公开(公告)号：US09691810B1

公开(公告)日：2017-06-27

申请号：US14974362

申请日：2015-12-18

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Yuanwei Zheng ,  Gang Chen ,  Duli Mao ,  Dyson Tai ,  Arvind Kumar ,  Hung Chih Chang ,  Chih-Wei Hsiung

IPC: H01L27/146

CPC classification number: H01L27/14685 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14645

Abstract: An image sensor includes a plurality of photodiodes arranged in an array and disposed in a semiconductor material with pinning wells disposed between individual photodiodes in the plurality of photodiodes. The image sensor also includes a microlens layer. The microlens layer is disposed proximate to the semiconductor material and is optically aligned with the plurality of photodiodes. A spacer layer disposed between the semiconductor material and the microlens layer. The spacer layer has a concave cross-sectional profile across the array, and the microlens layer is conformal with the concave cross-sectional profile of the spacer layer.

公开(公告)号：US20160211295A1

公开(公告)日：2016-07-21

申请号：US14601010

申请日：2015-01-20

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Gang Chen ,  Duli Mao ,  Yuanwei Zheng ,  Chih-Wei Hsiung ,  Arvind Kumar ,  Dyson H. Tai

IPC: H01L27/146

CPC classification number: H01L27/14621 ,  H01L27/14612 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14647

Abstract: A back side illuminated image sensor includes a semiconductor material having a front side and a back side. The semiconductor material is disposed between image sensor circuitry and a light filter array. The image sensor circuitry is disposed on the front side, and the light filter array is disposed proximate to the back side. The image sensor includes a first pixel with a first doped region that extends from the image sensor circuitry into the semiconductor material a first depth. The first pixel also includes a second doped region that is disposed between the back side of the semiconductor material and the first doped region. The second doped region is electrically isolated from the first doped region. A second pixel with a third doped region is also included in the image sensor. The third doped region extends from the image sensor circuitry into the semiconductor material a second depth.

Abstract translation: 背面照明图像传感器包括具有前侧和后侧的半导体材料。 半导体材料设置在图像传感器电路和滤光器阵列之间。 图像传感器电路设置在前侧，并且滤光器阵列靠近背面设置。 图像传感器包括具有第一掺杂区域的第一像素，其从图像传感器电路延伸到半导体材料第一深度。 第一像素还包括设置在半导体材料的背面和第一掺杂区之间的第二掺杂区域。 第二掺杂区域与第一掺杂区域电隔离。 具有第三掺杂区域的第二像素也包括在图像传感器中。 第三掺杂区域从图像传感器电路延伸到半导体材料第二深度。

公开(公告)号：US09565405B2

公开(公告)日：2017-02-07

申请号：US14612961

申请日：2015-02-03

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Gang Chen ,  Dominic Massetti ,  Chih-Wei Hsiung ,  Arvind Kumar ,  Yuanwei Zheng ,  Duli Mao ,  Dyson H. Tai

IPC: H04N9/04 ,  H01L27/146 ,  H04N5/3745

CPC classification number: H04N9/045 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14647 ,  H04N5/37457

Abstract: A back side illuminated image sensor includes a pixel array including semiconductor material, and image sensor circuitry disposed on a front side of the semiconductor material to control operation of the pixel array. A first pixel includes a first doped region disposed proximate to a back side of the semiconductor material and extends into the semiconductor material a first depth to reach the image sensor circuitry. A second pixel with a second doped region is disposed proximate to the back side of the semiconductor material and extends into the semiconductor material a second depth which is less than the first depth. A third doped region is disposed between the second doped region and the image sensor circuitry on the front side of the semiconductor material. The third doped region is electrically isolated from the first doped region and the second doped region.

Abstract translation: 背面照明图像传感器包括包括半导体材料的像素阵列和设置在半导体材料的前侧上以控制像素阵列的操作的图像传感器电路。 第一像素包括靠近半导体材料的背面设置的第一掺杂区域，并延伸到半导体材料中以到达图像传感器电路的第一深度。 具有第二掺杂区域的第二像素设置在半导体材料的背面附近并且延伸到半导体材料中的比第一深度小的第二深度。 第三掺杂区域设置在半导体材料的前侧上的第二掺杂区域和图像传感器电路之间。 第三掺杂区域与第一掺杂区域和第二掺杂区域电隔离。

公开(公告)号：US09240431B1

公开(公告)日：2016-01-19

申请号：US14790330

申请日：2015-07-02

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Yuanwei Zheng ,  Gang Chen ,  Duli Mao ,  Dyson H. Tai ,  Chih-Wei Hsiung ,  Arvind Kumar

IPC: H01L21/00 ,  H01L27/146

CPC classification number: H01L27/14687 ,  H01L21/76224 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14689

Abstract: An image sensor including a plurality of photodiodes disposed in a semiconductor layer and a plurality of deep trench isolation regions disposed in the semiconductor layer. The plurality of deep trench isolation regions include: (1) an oxide layer disposed on an inner surface of the plurality of deep trench isolation regions and (2) a conductive fill disposed in the plurality of deep trench isolation regions where the oxide layer is disposed between the semiconductor layer and the conductive fill. A plurality of pinning wells is also disposed in the semiconductor layer, and the plurality of pinning wells in combination with the plurality of deep trench isolation regions separate individual photodiodes in the plurality of photodiodes. A fixed charge layer is disposed on the semiconductor layer, and the plurality of deep trench isolation regions are disposed between the plurality of pinning wells and the fixed charge layer.

