公开(公告)号：US20080128861A1

公开(公告)日：2008-06-05

申请号：US11555906

申请日：2006-11-02

申请人： Omer H. Dokumaci ,  Gregory G. Freeman ,  Marwan H. Khater ,  Rajendran Krishnasamy ,  Kathryn T. Schonenberg

发明人： Omer H. Dokumaci ,  Gregory G. Freeman ,  Marwan H. Khater ,  Rajendran Krishnasamy ,  Kathryn T. Schonenberg

IPC分类号： H01L29/73

CPC分类号： H01L29/7378 ,  H01L29/0821 ,  H01L29/66242

摘要： Methods of boosting the performance of bipolar transistor, especially SiGe heterojunction bipolar transistors, is provided together with the structure that is formed by the inventive methods. The methods include providing a species-rich dopant region comprising C, a noble gas, or mixtures thereof into at least a collector. The species-rich dopant region forms a perimeter or donut-shaped dopant region around a center portion of the collector. A first conductivity type dopant is then implanted into the center portion of the collector to form a first conductivity type dopant region that is laterally constrained, i.e., confined, by the outer species-rich dopant region.

摘要翻译： 提供双极晶体管，特别是SiGe异质结双极晶体管的性能的方法与通过本发明方法形成的结构一起提供。 所述方法包括向至少一个收集器提供包含C，惰性气体或其混合物的富含物质的掺杂剂区域。 富含物质的掺杂剂区域围绕收集器的中心部分形成周边或环形掺杂剂区域。 然后将第一导电型掺杂剂注入到集电极的中心部分中，以形成由外部富物质掺杂区域横向约束，即限制的第一导电型掺杂剂区域。

公开(公告)号：US07476914B2

公开(公告)日：2009-01-13

申请号：US11555906

申请日：2006-11-02

申请人： Omer H. Dokumaci ,  Gregory G. Freeman ,  Marwan H. Khater ,  Rajendran Krishnasamy ,  Kathryn T. Schonenberg

发明人： Omer H. Dokumaci ,  Gregory G. Freeman ,  Marwan H. Khater ,  Rajendran Krishnasamy ,  Kathryn T. Schonenberg

IPC分类号： H01L21/331

CPC分类号： H01L29/7378 ,  H01L29/0821 ,  H01L29/66242

摘要： Methods of boosting the performance of bipolar transistor, especially SiGe heterojunction bipolar transistors, is provided together with the structure that is formed by the inventive methods. The methods include providing a species-rich dopant region comprising C, a noble gas, or mixtures thereof into at least a collector. The species-rich dopant region forms a perimeter or donut-shaped dopant region around a center portion of the collector. A first conductivity type dopant is then implanted into the center portion of the collector to form a first conductivity type dopant region that is laterally constrained, i.e., confined, by the outer species-rich dopant region.

摘要翻译： 提供双极晶体管，特别是SiGe异质结双极晶体管的性能的方法与通过本发明方法形成的结构一起提供。 所述方法包括向至少一个收集器提供包含C，惰性气体或其混合物的富含物质的掺杂剂区域。 富含物质的掺杂剂区域围绕收集器的中心部分形成周边或环形掺杂剂区域。 然后将第一导电型掺杂剂注入到集电极的中心部分中，以形成由外部富物质掺杂区域横向约束，即限制的第一导电型掺杂剂区域。

公开(公告)号：US07144787B2

公开(公告)日：2006-12-05

申请号：US10908363

申请日：2005-05-09

申请人： Omer H. Dokumaci ,  Gregory G. Freeman ,  Marwan H. Khater ,  Rajendran Krishnasamy ,  Kathryn T. Schonenberg

发明人： Omer H. Dokumaci ,  Gregory G. Freeman ,  Marwan H. Khater ,  Rajendran Krishnasamy ,  Kathryn T. Schonenberg

IPC分类号： H01L21/331

CPC分类号： H01L29/7378 ,  H01L29/0821 ,  H01L29/66242

摘要： Methods of boosting the performance of bipolar transistor, especially SiGe heterojunction bipolar transistors, is provided together with the structure that is formed by the inventive methods. The methods include providing a species-rich dopant region comprising C, a noble gas, or mixtures thereof into at least a collector. The species-rich dopant region forms a perimeter or donut-shaped dopant region around a center portion of the collector. A first conductivity type dopant is then implanted into the center portion of the collector to form a first conductivity type dopant region that is laterally constrained, i.e., confined, by the outer species-rich dopant region.

