具有动态可调节的持久性和持续性的随机存取记忆

    公开(公告)号：US20120268983A1

    公开(公告)日：2012-10-25

    申请号：US13092789

    申请日：2011-04-22

    申请人： Naveen Muralimanohar ,  Jichuan Chang ,  Parthasarathy Ranganathan

    发明人： Naveen Muralimanohar ,  Jichuan Chang ,  Parthasarathy Ranganathan

    IPC分类号： G11C11/00

    CPC分类号： G11C29/028 ,  G11C13/0004 ,  G11C13/0035 ,  G11C13/0061 ,  G11C13/0069 ,  G11C29/021 ,  G11C29/50016 ,  G11C2013/0078

    摘要： A memory device is provided. The memory device comprises an array of memory cells, each including a volume of material that can stably exhibit at least two different physical states that are each associated with a different data value, word lines that each interconnects a row of memory cells within the array of memory cells to a word-line driver, and bit lines that each interconnects a column of memory cells, through a bit-line driver, to a write driver that is controlled, during a WRITE operation, to write an input data value to an activated memory cell at the intersection of the column of memory cells and an activated row of memory cells by generating a current density within the memory cells that corresponds to retention/endurance characteristics of the memory cell dynamically assigned to the memory cell by a memory controller, operating system, or other control functionality.

    摘要翻译： 提供存储器件。 存储器件包括存储器单元阵列，每个存储器单元包括能够稳定地呈现与不同数据值相关联的至少两种不同物理状态的材料体积，每条相互连接在该阵列内的一行存储器单元的字线 存储器单元到字线驱动器，以及位线，其每一个通过位线驱动器将存储器单元的列互连到在写操作期间被控制的写驱动器，以将输入数据值写入激活的 通过在存储器单元内产生对应于由存储器控制器动态地分配给存储器单元的存储器单元的保持/耐久特性的电流密度，在存储器单元列和激活的存储器单元行的交点处存储单元，操作 系统或其他控制功能。

    CONTROLLING NANOSTORE OPERATION BASED ON MONITORED PERFORMANCE
    5.
    发明申请
    CONTROLLING NANOSTORE OPERATION BASED ON MONITORED PERFORMANCE 有权
    基于监控性能控制纳斯达克运算

    公开(公告)号：US20120278650A1

    公开(公告)日：2012-11-01

    申请号：US13098172

    申请日：2011-04-29

    申请人： Naveen Muralimanohar ,  Parthasarathy Ranganathan ,  Jichuan Chang

    发明人： Naveen Muralimanohar ,  Parthasarathy Ranganathan ,  Jichuan Chang

    IPC分类号： G06F11/20 ,  B82Y10/00

    CPC分类号： G06F11/004 ,  G06F11/0757 ,  G06F11/1658 ,  G06F11/2038 ,  G06F11/34

    摘要： Methods, apparatus and articles of manufacture for controlling nanostore operation based on monitored performance are disclosed. An example method disclosed herein comprises monitoring performance of a nanostore, the nanostore including compute logic and a datastore accessible via the compute logic, and controlling operation of the nanostore in response to detecting a performance indicator associated with wearout of the compute logic to permit the compute logic to continue to access the datastore.

    摘要翻译： 公开了基于监测性能控制纳米级操作的方法，装置和制造方法。 本文公开的一个示例性方法包括监测纳斯纳多纳斯纳的性能，纳斯纳多包括计算逻辑和经由计算逻辑可访问的数据存储，以及响应于检测与计算逻辑的损耗相关联的性能指标来控制纳斯塔的操作，以允许计算 继续访问数据存储的逻辑。

    ADAPTIVE MEMORY SYSTEM
    6.
    发明申请
    ADAPTIVE MEMORY SYSTEM 审中-公开
    自适应存储系统

    公开(公告)号：US20120272036A1

    公开(公告)日：2012-10-25

    申请号：US13092912

    申请日：2011-04-23

    申请人： Naveen Muralimanohar ,  Jichuan Chang ,  Parthasarathy Ranganathan ,  Doe Hyun Yoon ,  Norman Paul Jouppi

    发明人： Naveen Muralimanohar ,  Jichuan Chang ,  Parthasarathy Ranganathan ,  Doe Hyun Yoon ,  Norman Paul Jouppi

    IPC分类号： G06F12/06

    CPC分类号： G06F12/0238 ,  G06F12/06 ,  G06F2212/7202 ,  G06F2212/7208 ,  Y02D10/13

    摘要： An adaptive, memory system is provided. The adaptive memory system has a number of physical-memory devices and a memory controller that creates and maintains a logical address space to which the physical-memory devices and data-storage allocations are mapped, and through which mapping the memory controller matches static, dynamic, and dynamically-adjustable retention and resiliency characteristics of portions of the physical-memory devices with specified retention and resiliency characteristics specified for the data-storage allocations.

    摘要翻译： 提供了一种自适应的存储系统。 自适应存储器系统具有多个物理存储器设备和存储器控制器，其创建并维护物理存储器件和数据存储器分配映射到的逻辑地址空间，并且存储器控制器通过映射将静态，动态 ，以及具有为数据存储分配指定的指定保留和弹性特性的物理存储器件的部分动态可调保留和弹性特性。

    Controlling nanostore operation based on monitored performance
    9.
    发明授权
    Controlling nanostore operation based on monitored performance 有权
    基于监控的性能控制纳秒操作

    公开(公告)号：US08661298B2

    公开(公告)日：2014-02-25

    申请号：US13098172

    申请日：2011-04-29

    申请人： Naveen Muralimanohar ,  Parthasarathy Ranganathan ,  Jichuan Chang

    发明人： Naveen Muralimanohar ,  Parthasarathy Ranganathan ,  Jichuan Chang

    IPC分类号： G06F11/00

    CPC分类号： G06F11/004 ,  G06F11/0757 ,  G06F11/1658 ,  G06F11/2038 ,  G06F11/34

    摘要： Methods, apparatus and articles of manufacture for controlling nanostore operation based on monitored performance are disclosed. An example method disclosed herein comprises monitoring performance of a nanostore, the nanostore including compute logic and a datastore accessible via the compute logic, and controlling operation of the nanostore in response to detecting a performance indicator associated with wearout of the compute logic to permit the compute logic to continue to access the datastore.

    摘要翻译： 公开了基于监测性能控制纳米级操作的方法，装置和制造方法。 本文公开的一个示例性方法包括监测纳斯纳多纳斯纳的性能，纳斯纳多包括计算逻辑和经由计算逻辑可访问的数据存储，以及响应于检测与计算逻辑的损耗相关联的性能指标来控制纳斯塔的操作，以允许计算 继续访问数据存储的逻辑。