公开(公告)号：US20120058601A1

公开(公告)日：2012-03-08

申请号：US13293298

申请日：2011-11-10

申请人： Nobuyoshi Saito ,  Tomomasa Ueda ,  Shintaro Nakano ,  Shuichi Uchikoga

发明人： Nobuyoshi Saito ,  Tomomasa Ueda ,  Shintaro Nakano ,  Shuichi Uchikoga

IPC分类号： H01L21/34

CPC分类号： H01L27/1225 ,  H01L27/127 ,  H01L27/3244 ,  H01L27/3248 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869 ,  H01L2227/323

摘要： A thin film transistor includes: an insulating layer; a gate electrode provided on the insulating layer; a gate insulating film provided on the gate electrode; a semiconductor layer provided on the gate insulating film, the semiconductor layer being formed of oxide; source and drain electrodes provided on the semiconductor layer; and a channel protecting layer provided between the source and drain electrodes and the semiconductor layer. The source electrode is opposed to one end of the gate electrode. The drain electrode is opposed to another end of the gate electrode. The another end is opposite to the one end. The drain electrode is apart from the source electrode. The channel protecting layer covers at least a part of a side face of a part of the semiconductor layer. The part of the semiconductor layer is not covered with the source and drain electrodes above the gate electrode.

摘要翻译： 薄膜晶体管包括：绝缘层; 设置在所述绝缘层上的栅电极; 设置在栅电极上的栅极绝缘膜; 设置在所述栅极绝缘膜上的半导体层，所述半导体层由氧化物形成; 源电极和漏电极，设置在半导体层上; 以及设置在源电极和漏电极与半导体层之间的沟道保护层。 源电极与栅电极的一端相对。 漏电极与栅电极的另一端相对。 另一端与一端相反。 漏极与源电极分开。 沟道保护层覆盖半导体层的一部分的侧面的至少一部分。 半导体层的一部分不被栅电极上方的源电极和漏电极覆盖。

公开(公告)号：US09209311B2

公开(公告)日：2015-12-08

申请号：US13410892

申请日：2012-03-02

申请人： Tomomasa Ueda ,  Shintaro Nakano ,  Nobuyoshi Saito ,  Yujiro Hara ,  Shuichi Uchikoga

发明人： Tomomasa Ueda ,  Shintaro Nakano ,  Nobuyoshi Saito ,  Yujiro Hara ,  Shuichi Uchikoga

IPC分类号： H01L29/786 ,  B82Y10/00 ,  H01L29/66

CPC分类号： H01L29/7869 ,  B82Y10/00 ,  H01L29/66969

摘要： According to one embodiment, a thin film transistor includes a gate electrode, a semiconductor layer, a gate insulating film, and a source electrode and a drain electrode. The semiconductor layer includes an oxide including at least one of gallium and zinc, and indium. The gate insulating film is provided between the gate electrode and the semiconductor layer. The source electrode and a drain electrode are electrically connected to the semiconductor layer and spaced from each other. The semiconductor layer includes a plurality of fine crystallites dispersed three-dimensionally in the semiconductor layer and has periodicity in arrangement of atoms.

摘要翻译： 根据一个实施例，薄膜晶体管包括栅电极，半导体层，栅极绝缘膜，以及源电极和漏电极。 半导体层包括包含镓和锌中的至少一种的氧化物和铟。 栅极绝缘膜设置在栅电极和半导体层之间。 源电极和漏极电连接到半导体层并彼此间隔开。 半导体层包括在半导体层中三维分散的多个细微晶体，并且具有原子排列的周期性。

公开(公告)号：US20120132909A1

公开(公告)日：2012-05-31

申请号：US13365730

申请日：2012-02-03

申请人： Nobuyoshi Saito ,  Tomomasa Ueda ,  Shintaro Nakano ,  Shuichi Uchikoga

发明人： Nobuyoshi Saito ,  Tomomasa Ueda ,  Shintaro Nakano ,  Shuichi Uchikoga

IPC分类号： H01L33/08

CPC分类号： H01L27/1225 ,  H01L27/127 ,  H01L27/3244 ,  H01L27/3248 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869 ,  H01L2227/323

摘要： A thin film transistor includes: an insulating layer; a gate electrode provided on the insulating layer; a gate insulating film provided on the gate electrode; a semiconductor layer provided on the gate insulating film, the semiconductor layer being formed of oxide; a source electrode and a drain electrode provided on the semiconductor layer; and a channel protecting layer provided between the source and drain electrodes and the semiconductor layer. The source electrode is opposed to one end of the gate electrode. The drain electrode is opposed to another end of the gate electrode. The another end is opposite to the one end. The drain electrode is apart from the source electrode. The channel protecting layer covers at least a part of a side face of a part of the semiconductor layer. The part of the semiconductor layer is not covered with the source electrode and the drain electrode above the gate electrode.