公开(公告)号：US07442595B2

公开(公告)日：2008-10-28

申请号：US11511047

申请日：2006-08-28

申请人： Gregory G. Freeman ,  Marwan H. Khater ,  Rajendran Krishnasamy ,  Kathryn T. Schonenberg ,  Andreas D. Stricker

发明人： Gregory G. Freeman ,  Marwan H. Khater ,  Rajendran Krishnasamy ,  Kathryn T. Schonenberg ,  Andreas D. Stricker

IPC分类号： H01L21/337

CPC分类号： H01L29/66068 ,  H01L29/2003 ,  H01L29/66242

摘要： A structure and method where C is incorporated into the collector region of a heterojunction bipolar device by a method which does not include C ion implantation are provided. In the present invention, C is incorporated into the collector by epitaxy in a perimeter trench etched into the collector region to better control the carbon profile and location. The trench is formed by etching the collector region using the trench isolation regions and a patterned layer over the center part of the collector as masks. Then, Si:C is grown using selective epitaxy inside the trench to form a Si:C region with sharp and well-defined edges. The depth, width and C content can be optimized to control and tailor the collector implant diffusion and to reduce the perimeter component of parasitic CCB.

摘要翻译： 提供了通过不包括C离子注入的方法将C并入到异质结双极器件的集电极区域中的结构和方法。 在本发明中，通过在刻蚀到集电极区域的周边沟槽中外延生长将C引入集电体，以更好地控制碳分布和位置。 通过使用沟槽隔离区域将集电极区域和在集电体的中心部分上的图案化层作为掩模来形成沟槽。 然后，使用沟槽内部的选择性外延生长Si：C以形成具有清晰且明确界定的边缘的Si：C区域。 可以优化深度，宽度和C含量以控制和定制集电极注入扩散并减少寄生C CB的周边分量。

公开(公告)号：US07170083B2

公开(公告)日：2007-01-30

申请号：US10905510

申请日：2005-01-07

申请人： Gregory G. Freeman ,  Marwan H. Khater ,  Rajendran Krishnasamy ,  Kathryn T. Schonenberg ,  Andreas D Stricker

发明人： Gregory G. Freeman ,  Marwan H. Khater ,  Rajendran Krishnasamy ,  Kathryn T. Schonenberg ,  Andreas D Stricker

IPC分类号： H01L29/06

CPC分类号： H01L29/66068 ,  H01L29/2003 ,  H01L29/66242

摘要： A structure and method where C is incorporated into the collector region of a heterojunction bipolar device by a method which does not include C ion implantation are provided. In the present invention, C is incorporated into the collector by epitaxy in a perimeter trench etched into the collector region to better control the carbon profile and location. The trench is formed by etching the collector region using the trench isolation regions and a patterned layer over the center part of the collector as masks. Then, Si:C is grown using selective epitaxy inside the trench to form a Si:C region with sharp and well-defined edges. The depth, width and C content can be optimized to control and tailor the collector implant diffusion and to reduce the perimeter component of parasitic CCB.

摘要翻译： 提供了通过不包括C离子注入的方法将C并入到异质结双极器件的集电极区域中的结构和方法。 在本发明中，通过在刻蚀到集电极区域的周边沟槽中外延生长将C引入集电体，以更好地控制碳分布和位置。 通过使用沟槽隔离区域将集电极区域和在集电体的中心部分上的图案化层作为掩模来形成沟槽。 然后，使用沟槽内部的选择性外延生长Si：C以形成具有清晰且明确界定的边缘的Si：C区域。 可以优化深度，宽度和C含量以控制和定制集电极注入扩散并减少寄生C CB的周边分量。

