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    Method for the Optical Characterization of an Optoelectronic Semiconductor Material and Device for Carrying Out the Method
    1.
    发明申请
    Method for the Optical Characterization of an Optoelectronic Semiconductor Material and Device for Carrying Out the Method 审中-公开
    用于光电半导体材料的光学表征的方法和用于实施该方法的装置

    公开(公告)号：US20160282271A1

    公开(公告)日：2016-09-29

    申请号：US15030553

    申请日：2014-11-14

    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

    Inventor： Jens EBBECKE ,  Siegmar KUGLER ,  Tobias MEYER ,  Matthias PETER

    IPC: G01N21/64 ,  G01N21/88 ,  G01N21/95

    CPC classification number: G01N21/6489 ,  G01N21/8851 ,  G01N21/9501 ,  G01N2021/646 ,  G01R31/2635 ,  H01L33/0095

    Abstract: A method is provided for a full-area optical characterization of an optoelectronic semiconductor material which is provided for producing a plurality of optoelectronic semiconductor chips and which has a band gap which specifies a characteristic wavelength of the semiconductor material. The method includes full-area irradiating a major surface of the optoelectronic semiconductor material with light having an excitation wavelength which is less than the characteristic wavelength of the semiconductor material, with the full-area irradiating generating electron-hole pairs in the semiconductor material. The method further includes full-area detecting a recombination radiation having the characteristic wavelength which is emitted as a result of recombination of the electron-hole pairs from the major surface of the semiconductor material. A device for carrying out the method is also provided.

    Abstract translation: 提供了一种用于光电子半导体材料的全面光学表征的方法，该光电半导体材料被提供用于制造多个光电子半导体芯片，并且具有指定半导体材料的特征波长的带隙。 该方法包括在半导体材料中的全面照射产生电子 - 空穴对的情况下，利用具有小于半导体材料的特征波长的激发波长的光全光照射光电半导体材料的主表面。 该方法还包括全面检测具有由于半导体材料的主表面的电子 - 空穴对的复合而发射的特征波长的复合辐射。 还提供了一种用于执行该方法的装置。

    METHOD FOR THE PRODUCTION OF A NITRIDE COMPOUND SEMICONDUCTOR LAYER
    2.
    发明申请
    METHOD FOR THE PRODUCTION OF A NITRIDE COMPOUND SEMICONDUCTOR LAYER 有权
    制备氮化物半导体层的方法

    公开(公告)号：US20170053795A1

    公开(公告)日：2017-02-23

    申请号：US15119703

    申请日：2015-02-12

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Juergen OFF ,  Matthias PETER ,  Thomas LEHNHARDT ,  Werner BERGBAUER

    IPC: H01L21/02 ,  C30B29/40 ,  C30B25/18

    CPC classification number: H01L21/0254 ,  C30B25/183 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02645 ,  H01L21/02658

    Abstract: Described is a method for producing a nitride compound semiconductor layer, involving the steps of:—depositing a first seed layer (1) comprising a nitride compound semiconductor material on a substrate (10);—desorbing at least some of the nitride compound semiconductor material in the first seed layer from the substrate (10);—depositing a second seed layer (2) comprising a nitride compound semiconductor material; and—growing the nitride compound semiconductor layer (3) containing a nitride compound semiconductor material onto the second seed layer (2).

    Abstract translation: 描述了一种用于生产氮化物化合物半导体层的方法，包括以下步骤：在衬底（10）上沉积包含氮化物化合物半导体材料的第一晶种层（1）; - 将至少一些氮化物半导体材料 在来自所述衬底（10）的所述第一晶种层中; - 沉积包含氮化物半导体材料的第二晶种层（2）; 并且将含有氮化物化合物半导体材料的氮化物化合物半导体层（3）生长到第二籽晶层（2）上。

    COMPONENT HAVING A MULTIPLE QUANTUM WELL STRUCTURE
    4.
    发明申请
    COMPONENT HAVING A MULTIPLE QUANTUM WELL STRUCTURE 审中-公开

    公开(公告)号：US20180083160A1

    公开(公告)日：2018-03-22

    申请号：US15559409

    申请日：2016-03-01

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Tobias MEYER ,  Thomas LEHNHARDT ,  Matthias PETER ,  Asako HIRAI ,  Juergen OFF ,  Philipp DRECHSEL ,  Peter STAUSS

    IPC: H01L33/06 ,  H01S5/22 ,  H01S5/30 ,  H01S5/34 ,  H01S5/32

    CPC classification number: H01L33/06 ,  H01L33/32 ,  H01S5/2228 ,  H01S5/309 ,  H01S5/3216 ,  H01S5/34

    Abstract: The invention relates to a component (10) having a semiconductor layer sequence, which has a p-conducting semiconductor layer (1), an n-conducting semiconductor layer (2), and an active zone (3) arranged between the p-conducting semiconductor layer and the n-conducting semiconductor layer, wherein the active zone has a multiple quantum well structure, which, from the p-conducting semiconductor layer to the n-conducting semiconductor layer, has a plurality of p-side barrier layers (32p) having intermediate quantum well layers (31) and a plurality of n-side barrier layers (32n) having intermediate quantum layers (31). Recesses (4) having flanks are formed in the semiconductor layer sequence on the part of the p-conducting semiconductor layer, wherein the quantum well layers and/or the n- and p-side barrier layers extend in a manner conforming to the flanks of the recesses at least in regions. The interior barrier layers have a larger average layer thickness than the p-side barrier layers.

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