公开(公告)号：US20150050765A1

公开(公告)日：2015-02-19

申请号：US14460856

申请日：2014-08-15

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Bernd Böhm ,  Sebastian Hoibl

IPC: H01L21/033 ,  H01L33/00

CPC classification number: H01L21/0338 ,  H01L21/0274 ,  H01L33/005 ,  H01L33/20 ,  H01L33/22

Abstract: A photolithographic method which produces a structure in a radiation-emitting semiconductor component by providing a semiconductor wafer having a semiconductor layer sequence, applying a first photoresist layer to the semiconductor wafer, providing a mask, and arranging the mask relative to the coated semiconductor wafer, exposing the first photoresist layer and imaging the mask in the first photoresist layer, arranging the mask or a different mask relative to the semiconductor wafer at another position different from a first position and again exposing the first photoresist layer and imaging the mask in the first photoresist layer or applying a second photoresist layer to the first photoresist layer, arranging the mask or a different mask relative to the semiconductor wafer at a second position, and exposing the second photoresist layer and imaging the mask in the second photoresist layer, forming a patterned photoresist layer and patterning the semiconductor wafer.

Abstract translation: 一种通过提供具有半导体层序列的半导体晶片产生辐射发射半导体部件中的结构的光刻方法，向半导体晶片施加第一光致抗蚀剂层，提供掩模，并且相对于被覆半导体晶片布置掩模， 暴露第一光致抗蚀剂层并对第一光致抗蚀剂层中的掩模进行成像，在不同于第一位置的另一位置处布置掩模或相对于半导体晶片的不同掩模，并再次暴露第一光致抗蚀剂层并在第一光致抗蚀剂中成像掩模 层或将第二光致抗蚀剂层施加到第一光致抗蚀剂层，在第二位置处布置掩模或相对于半导体晶片的不同掩模，并且曝光第二光致抗蚀剂层并在第二光致抗蚀剂层中成像掩模，形成图案化的光致抗蚀剂 层并且图案化半导体晶片。

公开(公告)号：US20170271438A1

公开(公告)日：2017-09-21

申请号：US15614917

申请日：2017-06-06

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Ewald Karl Michael Günther ,  Andreas Plössl ,  Heribert Zull ,  Thomas Veit ,  Mathias Kämpf ,  Jens Dennemarck ,  Bernd Böhm ,  Korbinian Perzlmaier

IPC: H01L29/06 ,  H01L25/16 ,  H01L29/66 ,  H01L27/02 ,  H01L27/14 ,  H01L27/15 ,  H01L33/00 ,  H01L33/64 ,  H01L33/38 ,  H01L23/60

CPC classification number: H01L29/0607 ,  H01L23/60 ,  H01L25/167 ,  H01L27/0248 ,  H01L27/14 ,  H01L27/15 ,  H01L29/66128 ,  H01L33/0079 ,  H01L33/382 ,  H01L33/641 ,  H01L2224/48247 ,  H01L2224/49107 ,  H01L2224/73265

Abstract: A method of producing a plurality of semiconductor chips includes a) providing a carrier substrate having a first major face and a second major face opposite the first major face; b) forming a diode structure between the first major face and the second major face, the diode structure electrically insulating the first major face from the second major face at least with regard to one polarity of an electrical voltage; c) arranging a semiconductor layer sequence on the first major face of the carrier substrate; and d) singulating the carrier substrate with the semiconductor layer sequence into a plurality of semiconductor chips.

公开(公告)号：US10224393B2

公开(公告)日：2019-03-05

申请号：US15614917

申请日：2017-06-06

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Ewald Karl Michael Günther ,  Andreas Plöβl ,  Heribert Zull ,  Thomas Veit ,  Mathias Kämpf ,  Jens Dennemarck ,  Bernd Böhm ,  Korbinian Perzlmaier

IPC: H01L23/60 ,  H01L25/16 ,  H01L27/02 ,  H01L27/14 ,  H01L27/15 ,  H01L29/06 ,  H01L29/66 ,  H01L33/00 ,  H01L33/38 ,  H01L33/64

Abstract: A method of producing a plurality of semiconductor chips includes a) providing a carrier substrate having a first major face and a second major face opposite the first major face; b) forming a diode structure between the first major face and the second major face, the diode structure electrically insulating the first major face from the second major face at least with regard to one polarity of an electrical voltage; c) arranging a semiconductor layer sequence on the first major face of the carrier substrate; and d) singulating the carrier substrate with the semiconductor layer sequence into a plurality of semiconductor chips.

公开(公告)号：US09466487B2

公开(公告)日：2016-10-11

申请号：US14460856

申请日：2014-08-15

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Bernd Böhm ,  Sebastian Hoibl

IPC: H01L21/033 ,  H01L33/00 ,  H01L33/22 ,  H01L33/20 ,  H01L21/027

CPC classification number: H01L21/0338 ,  H01L21/0274 ,  H01L33/005 ,  H01L33/20 ,  H01L33/22

Abstract: A photolithographic method which produces a structure in a radiation-emitting semiconductor component by providing a semiconductor wafer having a semiconductor layer sequence, applying a first photoresist layer to the semiconductor wafer, providing a mask, and arranging the mask relative to the coated semiconductor wafer, exposing the first photoresist layer and imaging the mask in the first photoresist layer, arranging the mask or a different mask relative to the semiconductor wafer at another position different from a first position and again exposing the first photoresist layer and imaging the mask in the first photoresist layer or applying a second photoresist layer to the first photoresist layer, arranging the mask or a different mask relative to the semiconductor wafer at a second position, and exposing the second photoresist layer and imaging the mask in the second photoresist layer, forming a patterned photoresist layer and patterning the semiconductor wafer.

Abstract translation: 一种通过提供具有半导体层序列的半导体晶片产生辐射发射半导体部件中的结构的光刻方法，向半导体晶片施加第一光致抗蚀剂层，提供掩模，并且相对于被覆半导体晶片布置掩模， 暴露第一光致抗蚀剂层并对第一光致抗蚀剂层中的掩模进行成像，在不同于第一位置的另一位置处布置掩模或相对于半导体晶片的不同掩模，并再次暴露第一光致抗蚀剂层并在第一光致抗蚀剂中成像掩模 层或将第二光致抗蚀剂层施加到第一光致抗蚀剂层，在第二位置处布置掩模或相对于半导体晶片的不同掩模，并且曝光第二光致抗蚀剂层并在第二光致抗蚀剂层中成像掩模，形成图案化的光致抗蚀剂 层并且图案化半导体晶片。