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11 条记录 (耗时 0.017 秒)

    IMAGING DEVICE
    1.
    发明申请
    IMAGING DEVICE 审中-公开
    成像装置

    公开(公告)号：US20140194748A1

    公开(公告)日：2014-07-10

    申请号：US14137242

    申请日：2013-12-20

    申请人： OLYMPUS CORPORATION

    发明人： Yusuke Yamamoto ,  Kosei Tamiya

    IPC分类号： A61B5/00

    CPC分类号： A61B5/0059 ,  A61B5/0086 ,  A61B5/489

    摘要： A color filter has a transmission band in a visible region and an infrared region. A first substrate is arranged below the color filter and has a first photoelectric conversion element which outputs a first signal charge according to an amount of exposure of a light passing through the color filter. A second substrate has a second photoelectric conversion element outputting a second signal charge according to an amount of exposure of a light, having sensitivity in at least the infrared region, which passes through the first substrate, and is arranged on a surface on an opposite side to a light-receiving surface of the first substrate. A signal read-out circuit reads out the first signal charge as a first electrical signal, and reads out the second signal charge as a second electrical signal.

    摘要翻译： 滤色器在可见区域和红外区域中具有透射带。 第一基板布置在滤色器下方，并且具有第一光电转换元件，其根据通过滤色器的光的曝光量来输出第一信号电荷。 第二基板具有第二光电转换元件，该第二光电转换元件根据通过第一基板的至少具有红外区域的灵敏度的光的曝光量输出第二信号电荷，并且布置在相对侧的表面上 到第一基板的光接收表面。 信号读出电路将第一信号电荷作为第一电信号读出，并将第二信号电荷作为第二电信号读出。

    SOLID-STATE IMAGING DEVICE
    2.
    发明申请
    SOLID-STATE IMAGING DEVICE 审中-公开

    公开(公告)号：US20180167575A1

    公开(公告)日：2018-06-14

    申请号：US15873240

    申请日：2018-01-17

    申请人： OLYMPUS CORPORATION

    发明人： Nobuyuki Watanabe ,  Toru Kondo ,  Kosei Tamiya

    IPC分类号： H04N5/3745 ,  H04N5/378

    CPC分类号： H04N5/3745 ,  H01L27/146 ,  H04N5/3454 ,  H04N5/37452 ,  H04N5/378

    摘要： A solid-state imaging device includes n first photoelectric conversion elements configured to photoelectrically convert incident light, n first reading circuits configured to output corresponding first pixel signals, m second photoelectric conversion elements configured to photoelectrically convert incident light, m second reading circuits configured to sequentially output corresponding second pixel signals, and a reading control circuit, wherein each of the second reading circuits includes a detection circuit configured to output an event signal when a change in a second charge signal is detected and a pixel signal generation circuit configured to add address information to an event signal, and the reading control circuit causes the first pixel signal to be output by determining a reading region corresponding to address information, and n and m are natural numbers greater than or equal to 2.

    SOLID-STATE IMAGING DEVICE
    3.
    发明申请
    SOLID-STATE IMAGING DEVICE 审中-公开

    公开(公告)号：US20180152644A1

    公开(公告)日：2018-05-31

    申请号：US15865705

    申请日：2018-01-09

    申请人： OLYMPUS CORPORATION

    发明人： Toru Kondo ,  Kosei Tamiya ,  Nobuyuki Watanabe

    IPC分类号： H04N5/345 ,  H04N5/3745 ,  H04N5/14 ,  H01L27/14

    CPC分类号： H04N5/345 ,  H01L27/14 ,  H01L27/14605 ,  H01L27/14607 ,  H01L27/1461 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14643 ,  H04N5/144 ,  H04N5/3745 ,  H04N5/379

    摘要： A solid-state imaging device includes a first semiconductor substrate to which light is incident; a second semiconductor substrate stacked to the first semiconductor substrate; n first photoelectric conversion devices periodically arranged in the first semiconductor substrate and generating first electric charge signals; n first reading circuits arranged in correspondence with the n first photoelectric conversion devices in the first semiconductor substrate, respectively, each of the n first reading circuits accumulating the first electric charge signal outputting a signal voltage corresponding to the accumulated first electric charge signal as a first pixel signal; a driving circuit sequentially outputting the first pixel signal; m second photoelectric conversion devices periodically arranged in one of the first/second semiconductor substrates and generating second electric charge signals; and m second reading circuits sequentially outputting a second pixel signal, wherein m and n are natural numbers equal to 2 or more than 2.

