公开(公告)号：US20240298524A1

公开(公告)日：2024-09-05

申请号：US18631712

申请日：2024-04-10

Applicant: Novaled GmbH

Inventor： Omrane Fadhel ,  Carsten Rothe ,  Jan Birnstock ,  Ansgar Werner ,  Kai Gilge ,  Jens Angermann ,  Mike Zöllner ,  Francisco Bloom ,  Thomas Rosenow ,  Tobias Canzler ,  Tomas Kalisz ,  Ulrich Denker

IPC: H10K85/60 ,  C07F9/53 ,  C07F9/572 ,  C07F9/58 ,  C07F9/64 ,  C07F9/655 ,  C07F9/6558 ,  C08K5/5397 ,  H10K50/165 ,  H10K59/32 ,  H10K71/00 ,  H10K71/30 ,  H10K102/00

CPC classification number: H10K85/60 ,  C07F9/5329 ,  C07F9/5728 ,  C07F9/58 ,  C07F9/64 ,  C07F9/65522 ,  C07F9/65527 ,  C07F9/65583 ,  H10K50/165 ,  H10K71/00 ,  H10K71/30 ,  H10K85/615 ,  C08K5/5397 ,  H10K59/32 ,  H10K2102/00

Abstract: The present invention relates to an electrically doped semiconducting material comprising at least one metallic element as n-dopant and at least one electron transport matrix compound comprising at least one phosphine oxide group, a process for its preparation, and an electronic device comprising the electrically doped semiconducting material.

公开(公告)号：US11856845B2

公开(公告)日：2023-12-26

申请号：US16955756

申请日：2018-12-20

Applicant: Sumitomo Chemical Company Limited

Inventor： Nazrul Islam ,  William Tarran ,  Jean-Benoit Giguere

IPC: C07D249/08 ,  H10K85/60 ,  H10K50/17 ,  H10K71/00 ,  H10K71/30 ,  H10K71/40

CPC classification number: H10K85/654 ,  C07D249/08 ,  H10K85/631 ,  H10K50/171 ,  H10K71/00 ,  H10K71/30 ,  H10K71/40

Abstract: Compound A compound of formula (I): (I) wherein R1 and R2 are each independently a linear, branched or cyclic C1-20alkyl group; and Ar1 and Ar2 are each independently an aromatic or heteroaromatic group which is unsubstituted or substituted with one or more substituents. The compound may be used in n-doping of an organic semiconductor. Such an n-doped organic semiconductor may be used in an organic electronic device, for example an electron injection layer of an organic light-emitting device.

公开(公告)号：US20240237368A1

公开(公告)日：2024-07-11

申请号：US18562830

申请日：2021-10-19

Applicant: Shangrao Xinyuan YueDong Technology Development Co. Ltd.

Inventor： Kyungdong LEE ,  Giwon LEE ,  Hyunho KIM ,  Ilhyoung JUNG

IPC: H10K30/57 ,  H10K30/40 ,  H10K30/86 ,  H10K71/00 ,  H10K71/30 ,  H10K85/60

CPC classification number: H10K30/57 ,  H10K30/40 ,  H10K30/86 ,  H10K71/00 ,  H10K71/30 ,  H10K85/633

Abstract: A solar cell manufacturing method according to this embodiment includes: forming a second photoelectric conversion portion including a semiconductor substrate, a first semiconductor layer on one side of the semiconductor substrate, and a second semiconductor layer having a different conductivity type from the first semiconductor layer on the other side of the semiconductor substrate; forming a junction layer on the first semiconductor layer; changing a surface property of a front surface of the junction layer; forming a first photoelectric conversion portion including a photoelectric conversion layer including a perovskite compound on the front surface of the junction layer; and forming a first electrode electrically connected to the first photoelectric conversion portion on one side of the first photoelectric conversion portion and a second electrode electrically connected to the second photoelectric conversion portion on the other side of the second photoelectric conversion portion. Therefore, in a tandem structure provided with the first photoelectric conversion portion including the perovskite compound and the second photoelectric conversion portion including the semiconductor substrate, an adhesion property can be improved by changing the junction layer between the first photoelectric conversion portion and the second photoelectric conversion portion to hydrophilicity.

