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1.发明授权公开(公告)号：US09530935B2
公开(公告)日：2016-12-27
申请号：US14418916
申请日：2013-07-18
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Wolfgang Neumann
CPC classification number: H01L33/382 , H01L33/0079 , H01L33/20 , H01L33/405 , H01L33/60 , H01L2924/0002 , H01L2933/0016 , H01L2933/0025 , H01L2933/0033 , H01L2924/00
Abstract: A method for fabricating optoelectronic semiconductor chips and optoelectronic semiconductor chips are disclosed. In embodiments the method comprises depositing a semiconductor layer sequence having an active, the active region being arranged between a first semiconductor layer and a second semiconductor layer on a growth substrate, attaching the semiconductor layer sequence to a carrier and forming a plurality of recesses extending through the carrier, the second semiconductor layer and the active region into the first semiconductor layer. The method further comprises forming first contacts on a first main surface of the carrier, the first main surface facing away from the semiconductor layer sequence, wherein the first contacts are electrically conductively connected to the first semiconductor layer in the region of the recesses and singulating the carrier and the semiconductor layer sequence into the plurality of optoelectronic semiconductor chips, wherein each semiconductor chip has at least one recess.
Abstract translation: 公开了一种制造光电子半导体芯片和光电子半导体芯片的方法。 在实施例中，该方法包括沉积半导体层序列，该半导体层序列具有有源区，该有源区布置在生长衬底上的第一半导体层和第二半导体层之间，将半导体层序列附着到载体上并形成多个延伸穿过的凹槽 载体，第二半导体层和有源区进入第一半导体层。 所述方法还包括在所述载体的第一主表面上形成第一触点，所述第一主表面背离所述半导体层序列，其中所述第一触点在所述凹部的区域中导电连接到所述第一半导体层， 载体和半导体层序列到多个光电半导体芯片中，其中每个半导体芯片具有至少一个凹部。
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2.发明申请公开(公告)号：US20150270446A1
公开(公告)日：2015-09-24
申请号：US14418916
申请日：2013-07-18
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Wolfgang Neumann
CPC classification number: H01L33/382 , H01L33/0079 , H01L33/20 , H01L33/405 , H01L33/60 , H01L2924/0002 , H01L2933/0016 , H01L2933/0025 , H01L2933/0033 , H01L2924/00
Abstract: A method for fabricating optoelectronic semiconductor chips and optoelectronic semiconductor chips are disclosed. In embodiments the method comprises depositing a semiconductor layer sequence having an active, the active region being arranged between a first semiconductor layer and a second semiconductor layer on a growth substrate, attaching the semiconductor layer sequence to a carrier and forming a plurality of recesses extending through the carrier, the second semiconductor layer and the active region into the first semiconductor layer. The method further comprises forming first contacts on a first main surface of the carrier, the first main surface facing away from the semiconductor layer sequence, wherein the first contacts are electrically conductively connected to the first semiconductor layer in the region of the recesses and singulating the carrier and the semiconductor layer sequence into the plurality of optoelectronic semiconductor chips, wherein each semiconductor chip has at least one recess.
Abstract translation: 公开了一种制造光电子半导体芯片和光电子半导体芯片的方法。 在实施例中，该方法包括沉积半导体层序列，该半导体层序列具有有源区，该有源区布置在生长衬底上的第一半导体层和第二半导体层之间，将半导体层序列附着到载体上并形成多个延伸穿过的凹槽 载体，第二半导体层和有源区进入第一半导体层。 所述方法还包括在所述载体的第一主表面上形成第一触点，所述第一主表面背离所述半导体层序列，其中所述第一触点在所述凹部的区域中导电连接到所述第一半导体层， 载体和半导体层序列到多个光电半导体芯片中，其中每个半导体芯片具有至少一个凹部。
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公开(公告)号：US11158991B2
公开(公告)日：2021-10-26
申请号：US16495193
申请日：2018-05-09
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Wolfgang Neumann , Jörn Kampmeier
IPC: H01S5/022 , H01L33/48 , H01S5/02216 , H01S5/02257
Abstract: A cover for an optoelectronic component includes a body of a first material, the body includes a lower side and, starting from the lower side, a recess for the optoelectronic component, the body includes a side surface adjacent to the lower side, the recess is continued as far as the side surface, a plate of a second material is arranged on the side surface, the second material being transparent for a radiation wavelength of the optoelectronic component, and the body and the plate are connected.
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