公开(公告)号：US07329941B2

公开(公告)日：2008-02-12

申请号：US10710548

申请日：2004-07-20

申请人： Dureseti Chidambarrao ,  Gregory G. Freeman ,  Marwan H. Khater

发明人： Dureseti Chidambarrao ,  Gregory G. Freeman ,  Marwan H. Khater

IPC分类号： H01L27/082

CPC分类号： H01L29/66242 ,  H01L29/0804 ,  H01L29/0821 ,  H01L29/1004 ,  H01L29/41708 ,  H01L29/42304 ,  H01L29/66272 ,  H01L29/732 ,  H01L29/7378

摘要： The mobility of charge carriers in a bipolar (BJT) device is increased by creating compressive strain in the device to increase mobility of electrons in the device, and creating tensile strain in the device to increase mobility of holes in the device. The compressive and tensile strain are created by applying a stress film adjacent an emitter structure of the device and atop a base film of the device. In this manner, the compressive and tensile strain are located in close proximity to an intrinsic portion of the device. A suitable material for the stress film is nitride. The emitter structure may be “T-shaped”, having a lateral portion atop an upright portion, a bottom of the upright portion forms a contact to the base film, and the lateral portion overhangs the base film.

摘要翻译： 双极（BJT）器件中的载流子的迁移率通过在器件中产生压缩应变以增加器件中电子的迁移率而增加，并且在器件中产生拉伸应变以增加器件中的孔的移动性。 通过在装置的发射极结构附近施加应力膜并且在器件的基底上方施加应力膜来产生压缩和拉伸应变。 以这种方式，压缩和拉伸应变位于设备本身部分附近。 适用于应力膜的材料是氮化物。 发射体结构可以是“T形”，其具有在直立部分顶部的侧面部分，直立部分的底部形成与基底膜的接触，并且侧向部分悬垂在基底膜上。

公开(公告)号：US07741186B2

公开(公告)日：2010-06-22

申请号：US11946940

申请日：2007-11-29

申请人： Dureseti Chidambarrao ,  Gregory G. Freeman ,  Marwan H. Khater

发明人： Dureseti Chidambarrao ,  Gregory G. Freeman ,  Marwan H. Khater

IPC分类号： H01L21/8222

CPC分类号： H01L29/66242 ,  H01L29/0804 ,  H01L29/0821 ,  H01L29/1004 ,  H01L29/41708 ,  H01L29/42304 ,  H01L29/66272 ,  H01L29/732 ,  H01L29/7378

摘要： The mobility of charge carriers in a bipolar (BJT) device is increased by creating compressive strain in the device to increase mobility of electrons in the device, and creating tensile strain in the device to increase mobility of holes in the device. The compressive and tensile strain are created by applying a stress film adjacent an emitter structure of the device and atop a base film of the device. In this manner, the compressive and tensile strain are located in close proximity to an intrinsic portion of the device. A suitable material for the stress film is nitride. The emitter structure may be “T-shaped”, having a lateral portion atop an upright portion, a bottom of the upright portion forms a contact to the base film, and the lateral portion overhangs the base film.

摘要翻译： 双极（BJT）器件中的载流子的迁移率通过在器件中产生压缩应变以增加器件中电子的迁移率而增加，并且在器件中产生拉伸应变以增加器件中的孔的移动性。 通过在装置的发射极结构附近施加应力膜并且在器件的基底上方施加应力膜来产生压缩和拉伸应变。 以这种方式，压缩和拉伸应变位于设备本身部分附近。 适用于应力膜的材料是氮化物。 发射体结构可以是“T形”，其具有在直立部分顶部的侧面部分，直立部分的底部形成与基底膜的接触，并且侧向部分悬垂在基底膜上。

公开(公告)号：US07615457B2

公开(公告)日：2009-11-10

申请号：US12220521

申请日：2008-07-25

申请人： Hiroyuki Akatsu ,  Rama Divakaruni ,  Gregory G. Freeman ,  David R. Greenberg ,  Marwan H. Khater ,  William R. Tonti

发明人： Hiroyuki Akatsu ,  Rama Divakaruni ,  Gregory G. Freeman ,  David R. Greenberg ,  Marwan H. Khater ,  William R. Tonti

IPC分类号： H01L21/265 ,  H01L27/102

CPC分类号： H01L29/66242 ,  H01L29/0821 ,  H01L29/7378

摘要： A method is provided for making a bipolar transistor which includes a tapered, i.e. frustum-shaped, collector pedestal having an upper substantially planar surface, a lower surface, and a slanted sidewall extending between the upper surface and the lower surface, the upper surface having substantially less area than the lower surface. The collector pedestal can be formed on a surface of a collector active region exposed within an opening extending through first and second overlying dielectric regions, where the opening defines vertically aligned edges of the first and second dielectric regions.

