公开(公告)号：US20160282271A1

公开(公告)日：2016-09-29

申请号：US15030553

申请日：2014-11-14

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Jens EBBECKE ,  Siegmar KUGLER ,  Tobias MEYER ,  Matthias PETER

IPC: G01N21/64 ,  G01N21/88 ,  G01N21/95

CPC classification number: G01N21/6489 ,  G01N21/8851 ,  G01N21/9501 ,  G01N2021/646 ,  G01R31/2635 ,  H01L33/0095

Abstract: A method is provided for a full-area optical characterization of an optoelectronic semiconductor material which is provided for producing a plurality of optoelectronic semiconductor chips and which has a band gap which specifies a characteristic wavelength of the semiconductor material. The method includes full-area irradiating a major surface of the optoelectronic semiconductor material with light having an excitation wavelength which is less than the characteristic wavelength of the semiconductor material, with the full-area irradiating generating electron-hole pairs in the semiconductor material. The method further includes full-area detecting a recombination radiation having the characteristic wavelength which is emitted as a result of recombination of the electron-hole pairs from the major surface of the semiconductor material. A device for carrying out the method is also provided.

Abstract translation: 提供了一种用于光电子半导体材料的全面光学表征的方法，该光电半导体材料被提供用于制造多个光电子半导体芯片，并且具有指定半导体材料的特征波长的带隙。 该方法包括在半导体材料中的全面照射产生电子 - 空穴对的情况下，利用具有小于半导体材料的特征波长的激发波长的光全光照射光电半导体材料的主表面。 该方法还包括全面检测具有由于半导体材料的主表面的电子 - 空穴对的复合而发射的特征波长的复合辐射。 还提供了一种用于执行该方法的装置。