摘要翻译： 薄膜晶体管包括：绝缘层; 设置在所述绝缘层上的栅电极; 设置在栅电极上的栅极绝缘膜; 设置在所述栅极绝缘膜上的半导体层，所述半导体层由氧化物形成; 设置在半导体层上的源电极和漏电极; 以及设置在源电极和漏电极与半导体层之间的沟道保护层。 源电极与栅电极的一端相对。 漏电极与栅电极的另一端相对。 另一端与一端相反。 漏极与源电极分开。 沟道保护层覆盖半导体层的一部分的侧面的至少一部分。 半导体层的一部分没有被栅电极上方的源电极和漏电极覆盖。

公开(公告)号：US08679904B2

公开(公告)日：2014-03-25

申请号：US13293298

申请日：2011-11-10

申请人： Nobuyoshi Saito ,  Tomomasa Ueda ,  Shintaro Nakano ,  Shuichi Uchikoga

发明人： Nobuyoshi Saito ,  Tomomasa Ueda ,  Shintaro Nakano ,  Shuichi Uchikoga

IPC分类号： H01L21/00 ,  H01L21/84

CPC分类号： H01L27/1225 ,  H01L27/127 ,  H01L27/3244 ,  H01L27/3248 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869 ,  H01L2227/323

摘要： A thin film transistor includes: an insulating layer; a gate electrode provided on the insulating layer; a gate insulating film provided on the gate electrode; a semiconductor layer provided on the gate insulating film, the semiconductor layer being formed of oxide; source and drain electrodes provided on the semiconductor layer; and a channel protecting layer provided between the source and drain electrodes and the semiconductor layer. The source electrode is opposed to one end of the gate electrode. The drain electrode is opposed to another end of the gate electrode. The another end is opposite to the one end. The drain electrode is apart from the source electrode. The channel protecting layer covers at least a part of a side face of a part of the semiconductor layer. The part of the semiconductor layer is not covered with the source and drain electrodes above the gate electrode.

摘要翻译： 薄膜晶体管包括：绝缘层; 设置在所述绝缘层上的栅电极; 设置在栅电极上的栅极绝缘膜; 设置在所述栅极绝缘膜上的半导体层，所述半导体层由氧化物形成; 源电极和漏电极，设置在半导体层上; 以及设置在源电极和漏电极与半导体层之间的沟道保护层。 源电极与栅电极的一端相对。 漏电极与栅电极的另一端相对。 另一端与一端相反。 漏极与源电极分开。 沟道保护层覆盖半导体层的一部分的侧面的至少一部分。 半导体层的一部分不被栅电极上方的源电极和漏电极覆盖。

公开(公告)号：US08525182B2

公开(公告)日：2013-09-03

申请号：US13365730

申请日：2012-02-03

申请人： Nobuyoshi Saito ,  Tomomasa Ueda ,  Shintaro Nakano ,  Shuichi Uchikoga

发明人： Nobuyoshi Saito ,  Tomomasa Ueda ,  Shintaro Nakano ,  Shuichi Uchikoga

IPC分类号： H01L27/14

CPC分类号： H01L27/1225 ,  H01L27/127 ,  H01L27/3244 ,  H01L27/3248 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869 ,  H01L2227/323

摘要： A thin film transistor includes: an insulating layer; a gate electrode provided on the insulating layer; a gate insulating film provided on the gate electrode; a semiconductor layer provided on the gate insulating film, the semiconductor layer being formed of oxide; a source electrode and a drain electrode provided on the semiconductor layer; and a channel protecting layer provided between the source and drain electrodes and the semiconductor layer. The source electrode is opposed to one end of the gate electrode. The drain electrode is opposed to another end of the gate electrode. The another end is opposite to the one end. The drain electrode is apart from the source electrode. The channel protecting layer covers at least a part of a side face of a part of the semiconductor layer. The part of the semiconductor layer is not covered with the source electrode and the drain electrode above the gate electrode.

摘要翻译： 薄膜晶体管包括：绝缘层; 设置在所述绝缘层上的栅电极; 设置在栅电极上的栅极绝缘膜; 设置在所述栅极绝缘膜上的半导体层，所述半导体层由氧化物形成; 设置在半导体层上的源电极和漏电极; 以及设置在源电极和漏电极与半导体层之间的沟道保护层。 源电极与栅电极的一端相对。 漏电极与栅电极的另一端相对。 另一端与一端相反。 漏极与源电极分开。 沟道保护层覆盖半导体层的一部分的侧面的至少一部分。 半导体层的一部分没有被栅电极上方的源电极和漏电极覆盖。

