公开(公告)号：US11696493B2

公开(公告)日：2023-07-04

申请号：US16955830

申请日：2018-12-20

Applicant: Novaled GmbH

Inventor： Markus Hummert ,  Thomas Rosenow ,  Tomas Kalisz

IPC: H10K85/30 ,  H10K50/155 ,  C07F3/06 ,  H10K50/15

CPC classification number: H10K85/381 ,  C07F3/06 ,  H10K50/155 ,  H10K50/15

Abstract: The present invention relates to an organic electronic device comprising at least one inverse coordination complex, the N inverse coordination complex comprising: (i) a core consisting of one atom or of a plurality of atoms forming together a covalent cluster; (ii) a first coordination sphere consisting of at least four electropositive atoms having each individually an electronegativity according to Allen of less than 2,4; and (iii) a second coordination sphere comprising a plurality of ligands; wherein the first coordination sphere is closer to the core than the second coordination sphere; and all atoms of the core have a higher electronegativity according to Allen than any of the electropositive atoms of the first coordination sphere and a method for preparing the same.

公开(公告)号：US20210202842A1

公开(公告)日：2021-07-01

申请号：US17185901

申请日：2021-02-25

Applicant: Novaled GmbH

Inventor： Omrane Fadhel ,  Carsten Rothe ,  Jan Birnstock ,  Ansgar Werner ,  Kai Gilge ,  Jens Angermann ,  Mike Zöllner ,  Francisco Bloom ,  Thomas Rosenow ,  Tobias Canzler ,  Tomas Kalisz ,  Ulrich Denker

IPC: H01L51/00 ,  H01L51/50 ,  C07F9/53 ,  C07F9/6558 ,  C07F9/64 ,  C07F9/655 ,  C07F9/572 ,  C07F9/58 ,  H01L51/56

Abstract: The present invention relates to an electrically doped semiconducting material comprising at least one metallic element as n-dopant and at least one electron transport matrix compound comprising at least one phosphine oxide group, a process for its preparation, and an electronic device comprising the electrically doped semiconducting material.

公开(公告)号：US10886491B2

公开(公告)日：2021-01-05

申请号：US15774639

申请日：2016-11-10

Applicant: Novaled GmbH

Inventor： Tomas Kalisz ,  Francois Cardinali ,  Jerome Ganier ,  Uwe Gölfert ,  Vygintas Jankus ,  Carsten Rothe ,  Benjamin Schulze ,  Steffen Willmann

IPC: H01L51/00 ,  H01L51/50 ,  C22C24/00 ,  C23C14/12 ,  C23C14/14 ,  H01L51/42

Abstract: Process for preparing a metal containing layer, the process comprising (i) at least one step of co-vaporization, at a pressure which is lower than 10−2 Pa, of a) at least one first metal selected from Li, Na, K, Rb and Cs and b) at least one second metal selected Mg, Zn, Hg, Cd and Te from a metal alloy provided in a first vaporization source which is heated to a temperature between 100° C. and 600° C., and (ii) at least one subsequent step of deposition of the first metal on a surface having a temperature which is below the temperature of the first vaporization source, wherein in step (i), the alloy is provided at least partly in form of a homogeneous phase comprising the first metal and the second metal, electronic devices comprising such materials and process for preparing the same.

公开(公告)号：US20200343461A1

公开(公告)日：2020-10-29

申请号：US16955830

申请日：2018-12-20

Applicant: Novaled GmbH

Inventor： Markus Hummert ,  Thomas Rosenow ,  Tomas Kalisz

IPC: H01L51/00

Abstract: The present invention relates to an organic electronic device comprising at least one inverse coordination complex, the N inverse coordination complex comprising: (i) a core consisting of one atom or of a plurality of atoms forming together a covalent cluster; (ii) a first coordination sphere consisting of at least four electropositive atoms having each individually an electronegativity according to Allen of less than 2,4; and (iii) a second coordination sphere comprising a plurality of ligands; wherein the first coordination sphere is closer to the core than the second coordination sphere; and all atoms of the core have a higher electronegativity according to Allen than any of the electropositive atoms of the first coordination sphere and a method for preparing the same.

公开(公告)号：US20190036032A1

公开(公告)日：2019-01-31

申请号：US15739143

申请日：2016-06-22

Applicant: Novaled GmbH

Inventor： Ulrich Denker ,  Carsten Rothe ,  Volodymyr Senkovskyy ,  Tomas Kalisz

IPC: H01L51/00 ,  H01L51/50 ,  H01L51/52 ,  H01L51/56

Abstract: The invention relates to a semiconducting material comprising (i) in substantially elemental form, an electropositive element selected from alkaline metals, alkaline earth metals, rare earth metals, and transition metals, and (ii) at least one first compound which is a compound comprising at least one polar group selected from phosphine oxide group or diazole group; a process for manufacturing the semiconducting material; an electronic device comprising a cathode, an anode and the semiconducting material.

