公开(公告)号：US09564566B2

公开(公告)日：2017-02-07

申请号：US14909850

申请日：2014-08-05

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Patrick Kromotis ,  Emanuel Hofmann ,  Ludwig Peyker ,  Torsten Baade ,  Simone Kiener ,  Kristin Grosse

IPC: H01L33/62 ,  H01L23/31 ,  H01L33/44 ,  H01L33/56 ,  H01L23/24

CPC classification number: H01L33/62 ,  H01L23/24 ,  H01L23/3135 ,  H01L33/44 ,  H01L33/56 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2224/8592 ,  H01L2924/181 ,  H01L2933/005 ,  H01L2933/0066 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/00

Abstract: An optoelectronic component includes a housing having an electrically conductive first contact section, and an optoelectronic semiconductor chip arranged on the first contact section, wherein the optoelectronic semiconductor chip and the first contact section are at least partly covered by a first layer including a silicone, a second layer including SiO2 is arranged at a surface of the first layer, the second layer has a thickness of 10 nm to 1 μm, and a third layer is arranged above the second layer.

Abstract translation: 光电子部件包括具有导电的第一接触部分的壳体和布置在第一接触部分上的光电子半导体芯片，其中光电子半导体芯片和第一接触部分至少部分被第一层覆盖，第一层包括硅树脂， 第二层包括SiO 2布置在第一层的表面，第二层的厚度为10nm至1μm，第三层布置在第二层的上方。

公开(公告)号：US20160190410A1

公开(公告)日：2016-06-30

申请号：US14909850

申请日：2014-08-05

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Patrick Kromotis ,  Emanuel Hofmann ,  Ludwig Peyker ,  Torsten Baade ,  Simone Kiener ,  Kristin Grosse

IPC: H01L33/62 ,  H01L33/56

CPC classification number: H01L33/62 ,  H01L23/24 ,  H01L23/3135 ,  H01L33/44 ,  H01L33/56 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2224/8592 ,  H01L2924/181 ,  H01L2933/005 ,  H01L2933/0066 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/00

Abstract: An optoelectronic component includes a housing having an electrically conductive first contact section, and an optoelectronic semiconductor chip arranged on the first contact section, wherein the optoelectronic semiconductor chip and the first contact section are at least partly covered by a first layer including a silicone, a second layer including SiO2 is arranged at a surface of the first layer, the second layer has a thickness of 10 nm to 1 μm, and a third layer is arranged above the second layer.

Abstract translation: 光电子部件包括具有导电的第一接触部分的壳体和布置在第一接触部分上的光电子半导体芯片，其中光电子半导体芯片和第一接触部分至少部分被第一层覆盖，第一层包括硅树脂， 第二层包括SiO 2布置在第一层的表面，第二层的厚度为10nm至1μm，第三层布置在第二层的上方。