公开(公告)号：US20120211745A1

公开(公告)日：2012-08-23

申请号：US13410892

申请日：2012-03-02

申请人： Tomomasa Ueda ,  Shintaro Nakano ,  Nobuyoshi Saito ,  Yujiro Hara ,  Shuichi Uchikoga

发明人： Tomomasa Ueda ,  Shintaro Nakano ,  Nobuyoshi Saito ,  Yujiro Hara ,  Shuichi Uchikoga

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/7869 ,  B82Y10/00 ,  H01L29/66969

摘要： According to one embodiment, a thin film transistor includes a gate electrode, a semiconductor layer, a gate insulating film, and a source electrode and a drain electrode. The semiconductor layer includes an oxide including at least one of gallium and zinc, and indium. The gate insulating film is provided between the gate electrode and the semiconductor layer. The source electrode and a drain electrode are electrically connected to the semiconductor layer and spaced from each other. The semiconductor layer includes a plurality of fine crystallites dispersed three-dimensionally in the semiconductor layer and has periodicity in arrangement of atoms.

摘要翻译： 根据一个实施例，薄膜晶体管包括栅电极，半导体层，栅极绝缘膜，以及源电极和漏电极。 半导体层包括包含镓和锌中的至少一种的氧化物和铟。 栅极绝缘膜设置在栅电极和半导体层之间。 源电极和漏极电连接到半导体层并彼此间隔开。 半导体层包括在半导体层中三维分散的多个细微晶体，并且具有原子排列的周期性。

公开(公告)号：US09159836B2

公开(公告)日：2015-10-13

申请号：US13483593

申请日：2012-05-30

申请人： Shintaro Nakano ,  Tomomasa Ueda ,  Kentaro Miura ,  Nobuyoshi Saito ,  Tatsunori Sakano ,  Hajime Yamaguchi

发明人： Shintaro Nakano ,  Tomomasa Ueda ,  Kentaro Miura ,  Nobuyoshi Saito ,  Tatsunori Sakano ,  Hajime Yamaguchi

IPC分类号： H01L29/12 ,  H01L29/786

CPC分类号： H01L29/7869 ,  H01L21/02266 ,  H01L21/02565 ,  H01L27/3244 ,  H01L29/24 ,  H01L29/42364 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/78603 ,  H01L51/0096 ,  H01L2251/5338

摘要： According to one embodiment, a thin film transistor includes a substrate, a gate electrode, a first insulating film, an oxide semiconductor film, a second insulating film, a source electrode, and a drain electrode. The gate electrode is provided on a part of the substrate. The first insulating film covers the gate electrode. The oxide semiconductor film is provided on the gate electrode via the first insulating film. The second insulating film is provided on a part of the oxide semiconductor film. The source and drain electrodes are respectively connected to first and second portions of the oxide semiconductor film not covered with the second insulating film. The oxide semiconductor film includes an oxide semiconductor. Concentrations of hydrogen contained in the first and second insulating films are not less than 5×1020 atm/cm3, and not more than 1019 atm/cm3, respectively.

摘要翻译： 根据一个实施例，薄膜晶体管包括衬底，栅电极，第一绝缘膜，氧化物半导体膜，第二绝缘膜，源电极和漏电极。 栅电极设置在基板的一部分上。 第一绝缘膜覆盖栅电极。 氧化物半导体膜经由第一绝缘膜设置在栅电极上。 第二绝缘膜设置在氧化物半导体膜的一部分上。 源极和漏极分别连接到未被第二绝缘膜覆盖的氧化物半导体膜的第一和第二部分。 氧化物半导体膜包括氧化物半导体。 第一绝缘膜和第二绝缘膜中含有的氢的浓度分别为5×1020atm / cm 3以上1019atm / cm 3以下。

公开(公告)号：US08933444B2

公开(公告)日：2015-01-13

申请号：US13724294

申请日：2012-12-21

申请人： Nobuyoshi Saito ,  Kentaro Miura ,  Shintaro Nakano ,  Tatsunori Sakano ,  Tomomasa Ueda ,  Hajime Yamaguchi

发明人： Nobuyoshi Saito ,  Kentaro Miura ,  Shintaro Nakano ,  Tatsunori Sakano ,  Tomomasa Ueda ,  Hajime Yamaguchi

IPC分类号： H01L51/52 ,  H01L27/32 ,  H01L29/786

CPC分类号： H01L51/5203 ,  H01L27/3262 ,  H01L29/7869

摘要： According to one embodiment, a display device includes a substrate, a thin film transistor, a passivation film, a hydrogen barrier film, a pixel electrode, an organic light emitting layer, an opposite electrode, and a sealing film. The thin film transistor is provided on a major surface of the substrate. The thin film transistor includes a gate electrode, a gate insulating film, a semiconductor film, a first conducting portion, and a second conducting portion. The passivation film is provided on the thin film transistor. The hydrogen barrier film is provided on the passivation film. The pixel electrode is electrically connected to one of the first conducting portion and the second conducting portion. The organic light emitting layer is provided on the pixel electrode. The opposite electrode is provided on the organic light emitting layer. The sealing film is provided on the hydrogen barrier film and the opposite electrode.

