公开(公告)号：US5367980A

公开(公告)日：1994-11-29

申请号：US82370

申请日：1993-06-28

申请人： Noriaki Itom ,  Yasuo Nakai ,  Ken Hattori ,  Junichi Kanasaki ,  Akiko Okano

发明人： Noriaki Itom ,  Yasuo Nakai ,  Ken Hattori ,  Junichi Kanasaki ,  Akiko Okano

IPC分类号： H01L21/20 ,  H01L21/203 ,  H01L21/268 ,  H01L21/306 ,  H01L21/66

CPC分类号： H01L21/02521 ,  H01L21/02631 ,  H01L21/30621 ,  Y10S438/974

摘要： A basic sample having a surface is set in an ultrahigh vacuum chamber. Atoms constituting the sample are deposited on the surface of the sample to remove vacancy-type defects. A laser beam having a predetermined wavelength and a predetermined fluence is radiated on the sample to remove adatom-type and kink-type defects, thereby producing a defect-free surface. In addition, the same material as that for a basic sample is deposited on a defect-free surface to produce a defect-free thin film.

摘要翻译： 具有表面的基本样品设置在超高真空室中。 构成样品的原子沉积在样品的表面以去除空位缺陷。 将具有预定波长和预定注量的激光束照射在样品上以除去原子型和扭结型缺陷，从而产生无缺陷表面。 此外，将与基本样品相同的材料沉积在无缺陷表面上以产生无缺陷的薄膜。

公开(公告)号：US5389786A

公开(公告)日：1995-02-14

申请号：US46758

申请日：1993-04-15

申请人： Noriaki Itoh ,  Yasuo Nakai ,  Ken Hattori ,  Akiko Okano

发明人： Noriaki Itoh ,  Yasuo Nakai ,  Ken Hattori ,  Akiko Okano

IPC分类号： G01N23/225 ,  G01N21/63 ,  G01N21/71 ,  G01N23/22 ,  G01N27/64 ,  G01Q30/18 ,  G01N21/00

CPC分类号： G01N21/718

摘要： The ablation threshold of a laser fluence with respect to the surface of a sample manufactured in a high vacuum chamber is determined by using the sample. The quantity of vacancy-type defects is determined by radiating a laser beam having a fluence slightly higher than the ablation threshold on the surface. At the same time, the quantities of adatom-type and kink-type defects are determined by radiating a pulsed laser beam having a fluence slightly lower than the ablation threshold on the surface repeatedly to obtain the relation between an emission yield and the number of laser pulses. The quantity of the adatom-type defects is obtained by determining the area (total quantity of emitted atoms) of a rapidly decreasing portion of the relation. The quantity of kink-type defects is obtained by determining a magnitude of an emission yield of a slowly decreasing portion of the relation.

摘要翻译： 通过使用样品来确定相对于在高真空室中制造的样品的表面的激光注量的消融阈值。 通过辐射具有略高于表面上的消融阈值的注量的激光束来确定空位型缺陷的量。 同时，通过在表面上辐射略低于表面消融阈值的注量的脉冲激光束来确定吸收原子类型和扭结型缺陷的数量，以获得发射产量与激光数目之间的关系 脉冲。 通过确定关系的快速减少部分的面积（发射原子的总量）来获得吸收原子型缺陷的量。 通过确定关系的缓慢减少部分的发射产量的大小来获得扭结型缺陷的数量。