公开(公告)号：US06410417B1

公开(公告)日：2002-06-25

申请号：US09186757

申请日：1998-11-05

申请人： Nien-Yu Tsai ,  Hong-Long Chang ,  Chun-Wei Chen ,  Ming-Li Kung

发明人： Nien-Yu Tsai ,  Hong-Long Chang ,  Chun-Wei Chen ,  Ming-Li Kung

IPC分类号： H01L214763

CPC分类号： H01L21/31138

摘要： A method of forming a metal interconnect structure and via plugs over a dielectric layer having a plurality of vias formed therein is disclosed. The method comprises the steps of: forming tungsten via plugs in the plurality of vias; depositing a metal layer over the dielectric layer and the plurality of tungsten via plugs; patterning and etching the metal layer using a photoresist layer to form the metal interconnect structure; removing the photoresist layer in an asher using a combination of oxygen plasma and water vapor, the ratio of oxygen plasma and water vapor being less than one; and performing a wet strip on the metal interconnect structure.

摘要翻译： 公开了一种在其上形成有多个通孔的电介质层上形成金属互连结构和通孔塞的方法。 该方法包括以下步骤：通过多个通孔中的插塞形成钨; 在所述电介质层和所述多个钨通过插塞上沉积金属层; 使用光致抗蚀剂层图案化和蚀刻金属层以形成金属互连结构; 使用氧等离子体和水蒸气的组合去除灰浆中的光致抗蚀剂层，氧等离子体和水蒸汽的比例小于1; 并在金属互连结构上执行湿条。

公开(公告)号：US6143653A

公开(公告)日：2000-11-07

申请号：US186303

申请日：1998-10-04

申请人： Nien-Yu Tsai ,  Hong-Long Chang ,  Chun-Wei Chen ,  Ming-Li Kung

发明人： Nien-Yu Tsai ,  Hong-Long Chang ,  Chun-Wei Chen ,  Ming-Li Kung

IPC分类号： H01L21/311 ,  H01L21/768 ,  H01L21/44

CPC分类号： H01L21/31133 ,  H01L21/76888

摘要： A method of forming a metal interconnect structure and via plugs over a dielectric layer having a plurality of vias formed therein is disclosed. The method comprises the steps of: forming tungsten via plugs in the plurality of vias; depositing a metal layer over the dielectric layer and the plurality of tungsten via plugs; patterning and etching the metal layer using a photoresist layer to form the metal interconnect structure; oxidizing the metal interconnect structure and the tungsten via plugs to form a metal oxide layer over the metal interconnect structure and tungsten via plugs; and performing a wet strip on the metal interconnect structure.

摘要翻译： 公开了一种在其上形成有多个通孔的电介质层上形成金属互连结构和通孔塞的方法。 该方法包括以下步骤：通过多个通孔中的插塞形成钨; 在所述电介质层和所述多个钨通过插塞上沉积金属层; 使用光致抗蚀剂层图案化和蚀刻金属层以形成金属互连结构; 通过插塞氧化金属互连结构和钨，以在金属互连结构和钨通孔上形成金属氧化物层; 并在金属互连结构上执行湿条。

公开(公告)号：US06526996B1

公开(公告)日：2003-03-04

申请号：US09591848

申请日：2000-06-12

申请人： Hong-Long Chang ,  Ming-Li Kung ,  Hungyueh Lu ,  Fang-Fei Liu

发明人： Hong-Long Chang ,  Ming-Li Kung ,  Hungyueh Lu ,  Fang-Fei Liu

IPC分类号： C25F500

CPC分类号： H01L21/02071 ,  H01L21/32136 ,  Y10S134/902 ,  Y10S438/906

摘要： A dry cleaning method for use in semiconductor fabrication, including the following steps. An etched metallization structure is provided and placed in a processing chamber. The etched metallization structure is cleaned by introducing a fluorine containing gas/oxygen containing gas mixture into the processing chamber proximate the etched metallization structure without the use of a downstream microwave while applying a magnetic field proximate the etched metallization structure and maintaining a pressure of less than about 50 millitorr within the processing chamber for a predetermined time.

公开(公告)号：US6123865A

公开(公告)日：2000-09-26

申请号：US206642

申请日：1998-12-07

申请人： Wei-Chih Lin ,  Ming-Sheng Kao ,  Ming-Li Kung ,  Chih-Ming Lin

发明人： Wei-Chih Lin ,  Ming-Sheng Kao ,  Ming-Li Kung ,  Chih-Ming Lin

IPC分类号： H01L21/311 ,  H01L21/3213 ,  H01L21/302

CPC分类号： H01L21/31111 ,  H01L21/32134

摘要： A method for improving etch uniformity during a wet etching process is disclosed. The method comprises the steps of first rinsing the wafer to form a water film over the wafer surface, followed by liquid phase etching. The water film helps the subsequent viscous etchant to be spread across the wafer surface more uniformly to thereby improve the etch uniformity.

摘要翻译： 公开了一种在湿蚀刻工艺中改善蚀刻均匀性的方法。 该方法包括以下步骤：首先冲洗晶片以在晶片表面上形成水膜，然后进行液相蚀刻。 水膜有助于随后的粘性蚀刻剂更均匀地分布在晶片表面上，从而提高蚀刻均匀性。