摘要:
There are provided a radiation detection module, a printed circuit board, and a radiological imaging apparatus which make it possible to enhance spatial resolution without increasing channel number, and thereby to perform high-accuracy diagnosis. The radiation detection module includes a plurality of radiation detectors, and a wiring board on which the plurality of radiation detectors are mounted in a manner of being arranged in at least a radiation traveling direction. Here, on the wiring board, a pair of the radiation detectors which are adjacent to each other in the radiation traveling direction are electrically connected to each other, thereby configuring one detector structure (i.e., detection channel). Moreover, the radiation detectors are mounted onto the wiring board such that respective connection parts of electrodes, which are to be electrically connected to each other, are in a mutually-facing state.
摘要:
There are provided a radiation detection module, a printed circuit board, and a radiological imaging apparatus which make it possible to enhance spatial resolution without increasing channel number, and thereby to perform high-accuracy diagnosis. The radiation detection module includes a plurality of radiation detectors, and a wiring board on which the plurality of radiation detectors are mounted in a manner of being arranged in at least a radiation traveling direction. Here, on the wiring board, a pair of the radiation detectors which are adjacent to each other in the radiation traveling direction are electrically connected to each other, thereby configuring one detector structure (i.e., detection channel). Moreover, the radiation detectors are mounted onto the wiring board such that respective connection parts of electrodes, which are to be electrically connected to each other, are in a mutually-facing state.
摘要:
A radiological imaging apparatus allowing semiconductor radiation detectors to be easily replaced with new ones and densely arranged. Terminals (31cjk) and (33cjk) are provided on a bottom surface of a detector aggregate (40mn) including a plurality of semiconductor radiation detectors (1); the terminals is connected to electrodes (3 and 4) of the detectors (1). A plurality of zero insertion force connectors (56) are provided on a connecting device (33jk) installed on a support substrate (32h). The terminals (31cjk and 33cjk) are detachably attached to the zero insertion force connectors (56) to mount the detector aggregates (40mn) that are the semiconductor radiation detectors (1), on the support substrate (32h). When the detector aggregates (40mn) are attached to the zero insertion force connectors (56), since no frictional force acts on the terminals, the size of the gap between the detector aggregates (40mn) is reduced.
摘要:
The semiconductor radiological detector 1 minimizes a dead space resulting from the draw-out of a signal line from an electrode and which allows a number of semiconductor devices to be densely arranged to improve sensitivity and spatial resolution. The semiconductor radiological detector 1 comprises a semiconductor device 2, an anode 3 attached to one surface of the semiconductor device 2, and a cathode 4 attached to the other surface of the semiconductor device 2. A signal line 5 is provided on the anode 3; the signal line 5 extends straight from the anode 3 and is connected to an X axis wire 12. Another signal line 13 is provided on the cathode 4; the signal line 13 extends straight from the cathode 4 and is connected to a Y axis wire 14.
摘要:
Each semiconductor radiation detector used for a nuclear medicine diagnostic apparatus (PET apparatus) is constructed with an anode electrode A facing a cathode electrode C sandwiching a CdTe semiconductor member S which generates charge through interaction with γ-rays. Then, a thickness t of the semiconductor member S sandwiched between these mutually facing anode electrode A and cathode electrode C is set to 0.2 to 2 mm. Furthermore, the devices are mounted (laid out) on substrates in such a way that the distance (distance of conductor) between the semiconductor radiation detector and an analog ASIC which processes the signal detected by this detector is shortened. Furthermore, the substrates on which the detectors are mounted are housed in a housing as a unit (detector unit).
摘要:
A γ-ray signal processing section 60′ determines a detection time of a γ ray based on a α-ray detection signal outputted from a semiconductor radiation detector for detecting the γ ray, and determines the energy of the γ ray. Then, a time correction circuit 70 obtains, based on the energy of the γ ray, a detection value of the detection time that corresponds to the energy of the γ ray from a time correction table indicating the relationship between the energy of the γ ray and the correction value of the detection time of the γ ray, and corrects the detection time according to the obtained correction value of the detection time. Coincidence counting is performed on the γ ray in a coincidence counting circuit 80 based on the corrected detection time.
摘要:
A radiological imaging apparatus allowing semiconductor radiation detectors to be easily replaced with new ones and densely arranged. Terminals (31cjk) and (33cjk) are provided on a bottom surface of a detector aggregate (40mn) including a plurality of semiconductor radiation detectors (1); the terminals is connected to electrodes (3 and 4) of the detectors (1). A plurality of zero insertion force connectors (56) are provided on a connecting device (33jk) installed on a support substrate (32h). The terminals (31cjk and 33cjk) are detachably attached to the zero insertion force connectors (56) to mount the detector aggregates (40mn) that are the semiconductor radiation detectors (1), on the support substrate (32h). When the detector aggregates (40mn) are attached to the zero insertion force connectors (56), since no frictional force acts on the terminals, the size of the gap between the detector aggregates (40mn) is reduced.
摘要:
The semiconductor radiological detector 1 minimizes a dead space resulting from the draw-out of a signal line from an electrode and which allows a number of semiconductor devices to be densely arranged to improve sensitivity and spatial resolution. The semiconductor radiological detector 1 comprises a semiconductor device 2, an anode 3 attached to one surface of the semiconductor device 2, and a cathode 4 attached to the other surface of the semiconductor device 2. A signal line 5 is provided on the anode 3; the signal line 5 extends straight from the anode 3 and is connected to an X axis wire 12. Another signal line 13 is provided on the cathode 4; the signal line 13 extends straight from the cathode 4 and is connected to a Y axis wire 14.
摘要:
An X-ray CT image of a low spatial resolution image is acquired by employing a PET-X-ray CT examination apparatus. Also, a PET image is acquired by employing the PET-X-ray CT examination apparatus. Furthermore, an X-ray CT image of a high spatial resolution image is acquired by employing another X-ray CT examination apparatus. Then, the X-ray CT image equal to the low spatial resolution image is corrected by employing the X-ray CT image, so that an X-ray CT image equal to a high spatial resolution image is obtained. Since a positional relationship of the resulting X-ray CT image with respect to the PET image can be grasped, this PET image can be simply synthesized with the X-ray CT image like an image.
摘要:
The semiconductor radiological detector 1 minimizes a dead space resulting from the draw-out of a signal line from an electrode and which allows a number of semiconductor devices to be densely arranged to improve sensitivity and spatial resolution. The semiconductor radiological detector 1 comprises a semiconductor device 2, an anode 3 attached to one surface of the semiconductor device 2, and a cathode 4 attached to the other surface of the semiconductor device 2. A signal line 5 is provided on the anode 3; the signal line 5 extends straight from the anode 3 and is connected to an X axis wire 12. Another signal line 13 is provided on the cathode 4; the signal line 13 extends straight from the cathode 4 and is connected to a Y axis wire 14.