公开(公告)号：US20210305299A1

公开(公告)日：2021-09-30

申请号：US16830086

申请日：2020-03-25

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Chiao-Ti Huang ,  Sing-Chung Hu ,  Yuanwei Zheng

IPC: H01L27/146

Abstract: Image sensors include a photodiode disposed in a semiconductor substrate and a transistor operatively coupled to the photodiode. The transistor includes a nonplanar structure disposed in the semiconductor substrate, which is bounded by two outer trench structures formed in the semiconductor substrate. Isolation deposits are disposed within the two outer trench structures formed in the semiconductor substrate. A gate includes a planar gate and two fingers extending into one of two inner trench structures formed in the semiconductor substrate between the nonplanar structure and a respective one of the two outer trench structures. This structure creates an electron channel extending along a plurality of sidewall portions of the nonplanar structure in a channel width plane.

公开(公告)号：US20230207587A1

公开(公告)日：2023-06-29

申请号：US18177494

申请日：2023-03-02

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Chiao-Ti Huang ,  Sing-Chung Hu ,  Yuanwei Zheng ,  Bill Phan

IPC: H01L27/146 ,  H01L29/66 ,  H01L21/762 ,  H01L29/423 ,  H01L29/78

CPC classification number: H01L27/14616 ,  H01L27/1463 ,  H01L27/14614 ,  H01L27/14643 ,  H01L29/66795 ,  H01L21/76224 ,  H01L29/42368 ,  H01L29/42376 ,  H01L29/4236 ,  H01L29/7856 ,  H01L27/14603 ,  H01L27/14641 ,  H01L29/7851

Abstract: An image sensor includes a photodiode disposed in a semiconductor substrate having a first surface and a second surface opposite to the first surface. A floating diffusion is disposed in the semiconductor substrate. A transfer transistor is configured for coupling the photodiode to the floating diffusion. The transfer transistor includes a vertical transfer gate extending a first depth in a depthwise direction from the first surface into the semiconductor substrate. A transistor is coupled to the floating diffusion. The transistor includes: a planar gate disposed proximate to the first surface of the semiconductor substrate; and a plurality of vertical gate electrodes, each extending a respective depth into the semiconductor substrate from the planar gate in the depthwise direction. The respective depth of at least one of the plurality of vertical gate electrodes is the same as the first depth of the vertical transfer gate.

公开(公告)号：US11121169B2

公开(公告)日：2021-09-14

申请号：US16452272

申请日：2019-06-25

Applicant: OmniVision Technologies, Inc.

Inventor： Chiao-Ti Huang ,  Shiyu Sun ,  Gang Chen

IPC: H01L27/146 ,  H01L21/28

Abstract: A method for manufacturing an image sensor includes, for each of a plurality of photosensitive pixels of the image sensor, forming a trench in a semiconductor substrate of the image sensor, and depositing temporary transfer gate material in and above the trench. The method further includes, after the step of depositing temporary transfer gate material, high-temperature annealing at least a portion of the semiconductor substrate. In addition, the method includes, after the step of high-temperature annealing, (a) removing the temporary transfer gate material, thereby reopening the trench, (b) depositing a passivation lining, having a high-k dielectric, in the reopened trench, and (c) depositing metal on the high-k dielectric passivation lining to form a metal vertical transfer gate in the trench and extending above the trench.

公开(公告)号：US12289924B2

公开(公告)日：2025-04-29

申请号：US18177494

申请日：2023-03-02

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Chiao-Ti Huang ,  Sing-Chung Hu ,  Yuanwei Zheng ,  Bill Phan

IPC: H10F39/18 ,  H01L21/762 ,  H10D30/01 ,  H10D30/62 ,  H10D64/27 ,  H10F39/00

Abstract: An image sensor includes a photodiode disposed in a semiconductor substrate having a first surface and a second surface opposite to the first surface. A floating diffusion is disposed in the semiconductor substrate. A transfer transistor is configured for coupling the photodiode to the floating diffusion. The transfer transistor includes a vertical transfer gate extending a first depth in a depthwise direction from the first surface into the semiconductor substrate. A transistor is coupled to the floating diffusion. The transistor includes: a planar gate disposed proximate to the first surface of the semiconductor substrate; and a plurality of vertical gate electrodes, each extending a respective depth into the semiconductor substrate from the planar gate in the depthwise direction. The respective depth of at least one of the plurality of vertical gate electrodes is the same as the first depth of the vertical transfer gate.