-
公开(公告)号：US07095116B1
公开(公告)日：2006-08-22
申请号：US10726042
申请日：2003-12-01
IPC分类号： H01L21/44
CPC分类号： H01L24/05 , H01L24/12 , H01L2224/0401 , H01L2224/05082 , H01L2224/05558 , H01L2224/05624 , H01L2224/13023 , H01L2224/131 , H01L2924/00013 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01049 , H01L2924/0105 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/05042 , H01L2924/10329 , H01L2924/14 , H01L2924/00014 , H01L2224/13099 , H01L2924/00
摘要： An apparatus and method for providing aluminum free under bump metallization stacks in an integrated circuit device is disclosed. Included is the use of vias having substantially non-vertical sidewalls that are formed in a resilient layer, such as benzocyclobutene. In general, semiconductor wafers having a plurality of dice are created, with each die having a plurality of contact pads that are formed on the active surface of the wafer. One or more passivation layers are formed on the active surface and etched appropriately to form vias coupled to the contact pads. At least one resilient layer is then disposed atop the top passivation layer and etched appropriately to form vias aligned with and smaller than the passivation layer vias, such that at least part of the contact pads but no part of the passivation layer is exposed. A plurality of UBM stacks are then formed atop the exposed contact pads and resilient layer, with each UBM stack having a plurality of layers, none of which are aluminum layers. Solder bumps are then formed atop each UBM stack.
摘要翻译： 公开了一种用于在集成电路装置中提供无铝凸块金属化叠层的装置和方法。 包括使用具有形成在弹性层中的基本上非垂直侧壁的通孔，例如苯并环丁烯。 通常，产生具有多个骰子的半导体晶片，每个管芯具有形成在晶片的有效表面上的多个接触焊盘。 一个或多个钝化层形成在有源表面上并被适当地蚀刻以形成耦合到接触焊盘的通孔。 然后将至少一个弹性层设置在顶部钝化层顶部并适当地蚀刻以形成与钝化层通孔对准并且小于钝化层通孔的通孔，使得暴露出至少部分接触焊盘但不包括钝化层的一部分。 然后，多个UBM堆叠形成在暴露的接触焊盘和弹性层的顶部，每个UBM堆叠具有多个层，其中没有一个是铝层。 然后在每个UBM堆叠顶部形成焊料凸块。
搜索结果
1 条记录 (耗时 0.037 秒)