公开(公告)号：US09111993B1

公开(公告)日：2015-08-18

申请号：US14465054

申请日：2014-08-21

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Yuanwei Zheng ,  Gang Chen ,  Duli Mao ,  Dyson H. Tai ,  Chih-Wei Hsiung ,  Arvind Kumar

IPC: H01L21/76 ,  H01L21/762

CPC classification number: H01L27/14687 ,  H01L21/76224 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14689

Abstract: An image sensor including a plurality of photodiodes disposed in a semiconductor layer and a plurality of deep trench isolation regions disposed in the semiconductor layer. The plurality of deep trench isolation regions include: (1) an oxide layer disposed on an inner surface of the plurality of deep trench isolation regions and (2) a conductive fill disposed in the plurality of deep trench isolation regions where the oxide layer is disposed between the semiconductor layer and the conductive fill. A plurality of pinning wells is also disposed in the semiconductor layer, and the plurality of pinning wells in combination with the plurality of deep trench isolation regions separate individual photodiodes in the plurality of photodiodes. A fixed charge layer is disposed on the semiconductor layer, and the plurality of deep trench isolation regions are disposed between the plurality of pinning wells and the fixed charge layer.

Abstract translation: 包括设置在半导体层中的多个光电二极管和设置在半导体层中的多个深沟槽隔离区域的图像传感器。 多个深沟槽隔离区域包括：（1）设置在多个深沟槽隔离区域的内表面上的氧化物层和（2）设置在多个深沟槽隔离区域中的导电填料，其中设置氧化物层 在半导体层和导电填料之间。 多个钉扎阱也设置在半导体层中，并且多个钉扎阱与多个深沟槽隔离区域组合分离多个光电二极管中的各个光电二极管。 固定电荷层设置在半导体层上，多个深沟槽隔离区设置在多个钉扎阱和固定电荷层之间。

公开(公告)号：US20160227147A1

公开(公告)日：2016-08-04

申请号：US14612961

申请日：2015-02-03

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Gang Chen ,  Dominic Massetti ,  Chih-Wei Hsiung ,  Arvind Kumar ,  Yuanwei Zheng ,  Duli Mao ,  Dyson H. Tai

IPC: H04N5/3745 ,  H04N5/378

CPC classification number: H04N9/045 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14647 ,  H04N5/37457

Abstract: A back side illuminated image sensor includes a pixel array including semiconductor material, and image sensor circuitry disposed on a front side of the semiconductor material to control operation of the pixel array. A first pixel includes a first doped region disposed proximate to a back side of the semiconductor material and extends into the semiconductor material a first depth to reach the image sensor circuitry. A second pixel with a second doped region is disposed proximate to the back side of the semiconductor material and extends into the semiconductor material a second depth which is less than the first depth. A third doped region is disposed between the second doped region and the image sensor circuitry front side of the semiconductor material. The third doped region is electrically isolated from the first doped region and the second doped region.

Abstract translation: 背面照明图像传感器包括包括半导体材料的像素阵列和设置在半导体材料的前侧上以控制像素阵列的操作的图像传感器电路。 第一像素包括靠近半导体材料的背面设置的第一掺杂区域，并延伸到半导体材料中以到达图像传感器电路的第一深度。 具有第二掺杂区域的第二像素设置在半导体材料的背面附近并且延伸到半导体材料中的比第一深度小的第二深度。 第三掺杂区域设置在第二掺杂区域和半导体材料的图像传感器电路正面之间。 第三掺杂区域与第一掺杂区域和第二掺杂区域电隔离。

公开(公告)号：US09455291B2

公开(公告)日：2016-09-27

申请号：US14601010

申请日：2015-01-20

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Gang Chen ,  Duli Mao ,  Yuanwei Zheng ,  Chih-Wei Hsiung ,  Arvind Kumar ,  Dyson H. Tai

IPC: H01L31/00 ,  H01L27/146

CPC classification number: H01L27/14621 ,  H01L27/14612 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14647

Abstract: A back side illuminated image sensor includes a semiconductor material having a front side and a back side. The semiconductor material is disposed between image sensor circuitry and a light filter array. The image sensor circuitry is disposed on the front side, and the light filter array is disposed proximate to the back side. The image sensor includes a first pixel with a first doped region that extends from the image sensor circuitry into the semiconductor material a first depth. The first pixel also includes a second doped region that is disposed between the back side of the semiconductor material and the first doped region. The second doped region is electrically isolated from the first doped region. A second pixel with a third doped region is also included in the image sensor. The third doped region extends from the image sensor circuitry into the semiconductor material a second depth.

Abstract translation: 背面照明图像传感器包括具有前侧和后侧的半导体材料。 半导体材料设置在图像传感器电路和滤光器阵列之间。 图像传感器电路设置在前侧，并且滤光器阵列靠近背面设置。 图像传感器包括具有第一掺杂区域的第一像素，其从图像传感器电路延伸到半导体材料第一深度。 第一像素还包括设置在半导体材料的背面和第一掺杂区之间的第二掺杂区域。 第二掺杂区域与第一掺杂区域电隔离。 具有第三掺杂区域的第二像素也包括在图像传感器中。 第三掺杂区域从图像传感器电路延伸到半导体材料第二深度。