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    Coordinate detecting device and method
    1.
    发明授权
    Coordinate detecting device and method 有权
    坐标检测装置及方法

    公开(公告)号：US07940063B2

    公开(公告)日：2011-05-10

    申请号：US12423845

    申请日：2009-04-15

    申请人： Nobuyoshi Shimizu ,  Koichi Kondoh ,  Shiro Hirota ,  Norio Endo

    发明人： Nobuyoshi Shimizu ,  Koichi Kondoh ,  Shiro Hirota ,  Norio Endo

    IPC分类号： G01R27/08

    CPC分类号： G06F3/045 ,  G06F2203/04104

    摘要： A coordinate detecting device includes a resistive film disposed on a quadrangular substrate; a power source for applying a voltage to the resistive film; four electrodes connected to the power source and disposed in four corners of the resistive film; four switches each disposed between the power source and a corresponding electrode; four ammeters for measuring currents flowing through corresponding electrodes; and a grounded conductive film for detecting coordinates of a contact point on the resistive film when the conductive film is brought in contact with the resistive film. The voltage is applied sequentially to the electrodes by opening and closing the switches. When the conductive film is brought in contact with the resistive film, the ammeters sequentially measure currents flowing through the corresponding electrodes. The coordinates of the contact point are detected based on positions of the electrodes and resistances obtained using the measured currents.

    摘要翻译： 坐标检测装置包括设置在四边形基板上的电阻膜; 用于向电阻膜施加电压的电源; 连接到电源并设置在电阻膜的四个角中的四个电极; 每个开关设置在电源和相应的电极之间; 测量流经相应电极的电流的四个电流表; 以及接地导电膜，用于当导电膜与电阻膜接触时检测电阻膜上的接触点的坐标。 通过打开和关闭开关将电压依次施加到电极。 当导电膜与电阻膜接触时，电流表依次测量流过相应电极的电流。 基于使用测量电流获得的电极的位置和电阻来检测接触点的坐标。

    COORDINATE DETECTING DEVICE AND METHOD
    2.
    发明申请
    COORDINATE DETECTING DEVICE AND METHOD 有权
    协调检测装置和方法

    公开(公告)号：US20090289643A1

    公开(公告)日：2009-11-26

    申请号：US12423845

    申请日：2009-04-15

    申请人： Nobuyoshi Shimizu ,  Koichi Kondoh ,  Shiro Hirota ,  Norio Endo

    发明人： Nobuyoshi Shimizu ,  Koichi Kondoh ,  Shiro Hirota ,  Norio Endo

    IPC分类号： G01R27/08

    CPC分类号： G06F3/045 ,  G06F2203/04104

    摘要： A coordinate detecting device includes a resistive film disposed on a quadrangular substrate; a power source for applying a voltage to the resistive film; four electrodes connected to the power source and disposed in four corners of the resistive film; four switches each disposed between the power source and a corresponding electrode; four ammeters for measuring currents flowing through corresponding electrodes; and a grounded conductive film for detecting coordinates of a contact point on the resistive film when the conductive film is brought in contact with the resistive film. The voltage is applied sequentially to the electrodes by opening and closing the switches. When the conductive film is brought in contact with the resistive film, the ammeters sequentially measure currents flowing through the corresponding electrodes. The coordinates of the contact point are detected based on positions of the electrodes and resistances obtained using the measured currents.

    摘要翻译： 坐标检测装置包括设置在四边形基板上的电阻膜; 用于向电阻膜施加电压的电源; 连接到电源并设置在电阻膜的四个角中的四个电极; 每个开关设置在电源和相应的电极之间; 测量流过相应电极的电流的四个电流表; 以及接地导电膜，用于当导电膜与电阻膜接触时检测电阻膜上的接触点的坐标。 通过打开和关闭开关将电压依次施加到电极。 当导电膜与电阻膜接触时，电流表依次测量流过相应电极的电流。 基于使用测量电流获得的电极的位置和电阻来检测接触点的坐标。

    Touch panel and method of detecting coordinate position
    3.
    发明授权
    Touch panel and method of detecting coordinate position 有权
    触摸面板和检测坐标位置的方法

    公开(公告)号：US09019216B2

    公开(公告)日：2015-04-28

    申请号：US13356775

    申请日：2012-01-24

    申请人： Satoshi Sakurai ,  Nobuyoshi Shimizu ,  Shiro Hirota ,  Norio Endo

    发明人： Satoshi Sakurai ,  Nobuyoshi Shimizu ,  Shiro Hirota ,  Norio Endo

    IPC分类号： G06F3/041 ,  G06F3/044 ,  G06F3/045

    CPC分类号： G06F3/044 ,  G06F3/045 ,  G06F2203/04106

    摘要： Disclosed is a touch panel including an upper conductive layer; a lower conductive layer facing the upper conductive layer with an interval between the upper conductive layer; a capacitive sensing unit that detects a coordinate position by a capacitive coupling under a condition where a predetermined electric potential is applied to the upper conductive layer; and a resistive sensing unit that detects a coordinate position based on an electric potential at a position where the upper conductive layer and the lower conductive layer contact under a condition where a potential gradient is generated on either one of the upper conductive layer and the lower conductive layer.