公开(公告)号：US12022672B2

公开(公告)日：2024-06-25

申请号：US17881878

申请日：2022-08-05

Applicant: Novaled GmbH

Inventor： Ulrich Heggemann ,  Markus Hummert

IPC: H01L51/50 ,  C07F3/02 ,  C07F3/06 ,  C07F5/02 ,  C09K11/06 ,  H10K50/155 ,  H10K50/17 ,  H10K59/35 ,  H10K71/00 ,  H10K71/30 ,  H10K85/30 ,  H10K85/60 ,  H10K30/30 ,  H10K50/11 ,  H10K50/16 ,  H10K50/165 ,  H10K50/18 ,  H10K71/16 ,  H10K102/10

CPC classification number: H10K50/155 ,  C07F3/02 ,  C07F3/06 ,  C07F5/022 ,  C09K11/06 ,  H10K50/171 ,  H10K59/35 ,  H10K71/00 ,  H10K71/30 ,  H10K85/30 ,  H10K85/322 ,  H10K85/341 ,  H10K85/381 ,  H10K85/60 ,  H10K85/622 ,  H10K85/633 ,  H10K85/636 ,  H10K85/657 ,  H10K85/6572 ,  C09K2211/1018 ,  H10K30/30 ,  H10K50/11 ,  H10K50/16 ,  H10K50/165 ,  H10K50/17 ,  H10K50/18 ,  H10K71/164 ,  H10K85/615 ,  H10K2102/103

Abstract: The present invention relates to an electronic device comprising between a first electrode and a second electrode at least one first semiconducting layer comprising



(i) at least one first hole transport matrix compound consisting of covalently bound atoms and
(ii) at least one electrical p-dopant selected from metal borate complexes, wherein the metal borate complex consists of at least one metal cation and at least one anionic ligand consisting of at least six covalently bound atoms which comprises at least one boron atom,

wherein the first semiconducting layer is a hole injection layer, a hole-injecting part of a charge generating layer or a hole transport layer, a method for preparing the same and a respective metal borate compound.

公开(公告)号：US20240196638A1

公开(公告)日：2024-06-13

申请号：US18044181

申请日：2022-03-24

Applicant: BEIJING BOE TECHNOLOGY DEVELOPMENT CO., LTD. ,  BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Haowei WANG

IPC: H10K50/115 ,  H10K50/13 ,  H10K50/15 ,  H10K50/155 ,  H10K50/86 ,  H10K71/12 ,  H10K71/30 ,  H10K102/00

CPC classification number: H10K50/115 ,  H10K50/13 ,  H10K50/155 ,  H10K50/157 ,  H10K50/865 ,  H10K71/12 ,  H10K71/30 ,  H10K2102/351

Abstract: A light-emitting device includes a first electrode and a second electrode arranged opposite to each other, and a light-emitting functional layer located between the first electrode and the second electrode. The light-emitting functional layer includes a first light-emitting layer, and the first light-emitting layer includes a first light-emitting material. The first light-emitting material is configured to emit light in response to a control of an electrical signal on the first electrode and an electrical signal on the second electrode. The light-emitting functional layer further includes a second light-emitting material. A difference between a Stokes shift of the first light-emitting material and a Stokes shift of the second light-emitting material is in a range of 10 nm to 50 nm, inclusive.

公开(公告)号：US20230337454A1

公开(公告)日：2023-10-19

申请号：US18004068

申请日：2021-07-02

Applicant: MICROOLED ,  COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Inventor： Gunther HAAS ,  Benoit DUGRENIL ,  Sébastien GUILLAMET ,  Myriam TOURNAIRE ,  Tony MAINDRON

IPC: H10K71/20 ,  H10K50/12 ,  H10K50/13 ,  H10K71/30

CPC classification number: H10K50/131 ,  H10K50/12 ,  H10K71/233 ,  H10K71/30

Abstract: An optoelectronic device that includes a substrate and a stack of organic layers that has at least one active layer arranged between a reflective surface and a semi-reflective surface arranged facing one another at a given distance and forming an optical cavity. The device includes at least three groups of pixels, each group of which is characterized by a cavity of a different optical length, the cavity having a number of bilayers arranged between the substrate and said stack of organic layers, each bilayer being formed of a first transparent and conductive layer of a first transparent and conductive material, and of a second transparent and conductive layer of a second transparent and conductive material, in direct contact with the first transparent and conductive layer.

