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10 条记录 (耗时 0.017 秒)

    Organic light emitting device comprising polar matrix, metal dopant and silver cathode
    7.
    发明授权
    Organic light emitting device comprising polar matrix, metal dopant and silver cathode 有权

    公开(公告)号：US11355721B2

    公开(公告)日：2022-06-07

    申请号：US15738672

    申请日：2016-06-22

    申请人： Novaled GmbH

    发明人： Uwe Gölfert ,  Carsten Rothe ,  Vygintas Jankus

    IPC分类号： H01L51/54 ,  H01L51/50 ,  H01L51/52 ,  H01L51/00

    摘要： The present invention relates to an electronic device comprising at least one light emitting layer between an anode and a substantially silver cathode, the device further comprising between the cathode and the anode at least one mixed layer comprising (i) at least one substantially covalent electron transport matrix compound comprising at least one polar group selected from phosphine oxide group or diazole group, and (ii) in substantially elemental form, an electropositive element selected from substantially non-radioactive alkali metals, alkaline earth metals, rare earth metals, and transition metals of the fourth period of the Periodic table having proton numbers 22, 23, 24, 25, 26, 27, 28, 29.

    Process for Making a Metal Containiner Layer
    8.
    发明申请
    Process for Making a Metal Containiner Layer 审中-公开

    公开(公告)号：US20190006611A1

    公开(公告)日：2019-01-03

    申请号：US15774639

    申请日：2016-11-10

    申请人： Novaled GmbH

    发明人： Tomas Kalisz ,  Francois Cardinali ,  Jerome Ganier ,  Uwe Gölfert ,  Vygintas Jankus ,  Carsten Rothe ,  Benjamin Schulze ,  Steffen Willmann

    IPC分类号： H01L51/50 ,  H01L51/00

    摘要： Process for preparing a metal containing layer, the process comprising (i) at least one step of co-vaporization, at a pressure which is lower than 10−2 Pa, of a) at least one first metal selected from Li, Na, K, Rb and Cs and b) at least one second metal selected Mg, Zn, Hg, Cd and Te from a metal alloy provided in a first vaporization source which is heated to a temperature between 100° C. and 600° C., and (ii) at least one subsequent step of deposition of the first metal on a surface having a temperature which is below the temperature of the first vaporization source, wherein in step (i), the alloy is provided at least partly in form of a homogeneous phase comprising the first metal and the second metal, electronic devices comprising such materials and process for preparing the same.