摘要:
A plurality of pump modules are provided, the number of pump modules to be activated is changed depending on a mode of operation, and the number of pump modules to be activated is also adjusted with the specification of interest taken into consideration. There can be provided an internal voltage generation circuit occupying a small area and readily capable of accommodating a change in specification.
摘要:
A semiconductor device includes a constant voltage generation circuit generating a constant voltage commonly to reference voltages corresponding to a plurality of internal voltages. The plurality of reference voltages are generated from the common constant voltage. Thus, the semiconductor device for generating internal voltages is implemented, which allows reduction in layout area and decrease in test time for voltage adjustment.
摘要:
Oscillation outputs which are different for respective detector signals output from a first detector circuit and a second detector circuit, are obtained from a first ring oscillator and a second ring oscillator respectively corresponding to the detector circuits. A selector selects and outputs one of the oscillation outputs. Accordingly, it is sufficient to provide only one pump circuit in a circuit producing a substrate bias voltage.
摘要:
With power-on detection circuits provided for a plurality of power supply voltages, a main power-on detection signal is maintained at the active state to reset an internal node while at least one of the power-on detection signals is active. In a multi-power semiconductor integrated circuit device, current consumption at the time of power-up is reduced.
摘要:
In a VDC circuit, a differential amplifier compares a first reference potential with an internal supply potential to generate a control signal according to a result of the comparison. A constant current source transistor receives at its gate a second reference potential supplied through a path different from that of the first reference potential to operate for controlling an operation current value of the differential amplifier. A drive transistor changes conductance between a node for outputting the internal supply potential and a supply potential according to the control signal.
摘要:
A semiconductor integrated circuit device includes a reference voltage generating circuit that can be tuned without a circuit replacement when a process condition is varied. The reference voltage generating circuit is constituted such that two different circuit configurations having different temperature properties are switched by a first switch. In each of the circuit configurations, a switch control circuit in which tuning can be performed by switching a second switch generates a control signal based on a test mode and supplies the signal to the first switch for tuning. Thereafter, a fuse in the switch control circuit is blown off to generate a control signal, and reference voltage Vref is output.
摘要:
In a control voltage generating section for supplying a control voltage to a gate of a charge transfer gate for transferring charges received from a capacitor to an output node to generate an internal voltage, the amplitude of the control voltage is switched in accordance with a switch signal. An internal voltage generating circuit making it possible to improve design efficiency, reliability and yield and reduce power consumption is provided.
摘要:
A control circuit portion which controls the operations of memory cells is concentrated in a central portion and heat radiation plates are placed thereon via adhesive. A semiconductor integrated circuit having a function of the MPU or the like is placed above the control circuit portion via a bump electrode. The control circuit portion and a memory block are formed on separate chips respectively.
摘要:
A power supply circuit and an oscillation circuit or the like of noise generation sources are concentrated, and the periphery thereof is surrounded by a guard ring. Guard ring is provided to have bonding pads at least partially thereon. Guard ring is effectively provided utilizing the region below bonding pads, so that effective noise reduction is achieved while preventing increase in chip area.
摘要:
When a tuning mode signal VTUNE is activated, control clock signal TCLK is output, and counter counts up tuning signals TSIG1 to TSIG4. Tuning circuits render conductive the terminals of respective transistors, and reference potential Vref lowers in accordance with the reduction in the resistance value. When reference potential Vref attains equal to the external reference potential Ext.Vref, differential amplifier circuit stops output of the control clock signal TCLK. In accordance with the plurality of the determined tuning signals TSIG1 to TSIG4, fuse elements inside the tuning circuits are programmed.