公开(公告)号：US20180351100A1

公开(公告)日：2018-12-06

申请号：US15774627

申请日：2016-11-09

Applicant: Novaled GmbH

Inventor： Tomas Kalisz ,  Francois Cardinali ,  Jerome Ganier ,  Uwe Gölfert ,  Vygintas Jankus ,  Carsten Rothe ,  Benjamin Schulze ,  Steffen Willmann

IPC: H01L51/00 ,  H01L51/50 ,  H01L51/56

Abstract: The present invention relates to a semiconducting material comprising (i) a substantially covalent matrix material consisting of at least one substantially covalent matrix compound, (ii) at least one first metal selected from the group consisting of Li, Na, K, Rb, and Cs, and (iii) at least one second metal selected from the group consisting of Zn, Hg, Cd and Te, electronic devices comprising such materials and processes for preparing the same.

公开(公告)号：US20240298524A1

公开(公告)日：2024-09-05

申请号：US18631712

申请日：2024-04-10

Applicant: Novaled GmbH

Inventor： Omrane Fadhel ,  Carsten Rothe ,  Jan Birnstock ,  Ansgar Werner ,  Kai Gilge ,  Jens Angermann ,  Mike Zöllner ,  Francisco Bloom ,  Thomas Rosenow ,  Tobias Canzler ,  Tomas Kalisz ,  Ulrich Denker

IPC: H10K85/60 ,  C07F9/53 ,  C07F9/572 ,  C07F9/58 ,  C07F9/64 ,  C07F9/655 ,  C07F9/6558 ,  C08K5/5397 ,  H10K50/165 ,  H10K59/32 ,  H10K71/00 ,  H10K71/30 ,  H10K102/00

CPC classification number: H10K85/60 ,  C07F9/5329 ,  C07F9/5728 ,  C07F9/58 ,  C07F9/64 ,  C07F9/65522 ,  C07F9/65527 ,  C07F9/65583 ,  H10K50/165 ,  H10K71/00 ,  H10K71/30 ,  H10K85/615 ,  C08K5/5397 ,  H10K59/32 ,  H10K2102/00

Abstract: The present invention relates to an electrically doped semiconducting material comprising at least one metallic element as n-dopant and at least one electron transport matrix compound comprising at least one phosphine oxide group, a process for its preparation, and an electronic device comprising the electrically doped semiconducting material.

公开(公告)号：US10749115B2

公开(公告)日：2020-08-18

申请号：US15739143

申请日：2016-06-22

Applicant: Novaled GmbH

Inventor： Ulrich Denker ,  Carsten Rothe ,  Volodymyr Senkovskyy ,  Tomas Kalisz

IPC: H01L51/50 ,  H01L51/00 ,  H01L51/52 ,  H01L51/56

Abstract: The invention relates to a semiconducting material comprising (i) in substantially elemental form, an electropositive element selected from alkaline metals, alkaline earth metals, rare earth metals, and transition metals, and (ii) at least one first compound which is a compound comprising at least one polar group selected from phosphine oxide group or diazole group; a process for manufacturing the semiconducting material; an electronic device comprising a cathode, an anode and the semiconducting material.

公开(公告)号：US20190006611A1

公开(公告)日：2019-01-03

申请号：US15774639

申请日：2016-11-10

Applicant: Novaled GmbH

Inventor： Tomas Kalisz ,  Francois Cardinali ,  Jerome Ganier ,  Uwe Gölfert ,  Vygintas Jankus ,  Carsten Rothe ,  Benjamin Schulze ,  Steffen Willmann

IPC: H01L51/50 ,  H01L51/00

Abstract: Process for preparing a metal containing layer, the process comprising (i) at least one step of co-vaporization, at a pressure which is lower than 10−2 Pa, of a) at least one first metal selected from Li, Na, K, Rb and Cs and b) at least one second metal selected Mg, Zn, Hg, Cd and Te from a metal alloy provided in a first vaporization source which is heated to a temperature between 100° C. and 600° C., and (ii) at least one subsequent step of deposition of the first metal on a surface having a temperature which is below the temperature of the first vaporization source, wherein in step (i), the alloy is provided at least partly in form of a homogeneous phase comprising the first metal and the second metal, electronic devices comprising such materials and process for preparing the same.

公开(公告)号：US20180331292A1

公开(公告)日：2018-11-15

申请号：US15774634

申请日：2016-11-09

Applicant: Novaled GmbH

Inventor： Tomas Kalisz ,  Francois Cardinali ,  Jerome Ganier ,  Uwe Gölfert ,  Vygintas Jankus ,  Carsten Rothe ,  Benjamin Schulze ,  Steffen Willmann

IPC: H01L51/00 ,  H01L51/50 ,  H01L51/52 ,  H01L51/44 ,  C23C14/14 ,  C23C14/24 ,  C23C28/00

CPC classification number: H01L51/0021 ,  C23C14/14 ,  C23C14/24 ,  C23C28/00 ,  H01L51/001 ,  H01L51/002 ,  H01L51/441 ,  H01L51/5092 ,  H01L51/5203 ,  Y02E10/549

Abstract: The present invention relates to a metallic layer adjacent to a semiconducting layer comprising a substantially covalent matrix material, the metallic layer comprising at least one first metal and at least one second metal, wherein a) the first metal is selected from the group consisting of Li, Na, K, Rb, Cs; and b) the second metal is selected from the group consisting of Zn, Hg, Cd, Te, electronic devices comprising such materials and process for preparing the same.