    SOLID-STATE IMAGING DEVICE
    4.
    发明申请
    SOLID-STATE IMAGING DEVICE 审中-公开

    公开(公告)号：US20170294467A1

    公开(公告)日：2017-10-12

    申请号：US15631283

    申请日：2017-06-23

    申请人： OLYMPUS CORPORATION

    发明人： Kosei Tamiya

    IPC分类号： H01L27/146 ,  H04N5/369

    CPC分类号： H01L27/14605 ,  H01L27/14607 ,  H01L27/14621 ,  H01L27/14623 ,  H01L2924/0002 ,  H04N5/332 ,  H04N5/369 ,  H04N5/379 ,  H01L2924/00

    摘要： A solid-state imaging device includes a first semiconductor substrate in which first photoelectric conversion layers photoelectrically converting incident light in a first wavelength band are formed, a second semiconductor substrate in which second photoelectric conversion layers photoelectrically converting incident light are formed, a conductive layer disposed between the first semiconductor substrate and the second semiconductor substrate and having conductivity, an insulation film disposed between the second semiconductor substrate and the conductive layer and having an insulation property, in which light passing through the first photoelectric conversion layer, the conductive layer, and the insulation film is incident on the second semiconductor substrate, a predetermined voltage is applied to the conductive layer, and a wavelength of light in a second wavelength band photoelectrically converted by the second photoelectric conversion layer when the predetermined voltage is applied to the conductive layer is longer than when the predetermined voltage is not applied.

    Solid-state imaging device
    5.
    发明授权
    Solid-state imaging device 有权

    公开(公告)号：US10321081B2

    公开(公告)日：2019-06-11

    申请号：US15873240

    申请日：2018-01-17

    申请人： OLYMPUS CORPORATION

    发明人： Nobuyuki Watanabe ,  Toru Kondo ,  Kosei Tamiya

    IPC分类号： H04N5/3745 ,  H04N5/378 ,  H01L27/146 ,  H04N5/345

    摘要： A solid-state imaging device includes n first photoelectric conversion elements configured to photoelectrically convert incident light, n first reading circuits configured to output corresponding first pixel signals, m second photoelectric conversion elements configured to photoelectrically convert incident light, m second reading circuits configured to sequentially output corresponding second pixel signals, and a reading control circuit, wherein each of the second reading circuits includes a detection circuit configured to output an event signal when a change in a second charge signal is detected and a pixel signal generation circuit configured to add address information to an event signal, and the reading control circuit causes the first pixel signal to be output by determining a reading region corresponding to address information, and n and m are natural numbers greater than or equal to 2.

    Image capturing module and image capturing apparatus
    7.
    发明授权
    Image capturing module and image capturing apparatus 有权
    图像捕获模块和图像捕获装置

    公开(公告)号：US09494768B2

    公开(公告)日：2016-11-15

    申请号：US14549315

    申请日：2014-11-20

    申请人： OLYMPUS CORPORATION

    发明人： Yasuhiro Komiya ,  Kosei Tamiya

    IPC分类号： H04N5/335 ,  G02B13/00 ,  G01J3/36 ,  A61B5/00 ,  A61B5/103 ,  G01J3/51 ,  G01J3/28 ,  G01J3/02 ,  G02B27/10 ,  H04N5/235 ,  H04N9/04

    CPC分类号： G02B13/0055 ,  A61B5/0077 ,  A61B5/1032 ,  A61B2562/0233 ,  G01J3/0208 ,  G01J3/2823 ,  G01J3/36 ,  G01J3/513 ,  G01J2003/2826 ,  G02B27/1013 ,  H04N5/2358 ,  H04N9/045 ,  H04N2209/047

