公开(公告)号：US09653416B2

公开(公告)日：2017-05-16

申请号：US15044361

申请日：2016-02-16

申请人： OLYMPUS CORPORATION

发明人： Chihiro Migita ,  Hisashi Ishida ,  Yoshiaki Takemoto

IPC分类号： H01L23/00 ,  H01L21/66

CPC分类号： H01L24/05 ,  H01L22/14 ,  H01L24/03 ,  H01L24/13 ,  H01L24/94 ,  H01L2224/03001 ,  H01L2224/03464 ,  H01L2224/0347 ,  H01L2224/0401 ,  H01L2224/05009 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/13026 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2224/03 ,  H01L2924/00012

摘要： A method of manufacturing a semiconductor substrate includes a device-forming process of forming a plurality of device areas in a substrate section, a first wiring process of forming circuit wirings connected to the plurality of device areas, an electrode pad-forming process of forming a plurality of electrode pads, a second wiring process of forming a potential adjustment wiring electrically connecting at least a part of the electrode pads, an electrode-forming process of forming electrode bodies on the electrode pads by electroless plating after the second wiring process, and a potential adjustment-releasing process of releasing a connection by the potential adjustment wiring after the electrode-forming process.

公开(公告)号：US20160163664A1

公开(公告)日：2016-06-09

申请号：US15044361

申请日：2016-02-16

申请人： OLYMPUS CORPORATION

发明人： Chihiro Migita ,  Hisashi Ishida ,  Yoshiaki Takemoto

IPC分类号： H01L23/00

CPC分类号： H01L24/05 ,  H01L22/14 ,  H01L24/03 ,  H01L24/13 ,  H01L24/94 ,  H01L2224/03001 ,  H01L2224/03464 ,  H01L2224/0347 ,  H01L2224/0401 ,  H01L2224/05009 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/13026 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2224/03 ,  H01L2924/00012

摘要： A method of manufacturing a semiconductor substrate includes a device-forming process of forming a plurality of device areas in a substrate section, a first wiring process of forming circuit wirings connected to the plurality of device areas, an electrode pad-forming process of forming a plurality of electrode pads, a second wiring process of forming a potential adjustment wiring electrically connecting at least a part of the electrode pads, an electrode-forming process of forming electrode bodies on the electrode pads by electroless plating after the second wiring process, and a potential adjustment-releasing process of releasing a connection by the potential adjustment wiring after the electrode-forming process.

摘要翻译： 一种制造半导体衬底的方法包括在衬底部分中形成多个器件区域的器件形成工艺，形成连接到多个器件区域的电路布线的第一布线工艺，形成 多个电极焊盘，形成电连接电极焊盘的至少一部分的电位调整布线的第二布线处理，在第二布线处理之后通过无电解电镀在电极焊盘上形成电极体的电极形成工艺，以及 在电极形成处理之后通过电位调节布线释放连接的电位调节释放过程。