公开(公告)号：US10279540B2

公开(公告)日：2019-05-07

申请号：US15120399

申请日：2015-02-20

Applicant: Okinawa Institute of Science and Technology School Corporation

Inventor： Jeong-Hwan Kim ,  Murtaza Bohra ,  Vidya Dhar Singh ,  Antony Douglas Galea ,  Panagiotis Grammatikopoulos ,  Mukhles Ibrahim Sowwan

IPC: B29C37/00 ,  B29C61/06 ,  B29K79/00 ,  C23C14/00

Abstract: A two-dimensional nano-sheet that is foldable in response to a surrounding pH value includes a polyethyleneimine (PEI) chain taking a two-dimensional form; and a plurality of domains made of gold, attached to the PEI chain, the plurality of domains of gold forming a percolating gold film on the PEI chain.

公开(公告)号：US10828622B2

公开(公告)日：2020-11-10

申请号：US15736721

申请日：2016-06-28

Applicant: Okinawa Institute of Science and Technology School Corporation

Inventor： Mukhles Ibrahim Sowwan ,  Cathal Cassidy ,  Vidya Dhar Singh

IPC: B01J37/34 ,  B01J23/44 ,  B01J35/00 ,  B01J23/58 ,  H01M4/92 ,  B01J23/02 ,  B01J33/00 ,  B01J37/00 ,  B01J37/02 ,  B01J37/14 ,  H01M8/1011

Abstract: A novel catalyst includes a plurality of nanoparticles, each nanoparticle including a core made of a catalytic metal and a porous shell surrounding the core, made of metal oxide, the porous shell preserving a catalytic function of the core and reducing reduction of the core and coalescence of the nanoparticles.

公开(公告)号：US09633842B2

公开(公告)日：2017-04-25

申请号：US14774226

申请日：2014-03-07

Applicant: Okinawa Institute of Science and Technology School Corporation

Inventor： Vidya Dhar Singh ,  Cathal Cassidy ,  Mukhles Ibrahim Sowwan

IPC: H01L21/02 ,  C30B1/02 ,  C30B28/02 ,  C30B29/06 ,  C30B29/60 ,  H01L29/04 ,  H01L29/16 ,  C01B33/021

CPC classification number: H01L21/02658 ,  C01B33/021 ,  C30B1/023 ,  C30B28/02 ,  C30B29/06 ,  C30B29/60 ,  H01L21/02532 ,  H01L21/02601 ,  H01L21/02631 ,  H01L29/04 ,  H01L29/16

Abstract: A method of forming crystallized semiconductor particles includes: forming amorphous semiconductor particles in a vacuumed aggregation chamber; transporting the amorphous semiconductor particles formed in the vacuumed aggregation chamber to a vacuumed deposition chamber within which a substrate is held; and applying a vapor of a metal catalyst to the amorphous semi-conductor particles while still in transit to the substrate in the vacuumed deposition chamber to induce crystallization of at least portion of the amorphous semiconductor particles via the metal catalyst in the transit, thereby depositing the crystallized semiconductor particles with the metal catalyst attached thereto onto the substrate.