    摘要： Provided is an image capturing module including a microlens array that collects light from a subject, which is imaged at an image plane; a filter that allows light in specific wavelength bands in the collected light to pass therethrough; and an image capturing device that acquires images of the light passing through the filter, wherein the filter is formed by arraying a plurality of RGB filter portions and a plurality of narrow-band filter portions, the image capturing device includes a plurality of color-wavelength obtaining regions and a plurality of narrow-band-wavelength obtaining regions, and the microlens array includes a plurality of first microlenses corresponding to the respective color-wavelength obtaining regions and a plurality of second microlenses corresponding to the respective narrow-band-wavelength obtaining regions, and the first microlenses are each disposed so that the light from the subject imaged at the image plane reaches at least one of the color-wavelength obtaining regions.

    摘要翻译： 提供了一种图像捕获模块，包括收集来自被摄体的光的微透镜阵列，其被成像在图像平面; 滤光器，其允许所收集的光中的特定波长带中的光通过; 以及图像拍摄装置，其获取通过所述滤光器的光的图像，其中，所述滤光器通过排列多个RGB滤光器部分和多个窄带滤光器部分而形成，所述图像捕获装置包括多个彩色波长 获取区域和多个窄带波长获得区域，并且微透镜阵列包括对应于各个颜色波长获得区域的多个第一微透镜和对应于各个窄带波长获得区域的多个第二微透镜 并且第一微透镜各自被设置为使得在图像平面成像的被摄体的光到达颜色波长获得区域中的至少一个。

    Solid-state imaging device
    8.
    发明授权
    Solid-state imaging device 有权

    公开(公告)号：US10700108B2

    公开(公告)日：2020-06-30

    申请号：US15631283

    申请日：2017-06-23

    申请人： OLYMPUS CORPORATION

    发明人： Kosei Tamiya

    IPC分类号： H01L27/146 ,  H04N5/33 ,  H04N5/369

    摘要： A solid-state imaging device includes a first semiconductor substrate in which first photoelectric conversion layers photoelectrically converting incident light in a first wavelength band are formed, a second semiconductor substrate in which second photoelectric conversion layers photoelectrically converting incident light are formed, a conductive layer disposed between the first semiconductor substrate and the second semiconductor substrate and having conductivity, an insulation film disposed between the second semiconductor substrate and the conductive layer and having an insulation property, in which light passing through the first photoelectric conversion layer, the conductive layer, and the insulation film is incident on the second semiconductor substrate, a predetermined voltage is applied to the conductive layer, and a wavelength of light in a second wavelength band photoelectrically converted by the second photoelectric conversion layer when the predetermined voltage is applied to the conductive layer is longer than when the predetermined voltage is not applied.

    Solid-state imaging device
    9.
    发明授权
    Solid-state imaging device 有权

    公开(公告)号：US10218922B2

    公开(公告)日：2019-02-26

    申请号：US15865705

    申请日：2018-01-09

    申请人： OLYMPUS CORPORATION

    发明人： Toru Kondo ,  Kosei Tamiya ,  Nobuyuki Watanabe

    IPC分类号： H04N5/345 ,  H01L27/146 ,  H01L27/14 ,  H04N5/3745 ,  H04N5/14 ,  H04N5/369

    摘要： A solid-state imaging device includes a first semiconductor substrate to which light is incident; a second semiconductor substrate stacked to the first semiconductor substrate; n first photoelectric conversion devices periodically arranged in the first semiconductor substrate and generating first electric charge signals; n first reading circuits arranged in correspondence with the n first photoelectric conversion devices in the first semiconductor substrate, respectively, each of the n first reading circuits accumulating the first electric charge signal outputting a signal voltage corresponding to the accumulated first electric charge signal as a first pixel signal; a driving circuit sequentially outputting the first pixel signal; m second photoelectric conversion devices periodically arranged in one of the first/second semiconductor substrates and generating second electric charge signals; and m second reading circuits sequentially outputting a second pixel signal, wherein m and n are natural numbers equal to 2 or more than 2.