公开(公告)号：US10418238B2

公开(公告)日：2019-09-17

申请号：US15978606

申请日：2018-05-14

Applicant: Ohio State Innovation Foundation

Inventor： Ronald M. Reano ,  Michael Wood ,  Ryan Patton

IPC: G02F1/295 ,  H01L21/02 ,  H01L31/0232 ,  G02B6/12 ,  G02F1/025 ,  G02B6/122 ,  G02B6/42 ,  G02F1/01 ,  G02F1/313

Abstract: Amorphous silicon devices, systems, and related methods are described herein. An example method for fabricating a thin film with light-emitting or light-detecting capability can include depositing a thin film of amorphous silicon on a wafer such that crystalline defects are distributed throughout the thin film. Additionally, an example photonic device can include a p-doped region and an n-doped region formed on a wafer, and a resonator structure formed on the wafer. The resonator structure can be formed from amorphous silicon and can be arranged between the p-doped and n-doped regions to form a PIN junction. Optionally, the photonic device can be incorporated into a monolithic integrated optical system.

公开(公告)号：US20180330946A1

公开(公告)日：2018-11-15

申请号：US15978606

申请日：2018-05-14

Applicant: Ohio State Innovation Foundation

Inventor： Ronald M. Reano ,  Michael Wood ,  Ryan Patton

IPC: H01L21/02 ,  H01L31/0232 ,  G02B6/12 ,  G02B6/122 ,  G02B6/42 ,  G02F1/01 ,  G02F1/313 ,  G02F1/025

CPC classification number: H01L21/02238 ,  G02B6/12004 ,  G02B6/12009 ,  G02B6/1223 ,  G02B6/1225 ,  G02B6/42 ,  G02B2006/12061 ,  G02B2006/12123 ,  G02B2006/12138 ,  G02B2006/12178 ,  G02F1/0136 ,  G02F1/025 ,  G02F1/313 ,  H01L21/02252 ,  H01L31/0232

Abstract: Amorphous silicon devices, systems, and related methods are described herein. An example method for fabricating a thin film with light-emitting or light-detecting capability can include depositing a thin film of amorphous silicon on a wafer such that crystalline defects are distributed throughout the thin film. Additionally, an example photonic device can include a p-doped region and an n-doped region formed on a wafer, and a resonator structure formed on the wafer. The resonator structure can be formed from amorphous silicon and can be arranged between the p-doped and n-doped regions to form a PIN junction. Optionally, the photonic device can be incorporated into a monolithic integrated optical system.