摘要翻译： 提供了一种用于制造双极晶体管的方法，该双极晶体管包括具有上部基本上平坦的表面，下表面和在上表面和下表面之间延伸的倾斜侧壁的锥形，即截头锥形收集器基座，上表面具有 比下表面小得多的面积。 收集器基座可以形成在暴露在通过第一和第二覆盖介质区域延伸的开口内的集电极有源区域的表面上，其中开口限定第一和第二电介质区域的垂直对齐的边缘。

公开(公告)号：US20080318373A1

公开(公告)日：2008-12-25

申请号：US12220521

申请日：2008-07-25

申请人： Hiroyuki Akatsu ,  Rama Divakaruni ,  Gregory G. Freeman ,  David R. Greenberg ,  Marwan H. Khater ,  William R. Tonti

发明人： Hiroyuki Akatsu ,  Rama Divakaruni ,  Gregory G. Freeman ,  David R. Greenberg ,  Marwan H. Khater ,  William R. Tonti

IPC分类号： H01L21/8238

CPC分类号： H01L29/66242 ,  H01L29/0821 ,  H01L29/7378

摘要： A method is provided for making a bipolar transistor which includes a tapered, i.e. frustum-shaped, collector pedestal having an upper substantially planar surface, a lower surface, and a slanted sidewall extending between the upper surface and the lower surface, the upper surface having substantially less area than the lower surface. The collector pedestal can be formed on a surface of a collector active region exposed within an opening extending through first and second overlying dielectric regions, where the opening defines vertically aligned edges of the first and second dielectric regions.

摘要翻译： 提供了一种用于制造双极晶体管的方法，该双极晶体管包括锥形的，即截头锥形的收集器基座，其具有上部基本平坦的表面，下表面和在上表面和下表面之间延伸的倾斜侧壁，上表面具有 比下表面小得多的面积。 收集器基座可以形成在暴露在通过第一和第二覆盖介质区域延伸的开口内的集电极有源区域的表面上，其中开口限定第一和第二电介质区域的垂直对齐的边缘。

公开(公告)号：US20050233535A1

公开(公告)日：2005-10-20

申请号：US11150894

申请日：2005-06-13

申请人： Gregory G. Freeman ,  Marwan H. Khater ,  Francois Pagette

发明人： Gregory G. Freeman ,  Marwan H. Khater ,  Francois Pagette

IPC分类号： H01L29/737 ,  H01L21/331 ,  H01L21/8222 ,  H01L29/10 ,  H01L29/732 ,  H01L21/328 ,  H01L29/70

CPC分类号： H01L29/66287 ,  H01L29/1004 ,  H01L29/732

摘要： A self-aligned bipolar transistor structure having a raised extrinsic base comprising an outer region and an inner region of different doping concentrations and methods of fabricating the transistor are disclosed. More specifically, the self-alignment of the extrinsic base to the emitter is accomplished by forming the extrinsic base in two regions. First, a first material of silicon or polysilicon having a first doping concentration is provided to form an outer extrinsic base region. Then a first opening is formed in the first material layer by lithography within which a dummy emitter pedestal is formed, which results in forming a trench between the sidewall of the first opening and the dummy pedestal. A second material of a second doping concentration is then provided inside the trench forming a distinct inner extrinsic base extension region to self-align the raised extrinsic base edge to the dummy pedestal edge. Since the emitter is formed where the dummy pedestal existed, the extrinsic base is also self-aligned to the emitter. The silicon or polysilicon forming the inner extrinsic base extension region can also be grown in the trench with selective or non-selective epitaxy.