公开(公告)号：US20230378715A1

公开(公告)日：2023-11-23

申请号：US18044416

申请日：2021-08-26

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Jens EBBECKE

IPC: H01S5/00 ,  H01S5/10 ,  H01S5/028 ,  G01N21/41

CPC classification number: H01S5/0028 ,  H01S5/1071 ,  H01S5/028 ,  G01N21/41 ,  H01S5/0282

Abstract: In at least one embodiment, the environment sensor for sensing at least one environment parameter includes a semiconductor layer sequence, a sheath, the index of refraction of which changes as a function of the environment parameter, and a first electrical contact and a second electrical contact for supplying current to the semiconductor layer sequence. The semiconductor layer sequence has the shape of a generalized cylinder having a main axis. In directions perpendicular to the main axis, the semiconductor layer sequence is at least partly covered by the sheath. The semiconductor layer sequence has an index of refraction which is greater than the index of refraction of the sheath. The semiconductor layer sequence is designed to form laser modes within the environment sensor. Furthermore, the environment sensor is designed such that, in its normal operation, a change in the index of refraction of the sheath causes a change in the electrical resistance of the semiconductor layer sequence as a result of a change in radiation losses within the semiconductor layer sequence.

公开(公告)号：US20220123529A1

公开(公告)日：2022-04-21

申请号：US17430658

申请日：2020-01-16

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Jens EBBECKE

IPC: H01S5/40 ,  H01S5/024 ,  H01S5/028

Abstract: The invention relates to an edge emitting laser diode comprising a semiconductor layer stack whose growth direction defines a vertical direction, and wherein the semiconductor layer stack comprises an active layer and a waveguide layer. A thermal stress element is arranged in at least indirect contact with the semiconductor layer stack, the thermal stress element being configured to generate a thermally induced mechanical stress in the waveguide layer that counteracts the formation of a thermal lens.

公开(公告)号：US20210408764A1

公开(公告)日：2021-12-30

申请号：US17291083

申请日：2019-10-30

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Jens EBBECKE

IPC: H01S5/10 ,  H01S5/125 ,  H01S5/12

Abstract: The invention relates to laser diode for generating laser radiation of at least two frequencies, comprising: a semiconductor body having a ridge waveguide; a DFB structure or DBR structure in the ridge waveguide; and a piezoelectric element for producing mechanical stress in the ridge waveguide, which piezoelectric element is arranged on the ridge waveguide. The invention further relates to a method for producing laser radiation of at least two frequencies by means of the laser diode.

公开(公告)号：US20160282271A1

公开(公告)日：2016-09-29

申请号：US15030553

申请日：2014-11-14

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Jens EBBECKE ,  Siegmar KUGLER ,  Tobias MEYER ,  Matthias PETER

IPC: G01N21/64 ,  G01N21/88 ,  G01N21/95

CPC classification number: G01N21/6489 ,  G01N21/8851 ,  G01N21/9501 ,  G01N2021/646 ,  G01R31/2635 ,  H01L33/0095

Abstract: A method is provided for a full-area optical characterization of an optoelectronic semiconductor material which is provided for producing a plurality of optoelectronic semiconductor chips and which has a band gap which specifies a characteristic wavelength of the semiconductor material. The method includes full-area irradiating a major surface of the optoelectronic semiconductor material with light having an excitation wavelength which is less than the characteristic wavelength of the semiconductor material, with the full-area irradiating generating electron-hole pairs in the semiconductor material. The method further includes full-area detecting a recombination radiation having the characteristic wavelength which is emitted as a result of recombination of the electron-hole pairs from the major surface of the semiconductor material. A device for carrying out the method is also provided.

Abstract translation: 提供了一种用于光电子半导体材料的全面光学表征的方法，该光电半导体材料被提供用于制造多个光电子半导体芯片，并且具有指定半导体材料的特征波长的带隙。 该方法包括在半导体材料中的全面照射产生电子 - 空穴对的情况下，利用具有小于半导体材料的特征波长的激发波长的光全光照射光电半导体材料的主表面。 该方法还包括全面检测具有由于半导体材料的主表面的电子 - 空穴对的复合而发射的特征波长的复合辐射。 还提供了一种用于执行该方法的装置。

公开(公告)号：US20220093821A1

公开(公告)日：2022-03-24

申请号：US17421735

申请日：2019-12-19

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Jens EBBECKE

IPC: H01L33/04 ,  H01L33/10

Abstract: An optoelectronic semiconductor element may emit electromagnetic radiation. The optoelectronic semiconductor element may include a semiconductor body and a reflective lattice structure directly adjacent to a first main surface of the semiconductor body. The reflective lattice structure may be made of layer portions periodically arranged in the horizontal direction. The first main surface may be different from an exit surface of the electromagnetic radiation.