Ion-Doped Two-Dimensional Nanomaterials
    4.
    发明申请

    公开(公告)号:US20200094515A1

    公开(公告)日:2020-03-26

    申请号:US16484024

    申请日:2017-09-11

    IPC分类号: B32B5/16 C01B32/194

    摘要: Ion-doped two-dimensional nanomaterials are made by inducing electronic carriers (electrons and holes) in a two-dimensional material using a captured ion layer at the surface of the material. The captured ion layer is stabilized using a capping layer. The induction of electronic carriers works in atomically-thin two-dimensional materials, where it induces high carrier density of at least 1014 carriers/cm2. A variety of novel ion-doped nanomaterials and p-n junction-based nanoelectronic devices are made possible by the method.