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    Method for producing high-density silicon nitride sintered product
    1.
    发明授权
    Method for producing high-density silicon nitride sintered product 失效
    高密度氮化硅烧结体的制造方法

    公开(公告)号：US4832888A

    公开(公告)日：1989-05-23

    申请号：US87474

    申请日：1987-08-20

    申请人： Nobuhiro Sato ,  Haruyuki Ueno ,  Yuji Katsura ,  Takashi Hamamatu

    发明人： Nobuhiro Sato ,  Haruyuki Ueno ,  Yuji Katsura ,  Takashi Hamamatu

    IPC分类号： C04B35/591

    CPC分类号： C04B35/591

    摘要： A shaped body of silicon nitride enjoying high density, ample shrinkage, and outstanding mechanical strength is produced in a desired pattern by a method of preparing a shaped body comprising Si particles and a compound capable of remaining as SiC or C in the form of film on the surface of the Si particles in a non-oxidative atmosphere at a temperature in the range of 900.degree. to 1,400.degree. C., subjecting the shaped body to sintering and shrinkage of not less than 1% in an atmosphere of inert gas at a temperature exceeding 900.degree. C., and not exceeding the softening point of Si, and subsequently subjecting the resultant sintered shaped body to nitriding in a nitriding atmosphere at a pressure exceeding atmospheric pressure and at a temperature in the range of 1,200.degree. to 1,500.degree. C. In another aspect of the present invention, a method for producing a silicon nitride sintered product entails preparing a molded body by adding, to powdery silicon grains, a compound that decomposes under heating to produce H.sub.2 or hydrocarbon compounds such as CH.sub.4 and C.sub.2 H.sub.6 in a temperature range from 500.degree. C. to 1200.degree. C., subjecting the molded body to a heat treatment in a gas atmosphere of a nitriding gas and/or an inert gas, and then chemically converting silicon into silicon nitride in a nitriding gas at a temperature higher than 1200.degree. C.

    摘要翻译： 通过制备包含Si颗粒和能够以膜形式保留为SiC或C的化合物的成型体的方法，以期望的图案产生具有高密度，充分收缩和优异机械强度的氮化硅成形体， 在非氧化性气氛中在900〜1400℃的温度范围内的Si粒子的表面，在惰性气体气氛中，在成形体的温度下对成形体进行不低于1％的烧结收缩 超过900℃，不超过Si的软化点，随后将所得烧结体在氮气气氛中在超过大气压和1200〜1500℃的温度下进行氮化。 在本发明的另一方面，一种氮化硅烧结体的制造方法，其特征在于，通过向粉末状的硅粒子添加在h下分解的化合物来制备成型体 在500℃〜1200℃的温度范围内进行生成H2或烃化合物如CH4和C2H6，在氮化气体和/或惰性气体的气体气氛中进行热处理， 然后在氮化气体中在高于1200℃的温度下将硅化学转化为氮化硅。

    Method for bonding ceramics
    5.
    发明授权
    Method for bonding ceramics 失效
    粘结陶瓷的方法

    公开(公告)号：US4832771A

    公开(公告)日：1989-05-23

    申请号：US174194

    申请日：1988-03-28

    申请人： Takashi Hamamatu ,  Nobuhiro Sato ,  Haruyuki Ueno

    发明人： Takashi Hamamatu ,  Nobuhiro Sato ,  Haruyuki Ueno

    IPC分类号： C04B37/00 ,  C04B35/584 ,  C04B35/591 ,  C04B35/64

    CPC分类号： C04B35/591

    摘要： A complex-shaped bonded body of silicon nitride having a high bonding strength of more than 30 kg/mm.sup.2 as flexural strength and continuously homogenous microstructure through the bonded portion can be obtained by the method comprising the following five steps:(a) molding a body from a mixture of silicon powder having a diameter of less than 44 .mu.m and non-oxide ceramics powder having a diameter of less than 44 .mu.m,(b) heating a molded body obtained by step (a) at a temperature of 600 to 1500.degree. C. in a non-oxide atmosphere such as nitrogen or argon gas to sinter said silicon powder and partially convert to silicon nitride retaining 60 to 100 wt. % unreacted silicon powder therein,(c) grinding a surface to be bonded together with other bodies of said presintered body obtained by step (b) to dispose of unreacted silicon thereon,(d) placing a bonding agent containing silicon powder having a diameter of less than 44 .mu.m and polycarboxy silane resin between two bonding surfaces prepared by step (c), pressing together and drying said bonding agent, and(e) sintering the two presintered bodies pressed together in nitrogen atmosphere at a temperature of 1200.degree. to 1500.degree. C. without melting said disposed unreacted silicon.

    摘要翻译： 通过包括以下五个步骤的方法可以获得具有大于30kg / mm 2的高粘合强度的复合形状的粘合体，作为弯曲强度和通过粘合部分的连续均匀的微结构，（a）成型体 从直径小于44μm的硅粉混合物和直径小于44μm的非氧化物陶瓷粉末混合，（b）在600℃的温度下加热由步骤（a）得到的成型体，至 在非氧化物气氛如氮气或氩气中1500℃烧结所述硅粉，并部分转化成保留60至100重量％的氮化硅。 ％未反应的硅粉末，（c）将与步骤（b）获得的所述预烧结体的其它体相结合的表面研磨以在其上处理未反应的硅，（d）将包含直径为 （c）制备的两个粘合面之间的多羧基硅烷树脂，挤压在一起并干燥所述粘合剂，和（e）在氮气气氛中在1200℃至1500℃的温度下烧结两个预烧结体 不熔化所述未反应的硅。