    摘要翻译： 公开了一种包括上导电层的触摸面板; 面向上导电层的下导电层，在上导电层之间具有间隔; 电容感测单元，其在对上导电层施加预定电位的条件下，通过电容耦合检测坐标位置; 以及电阻感测单元，其基于在上导电层和下导电层在上导电层和下导电层中的任一个上产生电位梯度的条件下接触的位置处的电位检测坐标位置 层。

    TOUCH PANEL AND METHOD OF DETECTING COORDINATE POSITION
    4.
    发明申请
    TOUCH PANEL AND METHOD OF DETECTING COORDINATE POSITION 有权
    触摸板和检测坐标位置的方法

    公开(公告)号：US20130021089A1

    公开(公告)日：2013-01-24

    申请号：US13356775

    申请日：2012-01-24

    申请人： Satoshi Sakurai ,  Nobuyoshi Shimizu ,  Shiro Hirota ,  Norio Endo

    发明人： Satoshi Sakurai ,  Nobuyoshi Shimizu ,  Shiro Hirota ,  Norio Endo

    IPC分类号： H03K17/975

    CPC分类号： G06F3/044 ,  G06F3/045 ,  G06F2203/04106

    摘要： Disclosed is a touch panel including an upper conductive layer; a lower conductive layer facing the upper conductive layer with an interval between the upper conductive layer; a capacitive sensing unit that detects a coordinate position by a capacitive coupling under a condition where a predetermined electric potential is applied to the upper conductive layer; and a resistive sensing unit that detects a coordinate position based on an electric potential at a position where the upper conductive layer and the lower conductive layer contact under a condition where a potential gradient is generated on either one of the upper conductive layer and the lower conductive layer.

    摘要翻译： 公开了一种包括上导电层的触摸面板; 面向上导电层的下导电层，在上导电层之间具有间隔; 电容感测单元，其在对上导电层施加预定电位的条件下，通过电容耦合检测坐标位置; 以及电阻感测单元，其基于在上导电层和下导电层在上导电层和下导电层中的任一个上产生电位梯度的条件下接触的位置处的电位检测坐标位置 层。

    Method for fabricating thin film transistor matrix device
    7.
    发明授权
    Method for fabricating thin film transistor matrix device 失效
    制造薄膜晶体管矩阵器件的方法

    公开(公告)号：US5580796A

    公开(公告)日：1996-12-03

    申请号：US470057

    申请日：1995-06-06

    申请人： Hideaki Takizawa ,  Yasuhiro Nasu ,  Kazuhiro Watanabe ,  Shiro Hirota ,  Kazuo Nonaka ,  Seii Sato ,  Teiji Majima

    发明人： Hideaki Takizawa ,  Yasuhiro Nasu ,  Kazuhiro Watanabe ,  Shiro Hirota ,  Kazuo Nonaka ,  Seii Sato ,  Teiji Majima

    IPC分类号： G02F1/136 ,  G02F1/13 ,  G02F1/1333 ,  G02F1/1345 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/336 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786 ,  H01L21/84

    CPC分类号： G02F1/13458 ,  G02F1/136213 ,  H01L27/12 ,  G02F1/1345 ,  G02F1/13452 ,  G02F2001/133357

    摘要： A thin film transistor matrix device comprises a transparent insulating substrate, a thin film transistor unit, a picture element unit, a storage capacitance unit, a gate terminal unit, and a drain terminal unit, the storage capacitance unit including a storage capacitance electrode formed on the transparent insulating substrate and formed of a metal layer of the same material as the gate electrode; a dielectric film formed on the storage capacitance electrode and formed of an insulating film common with the gate insulating film and a non-doped semiconductor layer of the same material as the semiconductor active layer; and a counter electrode formed on the dielectric film and formed of a doped semiconductor layer of the same material as the semiconductor contact layer and a metal layer of the same material as the source electrode and the drain electrode, the counter electrode being connected to the picture element electrode through a contact hole opened in a protecting film common with the passivation film. Thus, the fabrication process of the TFT matrix device can be simplified, and lower costs can be realized. Characteristic changes of the storage capacitance can be prevented, and yields and reliability can be improved.

    摘要翻译： 一种薄膜晶体管矩阵器件，包括透明绝缘衬底，薄膜晶体管单元，像素单元，存储电容单元，栅极端子单元和漏极端子单元，所述存储电容单元包括形成在 透明绝缘基板，由与栅电极相同材料的金属层形成; 形成在所述辅助电容电极上并由与所述栅极绝缘膜共用的绝缘膜和与所述半导体有源层相同材料的非掺杂半导体层形成的电介质膜; 以及形成在电介质膜上并由与半导体接触层相同材料的掺杂半导体层和与源电极和漏电极相同材料的金属层形成的对电极，对电极连接到图像 元件电极通过在与钝化膜共同的保护膜中打开的接触孔。 因此，可以简化TFT矩阵器件的制造工艺，并且可以实现更低的成本。 可以防止存储电容的特性变化，并且可以提高产量和可靠性。

