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公开(公告)号:US20180166611A1
公开(公告)日:2018-06-14
申请号:US15577837
申请日:2016-05-27
Applicant: OSRAM Opto Semiconductors GmbH
Inventor: Tilman Ruegheimer , Juergen Dachs
CPC classification number: H01L33/486 , H01L21/4817 , H01L33/483 , H01L2224/48091 , H01L2933/0033 , H01L2933/0058 , H01S5/0206 , H01S5/0216 , H01S5/02216 , H01S5/02272 , H01L2924/00014
Abstract: A method of producing a housing cover includes providing a cover blank having a mounting surface formed on an underside; connecting the underside of the cover blank to a silicon slice; creating at least one opening in the silicon slice to expose at least part of the mounting surface; arranging a base metallization on the exposed part of the mounting surface; and removing the silicon slice.
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公开(公告)号:US10741996B2
公开(公告)日:2020-08-11
申请号:US15765706
申请日:2016-09-29
Applicant: OSRAM Opto Semiconductors GmbH
Inventor: Frank Singer , Norwin Von Malm , Tilman Ruegheimer , Thomas Kippes
Abstract: In one embodiment of the invention, the semiconductor laser (1) comprises a semiconductor layer sequence (2). The semiconductor layer sequence (2) contains an n-type region (23), a p-type region (21) and an active zone (22) lying between the two. A laser beam is produced in a resonator path (3). The resonator path (3) is aligned parallel to the active zone (22). In addition, the semiconductor laser (1) contains an electrical p-contact (41) and an electrical n-contact (43) each of which is located on the associated region (21, 23) of the semiconductor layer sequence (2) and is configured to input current directly into the associated region (21, 23). A p-contact surface (61) is electrically connected to the p-contact (41), and an n-contact surface (63) is electrically connected to the n-contact (43) such that the p-contact surface (61) and the n-contact surface (63) are configured for external electrical and mechanical connection of the semiconductor laser (1). The contact surfaces (61, 63) are oriented parallel to a growth direction (G) of the semiconductor layer sequence (2). The semiconductor laser (1) can be surface-mounted without wires.
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公开(公告)号:US20180322825A1
公开(公告)日:2018-11-08
申请号:US16033419
申请日:2018-07-12
Applicant: OSRAM Opto Semiconductors GmbH
Inventor: Stefan Illek , Norwin von Malm , Tilman Ruegheimer
IPC: G09G3/3208 , H01L25/075 , G09G3/32
CPC classification number: G09G3/3208 , G09G3/32 , H01L25/0753
Abstract: A display device is disclosed. In an embodiment a display device includes at least one connection carrier comprising a multiplicity of switches and a multiplicity of light-emitting diode chips, wherein each light-emitting diode chip is mechanically fixed and electrically connected to the connection carrier, wherein each switch is designed for driving at least one light-emitting diode chip, and wherein the light-emitting diode chips are imaging elements of the display device.
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公开(公告)号:US11480723B2
公开(公告)日:2022-10-25
申请号:US17475030
申请日:2021-09-14
Applicant: OSRAM Opto Semiconductors GmbH
Inventor: Peter Brick , Jean-Jacques Drolet , Hubert Halbritter , Laura Kreiner , Thomas Schwarz , Tilman Ruegheimer , Frank Singer
IPC: F21V8/00 , G02B27/01 , H01L25/075
Abstract: The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.
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公开(公告)号:US11156759B2
公开(公告)日:2021-10-26
申请号:US17039422
申请日:2020-09-30
Applicant: OSRAM Opto Semiconductors GmbH
Inventor: Peter Brick , Jean-Jacques Drolet , Hubert Halbritter , Laura Kreiner , Thomas Schwarz , Tilman Ruegheimer , Frank Singer
IPC: F21V8/00 , G02B27/01 , H01L25/075
Abstract: The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.
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公开(公告)号:US10177285B2
公开(公告)日:2019-01-08
申请号:US15577837
申请日:2016-05-27
Applicant: OSRAM Opto Semiconductors GmbH
Inventor: Tilman Ruegheimer , Juergen Dachs
Abstract: A method of producing a housing cover includes providing a cover blank having a mounting surface formed on an underside; connecting the underside of the cover blank to a silicon slice; creating at least one opening in the silicon slice to expose at least part of the mounting surface; arranging a base metallization on the exposed part of the mounting surface; and removing the silicon slice.
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公开(公告)号:US11513275B2
公开(公告)日:2022-11-29
申请号:US17474975
申请日:2021-09-14
Applicant: OSRAM Opto Semiconductors GmbH
Inventor: Peter Brick , Jean-Jacques Drolet , Hubert Halbritter , Laura Kreiner , Thomas Schwarz , Tilman Ruegheimer , Frank Singer
IPC: F21V8/00 , G02B27/01 , H01L25/075
Abstract: The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.
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公开(公告)号:US10554019B2
公开(公告)日:2020-02-04
申请号:US15765997
申请日:2016-09-29
Applicant: OSRAM Opto Semiconductors GmbH
Inventor: Frank Singer , Norwin Von Malm , Tilman Ruegheimer , Thomas Kippes
IPC: H01S5/227 , H01S5/02 , H01S5/022 , H01S5/042 , H01L23/00 , H01S5/024 , H01S5/323 , H01S5/22 , H01L21/56
Abstract: In one embodiment of the invention, the semiconductor laser (1) comprises a semiconductor layer sequence (2). The semiconductor layer sequence (2) contains an n-type region (23), a p-type region (21) and an active zone (22) lying between the two. A laser beam is produced in a resonator path (3). The resonator path (3) is aligned parallel to the active zone (22). In addition, the semiconductor laser (1) contains an electrical p-contact (41) and an electrical n-contact (43) each of which is located on the associated region (21, 23) of the semiconductor layer sequence (2) and is configured to input current directly into the associated region (21, 23). The n-contact (43) extends from the p-type region (21) through the active zone (22) and into the n-type region (23) and is located, when viewed from above, next to the resonator path (3).
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