利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

4 条记录 (耗时 0.031 秒)

    Protection of charge trapping dielectric flash memory devices from UV-induced charging in BEOL processing
    2.
    发明授权
    Protection of charge trapping dielectric flash memory devices from UV-induced charging in BEOL processing 有权
    保护电荷捕获电介质闪存器件免受BEOL处理中的紫外线引起的充电

    公开(公告)号：US07118967B1

    公开(公告)日：2006-10-10

    申请号：US10368696

    申请日：2003-02-19

    申请人： Minh V. Ngo ,  Ning Cheng ,  Jeff P. Erhardt ,  Clarence B. Ferguson ,  Cyrus Tabery ,  John Caffall ,  Tyagamohan Gottipati ,  Dawn Hopper

    发明人： Minh V. Ngo ,  Ning Cheng ,  Jeff P. Erhardt ,  Clarence B. Ferguson ,  Cyrus Tabery ,  John Caffall ,  Tyagamohan Gottipati ,  Dawn Hopper

    IPC分类号： H01L21/336

    CPC分类号： H01L29/7923 ,  H01L29/66833 ,  Y10S438/954

    摘要： A method of protecting a charge trapping dielectric flash memory cell from UV-induced charging, including fabricating a charge trapping dielectric flash memory cell including a charge trapping dielectric charge storage layer in a semiconductor device; and during processing steps subsequent to formation of the charge trapping dielectric charge storage layer, protecting the charge trapping dielectric flash memory cell from exposure to a level of UV radiation sufficient to deposit a non-erasable charge in the charge trapping dielectric flash memory cell. In one embodiment, the step of protecting is carried out by selecting processes in BEOL fabrication which do not include use, generation or exposure of the semiconductor device to a level of UV radiation sufficient to deposit the non-erasable charge.

    摘要翻译： 一种保护电荷捕获电介质闪存单元免受UV感应充电的方法，包括在半导体器件中制造包括电荷捕获介电电荷存储层的电荷捕获电介质闪存单元; 并且在形成电荷捕获介电电荷存储层之后的处理步骤期间，保护电荷捕获电介质闪速存储器单元暴露于足以在电荷俘获电介质闪存单元中沉积不可擦除电荷的UV辐射水平。 在一个实施例中，保护步骤是通过选择不包括半导体器件的使用，产生或曝光到足以沉积不可擦除电荷的紫外线辐射的水平的BEOL制造中的工艺进行的。