    Substrate for display, method of manufacturing the same and display having the same
    9.
    发明授权
    Substrate for display, method of manufacturing the same and display having the same 有权
    用于显示的基板，其制造方法和具有相同的显示器

    公开(公告)号：US07253439B2

    公开(公告)日：2007-08-07

    申请号：US11238547

    申请日：2005-09-29

    申请人： Katsunori Misaki ,  Shiro Hirota

    发明人： Katsunori Misaki ,  Shiro Hirota

    IPC分类号： H01L29/04 ,  H01L29/15

    CPC分类号： H01L29/41733 ,  H01L27/12 ,  H01L29/458 ,  H01L29/786

    摘要： The invention relates to a substrate for a display, a method of manufacturing the same, and a display having the same and provides a substrate for a display which can be manufactured through simple steps with high reliability, a method of manufacturing the same, and a display having the same. The substrate is configured to have a gate bus line, an OC layer formed on the gate bus line, a pixel electrode formed on the OC layer at each pixel region, and a gate terminal for electrically connecting an external circuit and the gate bus line. The gate terminal includes a gate terminal bottom electrode which has an Al type metal layer having a first end face and a high melting point metal layer formed on the Al type metal layer and having a second end face located outwardly from the first end face and which is electrically connected to the gate bus line and a gate terminal top electrode which is formed of the same material as that of the pixel electrode on the gate terminal bottom electrode and which is electrically connected to the gate terminal bottom electrode without contacting the first end face.

    摘要翻译： 本发明涉及一种显示器用基板及其制造方法及具有该显示器的显示器，提供了一种显示器用基板，其可以通过具有高可靠性的简单步骤制造，其制造方法及其制造方法 显示具有相同的。 衬底被配置为具有栅极总线，形成在栅极总线上的OC层，在每个像素区域上形成在OC层上的像素电极，以及用于电连接外部电路和栅极总线的栅极端子。 栅极端子包括栅极端子底电极，该栅极端子底电极具有形成在Al型金属层上的第一端面和高熔点金属层的Al型金属层，并且具有从第一端面向外定位的第二端面， 电连接到栅极总线和栅极端子顶部电极，栅极端子顶部电极由与栅极端子底部电极上的像素电极相同的材料形成并且与栅极端子底部电极电连接而不与第一端面接触 。

    Thin film transistor matrix device
    10.
    发明授权
    Thin film transistor matrix device 失效
    薄膜晶体管矩阵器件

    公开(公告)号：US5483082A

    公开(公告)日：1996-01-09

    申请号：US174030

    申请日：1993-12-28

    申请人： Hideaki Takizawa ,  Yasuhiro Nasu ,  Kazuhiro Watanabe ,  Shiro Hirota ,  Kazuo Nonaka ,  Seii Sato ,  Teiji Majima

    发明人： Hideaki Takizawa ,  Yasuhiro Nasu ,  Kazuhiro Watanabe ,  Shiro Hirota ,  Kazuo Nonaka ,  Seii Sato ,  Teiji Majima

    IPC分类号： G02F1/136 ,  G02F1/13 ,  G02F1/1333 ,  G02F1/1345 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/336 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786

    CPC分类号： G02F1/13458 ,  G02F1/136213 ,  H01L27/12 ,  G02F1/1345 ,  G02F1/13452 ,  G02F2001/133357

    摘要： A thin film transistor matrix device comprises a transparent insulating substrate, a thin film transistor unit, a picture element unit, a storage capacitance unit, a gate terminal unit, and a drain terminal unit, the storage capacitance unit including a storage capacitance electrode formed on the transparent insulating substrate and formed of a metal layer of the same material as the gate electrode; a dielectric film formed on the storage capacitance electrode and formed of an insulating film common with the gate insulating film and a non-doped semiconductor layer of the same material as the semiconductor active layer; and a counter electrode formed on the dielectric film and formed of a doped semiconductor layer of the same material as the semiconductor contact layer and a metal layer of the same material as the source electrode and the drain electrode, the counter electrode being connected to the picture element electrode through a contact hole opened in a protecting film common with the passivation film. Thus, the fabrication process of the TFT matrix device can be simplified, and lower costs can be realized. Characteristic changes of the storage capacitance can be prevented, and yields and reliability can be improved.

    摘要翻译： 一种薄膜晶体管矩阵器件，包括透明绝缘衬底，薄膜晶体管单元，像素单元，存储电容单元，栅极端子单元和漏极端子单元，所述存储电容单元包括形成在 透明绝缘基板，由与栅电极相同材料的金属层形成; 形成在所述辅助电容电极上并由与所述栅极绝缘膜共用的绝缘膜和与所述半导体有源层相同材料的非掺杂半导体层形成的电介质膜; 以及形成在电介质膜上并由与半导体接触层相同材料的掺杂半导体层和与源电极和漏电极相同材料的金属层形成的对电极，对电极连接到图像 元件电极通过在与钝化膜共同的保护膜中打开的接触孔。 因此，可以简化TFT矩阵器件的制造工艺，并且可以实现更低的成本。 可以防止存储电容的特性变化，并且可以提高产量和可靠性。