公开(公告)号：US09997671B2

公开(公告)日：2018-06-12

申请号：US14739684

申请日：2015-06-15

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Johannes Baur ,  Berthold Hahn ,  Volker Haerle ,  Karl Engl ,  Joachim Hertkorn ,  Tetsuya Taki

IPC: H01L33/32 ,  H01L33/50 ,  H01L33/00 ,  H01L33/08 ,  H01L21/02 ,  H01L21/78 ,  H01L29/02 ,  H01L33/46 ,  H01L23/00

CPC classification number: H01L33/32 ,  H01L21/02612 ,  H01L21/78 ,  H01L24/73 ,  H01L29/02 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/46 ,  H01L33/507 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/00012 ,  H01L2924/00014

Abstract: A composite substrate has a carrier and a utility layer. The utility layer is attached to the carrier by means of a dielectric bonding layer and the carrier contains a radiation conversion material. Other embodiments relate to a semiconductor chip having such a composite substrate, a method for producing a composite substrate and a method for producing a semiconductor chip with a composite substrate.

公开(公告)号：US20150287883A1

公开(公告)日：2015-10-08

申请号：US14739684

申请日：2015-06-15

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Johannes Baur ,  Berthold Hahn ,  Volker Haerle ,  Karl Engl ,  Joachim Hertkorn ,  Tetsuya Taki

IPC: H01L33/32 ,  H01L33/46 ,  H01L33/50

CPC classification number: H01L33/32 ,  H01L21/02612 ,  H01L21/78 ,  H01L24/73 ,  H01L29/02 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/46 ,  H01L33/507 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/00012 ,  H01L2924/00014

Abstract: A composite substrate has a carrier and a utility layer. The utility layer is attached to the carrier by means of a dielectric bonding layer and the carrier contains a radiation conversion material. Other embodiments relate to a semiconductor chip having such a composite substrate, a method for producing a composite substrate and a method for producing a semiconductor chip with a composite substrate.

Abstract translation: 复合衬底具有载体和效用层。 实用层通过介电粘合层附着到载体上，载体包含辐射转换材料。 其他实施方式涉及具有这种复合基板的半导体芯片，复合基板的制造方法以及具有复合基板的半导体芯片的制造方法。