公开(公告)号：US20230180494A1

公开(公告)日：2023-06-08

申请号：US18098182

申请日：2023-01-18

Applicant: Pictiva Displays International Limited

Inventor： Andreas Rausch ,  Niels Gerlitzki

IPC: H10K50/11 ,  H10K50/12 ,  H10K50/15 ,  H10K50/16 ,  H10K50/17 ,  H10K50/18 ,  H10K50/81 ,  H10K50/82 ,  H10K50/155 ,  H10K50/165 ,  H10K71/00 ,  H10K71/30 ,  H10K85/60

CPC classification number: H10K50/11 ,  H10K50/18 ,  H10K85/649 ,  H10K50/17 ,  H10K50/156 ,  H10K50/165 ,  H10K71/30 ,  H10K50/81 ,  H10K50/16 ,  H10K71/00 ,  H10K50/12 ,  H10K50/82 ,  H10K50/15 ,  H10K50/155 ,  H10K50/166 ,  H10K50/171 ,  H10K2102/103 ,  H10K2101/40 ,  Y02E10/549

Abstract: The invention relates to an organic electronic component comprising a cathode, an anode, at least one light-emitting layer which is arranged between the anode and the cathode, a first layer, which comprises a first matrix material and a dopant, a second layer, which comprises a second matrix material, wherein the first layer is arranged between the second layer and the anode, wherein the second layer is arranged between the anode and the at least one light-emitting layer, wherein the dopant is a fluorinated sulfonimide metal salt of the following formula 1:

公开(公告)号：US20240381673A1

公开(公告)日：2024-11-14

申请号：US18783071

申请日：2024-07-24

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Gerben DOORNBOS ,  Marcus Johannes Henricus VAN DAL ,  Timothy VASEN

IPC: H10K10/46 ,  H10K10/84 ,  H10K19/10 ,  H10K71/10 ,  H10K71/18 ,  H10K71/20 ,  H10K71/30 ,  H10K71/80 ,  H10K85/20

Abstract: In a method of forming a gate-all-around field effect transistor (GAA FET), a fin structure including CNTs embedded in a semiconductor layer is formed, a sacrificial gate structure is formed over the fin structure, the semiconductor layer is doped at a source/drain region of the fin structure, an isolation insulating layer is formed, a source/drain opening is formed by patterning the isolation insulating layer, and a source/drain contact layer is formed over the doped source/drain region of the fin structure.

公开(公告)号：US20240304756A1

公开(公告)日：2024-09-12

申请号：US18534916

申请日：2023-12-11

Applicant: Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd.

Inventor： Xuebin CHEN

IPC: H01L33/26 ,  H01L33/00 ,  H01L33/40 ,  H10K50/12 ,  H10K71/30 ,  H10K71/60 ,  H10K85/10

CPC classification number: H01L33/26 ,  H01L33/0095 ,  H01L33/40 ,  H10K50/12 ,  H10K71/30 ,  H10K71/611 ,  H10K85/113 ,  H01L27/156

Abstract: Disclosed is a light-emitting device, a preparation method, and a display panel. The light-emitting device includes an anode layer and a cathode layer disposed opposite to each other, a light-emitting layer disposed between the anode layer and the cathode layer, and a first interface-modifying layer disposed between the light-emitting layer and the anode layer. The first interface-modifying layer includes a thiophene-based polymer and a graphyne doped in the thiophene-based polymer and includes a first sub-layer close to the light-emitting layer and a second sub-layer close to the anode layer, and a doping ratio of the graphyne in the first sub-layer is greater than a doping ratio of the graphyne in the second sub-layer.

公开(公告)号：US11950441B2

公开(公告)日：2024-04-02

申请号：US16300663

申请日：2017-02-21

Applicant: Siemens Aktiengesellschaft

Inventor： Florian Kessler

IPC: H10K50/165 ,  H10K50/16 ,  H10K71/30 ,  H10K85/30

CPC classification number: H10K50/165 ,  H10K50/16 ,  H10K50/166 ,  H10K71/30 ,  H10K85/341 ,  H10K85/346 ,  H10K85/371

Abstract: Various embodiments may include an organic electron-conducting layer comprising an n-dopant having the structure:






wherein Ln denotes a number n of independently selected ligands L; M is a metal; R and R′ comprise compounds independently selected; n is from 0 to 5; m is from 1 to 6; n+m is from 2 to 6; and x has a value of 0, 1 or 2.