摘要翻译： 根据一个实施例，显示装置包括基板，薄膜晶体管，钝化膜，氢阻挡膜，像素电极，有机发光层，相对电极和密封膜。 薄膜晶体管设置在基板的主表面上。 薄膜晶体管包括栅电极，栅极绝缘膜，半导体膜，第一导电部分和第二导电部分。 钝化膜设置在薄膜晶体管上。 氢屏障膜设置在钝化膜上。 像素电极电连接到第一导电部分和第二导电部分中的一个。 有机发光层设置在像素电极上。 相对电极设置在有机发光层上。 密封膜设置在氢阻挡膜和相对电极上。

公开(公告)号：US09184408B2

公开(公告)日：2015-11-10

申请号：US13721925

申请日：2012-12-20

申请人： Nobuyoshi Saito ,  Tomomasa Ueda ,  Hajime Yamaguchi ,  Kentaro Miura ,  Shintaro Nakano ,  Tatsunori Sakano

发明人： Nobuyoshi Saito ,  Tomomasa Ueda ,  Hajime Yamaguchi ,  Kentaro Miura ,  Shintaro Nakano ,  Tatsunori Sakano

IPC分类号： H01L23/00 ,  H01L51/52 ,  H01L27/32

CPC分类号： H01L51/52 ,  H01L27/3227 ,  H01L27/326

摘要： According to one embodiment, a display panel includes a substrate, a switching element, a pixel electrode, an organic light emitting layer, an opposite electrode, a detecting electrode, and an insulating layer. The substrate has a major surface. The switching element is provided on the major surface. The switching element includes a semiconductor layer. The pixel electrode is provided on the major surface. The pixel electrode is electrically connected to the switching element. The organic light emitting layer is provided on the pixel electrode. The opposite electrode is provided on the organic light emitting layer. The detecting electrode is provided between the substrate and at least a part of the pixel electrode. The detecting electrode includes at least one element included in the semiconductor layer. The insulating layer is provided between the pixel electrode and the detecting electrode.

摘要翻译： 根据一个实施例，显示面板包括基板，开关元件，像素电极，有机发光层，相对电极，检测电极和绝缘层。 基板具有主表面。 开关元件设置在主表面上。 开关元件包括半导体层。 像素电极设置在主表面上。 像素电极电连接到开关元件。 有机发光层设置在像素电极上。 相对电极设置在有机发光层上。 检测电极设置在基板和像素电极的至少一部分之间。 检测电极包括包含在半导体层中的至少一个元件。 绝缘层设置在像素电极和检测电极之间。

公开(公告)号：US20130313547A1

公开(公告)日：2013-11-28

申请号：US13729495

申请日：2012-12-28

申请人： Shintaro NAKANO ,  Tomomasa Ueda ,  Kentaro Miura ,  Nobuyoshi Saito ,  Tatsunori Sakano ,  Hajime Yamaguchi

发明人： Shintaro NAKANO ,  Tomomasa Ueda ,  Kentaro Miura ,  Nobuyoshi Saito ,  Tatsunori Sakano ,  Hajime Yamaguchi

IPC分类号： H01L51/52

CPC分类号： H01L51/5203 ,  H01L27/1248 ,  H01L27/3262 ,  H01L51/5253 ,  H01L51/5256

摘要： According to one embodiment, a display device includes a substrate, a thin film transistor, a pixel electrode, an organic light emitting layer, a common electrode, and a sealing unit. The thin film transistor is provided on the substrate. The thin film transistor includes a gate electrode, a gate insulating film, a semiconductor film, a first conducting portion, and a second conducting portion. The pixel electrode is electrically connected to one of the first conducting portion and the second conducting portion. The organic light emitting layer is provided on the pixel electrode. The common electrode is provided on the organic light emitting layer. The sealing unit is provided on the common electrode. The sealing unit includes a first sealing film and a second sealing film. A refractive index of the second sealing film is different from a refractive index of the first sealing film.

摘要翻译： 根据一个实施例，显示装置包括基板，薄膜晶体管，像素电极，有机发光层，公共电极和密封单元。 薄膜晶体管设置在基板上。 薄膜晶体管包括栅电极，栅极绝缘膜，半导体膜，第一导电部分和第二导电部分。 像素电极电连接到第一导电部分和第二导电部分中的一个。 有机发光层设置在像素电极上。 公共电极设置在有机发光层上。 密封单元设置在公共电极上。 密封单元包括第一密封膜和第二密封膜。 第二密封膜的折射率与第一密封膜的折射率不同。