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    SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME, AND METHOD OF FORMING MULTILAYER SEMICONDUCTOR THIN FILM
    2.
    发明申请
    SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME, AND METHOD OF FORMING MULTILAYER SEMICONDUCTOR THIN FILM 有权
    半导体器件及其制造方法以及形成多层半导体薄膜的方法

    公开(公告)号：US20120025173A1

    公开(公告)日：2012-02-02

    申请号：US12848732

    申请日：2010-08-02

    申请人： Norihito Kobayashi ,  Mari Sasaki ,  Takahiro Ohe

    发明人： Norihito Kobayashi ,  Mari Sasaki ,  Takahiro Ohe

    IPC分类号： H01L51/10 ,  H01L51/40

    CPC分类号： H01L51/0062 ,  H01L51/0003 ,  H01L51/0073 ,  H01L51/0516 ,  H01L51/052 ,  H01L51/0558

    摘要： A method of manufacturing a semiconductor device including a gate electrode, a gate insulating layer, source/drain electrodes, and a channel-forming region that are disposed on a base is provided. The method includes the steps of forming a thin film by application of a mixed solution including a polymeric insulating material and a dioxaanthanthrene compound represented by structural formula (1) below; and subsequently drying the thin film to induce phase separation of the polymeric insulating material and the dioxaanthanthrene compound, thereby forming the gate insulating layer from the polymeric insulating material and the channel-forming region from the dioxaanthanthrene compound: wherein at least one of R3 and R9 represents a substituent other than hydrogen.

    摘要翻译： 提供一种制造半导体器件的方法，该半导体器件包括设置在基底上的栅电极，栅极绝缘层，源/漏电极和沟道形成区域。 该方法包括以下步骤：通过使用包含以下结构式（1）表示的聚合绝缘材料和二氧杂蒽化合物的混合溶液形成薄膜; 随后干燥该薄膜以诱发聚合物绝缘材料和二氧杂蒽化合物的相分离，由此从二氧杂蒽化合物的聚合物绝缘材料和沟道形成区形成栅极绝缘层：其中R3和R9中的至少一个 表示除氢以外的取代基。

    Semiconductor device, method of manufacturing the same, and method of forming multilayer semiconductor thin film
    3.
    发明授权
    Semiconductor device, method of manufacturing the same, and method of forming multilayer semiconductor thin film 有权
    半导体装置及其制造方法以及多层半导体薄膜的形成方法

    公开(公告)号：US08399288B2

    公开(公告)日：2013-03-19

    申请号：US12848732

    申请日：2010-08-02

    申请人： Norihito Kobayashi ,  Mari Sasaki ,  Takahiro Ohe

    发明人： Norihito Kobayashi ,  Mari Sasaki ,  Takahiro Ohe

    IPC分类号： H01L51/40

    CPC分类号： H01L51/0062 ,  H01L51/0003 ,  H01L51/0073 ,  H01L51/0516 ,  H01L51/052 ,  H01L51/0558

    摘要： A method of manufacturing a semiconductor device including a gate electrode, a gate insulating layer, source/drain electrodes, and a channel-forming region that are disposed on a base is provided. The method includes the steps of forming a thin film by application of a mixed solution including a polymeric insulating material and a dioxaanthanthrene compound represented by structural formula (1) below; and subsequently drying the thin film to induce phase separation of the polymeric insulating material and the dioxaanthanthrene compound, thereby forming the gate insulating layer from the polymeric insulating material and the channel-forming region from the dioxaanthanthrene compound: wherein at least one of R3 and R9 represents a substituent other than hydrogen.

    摘要翻译： 提供一种制造半导体器件的方法，该半导体器件包括设置在基底上的栅电极，栅极绝缘层，源/漏电极和沟道形成区域。 该方法包括以下步骤：通过使用包含以下结构式（1）表示的聚合绝缘材料和二氧杂蒽化合物的混合溶液形成薄膜; 随后干燥该薄膜以诱发聚合物绝缘材料和二氧杂蒽化合物的相分离，由此从二氧杂蒽化合物的聚合物绝缘材料和沟道形成区形成栅极绝缘层：其中R3和R9中的至少一个 表示除氢以外的取代基。

    METHOD OF MANUFACTURING ORGANIC ELEMENT, METHOD OF BONDING ORGANIC MOLECULAR CRYSTAL LAYER, METHOD OF MANUFACTURING FINE LINEAR CONDUCTOR, ORGANIC ELEMENT, AND FINE LINEAR CONDUCTOR
    4.
    发明申请
    METHOD OF MANUFACTURING ORGANIC ELEMENT, METHOD OF BONDING ORGANIC MOLECULAR CRYSTAL LAYER, METHOD OF MANUFACTURING FINE LINEAR CONDUCTOR, ORGANIC ELEMENT, AND FINE LINEAR CONDUCTOR 审中-公开
    制造有机元素的方法，有机分子晶体层的结合方法，制造微细线性导体，有机元素和细线性导体的方法

    公开(公告)号：US20140014932A1

    公开(公告)日：2014-01-16

    申请号：US14005960

    申请日：2012-03-07

    申请人： Yosuke Murakami ,  Norihito Kobayashi

    发明人： Yosuke Murakami ,  Norihito Kobayashi

    IPC分类号： H01L51/05

    CPC分类号： H01L51/0512 ,  H01L51/0012 ,  H01L51/0541 ,  H01L51/102

    摘要： [Object] To provide a method of bonding an organic molecular crystal layer, which is capable of bonding an organic molecular crystal layer to an electrode by controlling the alignment of the organic molecular crystal layer, and to provide a method of manufacturing an organic element using the bonding method.[Solving Means] Alignment of an organic molecular crystal layer 13 with respect to an electrode 12 is controlled by controlling an inclined angle of a side surface 12a of the electrode 12 with respect to a main surface of an insulating base 11, in the case where the electrode 12 and the organic molecular crystal layer 13 are formed on the insulating base 11, the organic molecular crystal layer 13 including an aromatic compound, the organic molecular crystal layer 13 being bonded to the electrode 12. The side surface of the electrode 12 may be formed to have a plurality of surfaces having different inclined angles.

    摘要翻译： 本发明提供一种能够通过控制有机分子晶体层的取向而将有机分子结晶层与电极结合的有机分子晶体层的结合方法，提供使用 接合方法。 [解决方案]有机分子晶体层13相对于电极12的取向通过控制电极12的侧表面12a相对于绝缘基体11的主表面的倾斜角来控制，在这种情况下 电极12和有机分子结晶层13形成在绝缘基体11上，包含芳香族化合物的有机分子结晶层13，有机分子结晶层13与电极12接合。电极12的侧面 形成为具有不同倾斜角度的多个表面。

    ANTHANTHRENE BASED COMPOUND AND SEMICONDUCTOR DEVICE
    6.
    发明申请
    ANTHANTHRENE BASED COMPOUND AND SEMICONDUCTOR DEVICE 审中-公开
    基于ANTHANTHRENE的化合物和半导体器件

    公开(公告)号：US20110042658A1

    公开(公告)日：2011-02-24

    申请号：US12821598

    申请日：2010-06-23

    申请人： Norihito Kobayashi

    发明人： Norihito Kobayashi

    IPC分类号： H01L51/10 ,  C07D493/04

    CPC分类号： H01L51/006 ,  C07D493/06 ,  C09K11/06 ,  C09K2211/1011 ,  C09K2211/1088 ,  H01L51/0073 ,  H01L51/0558 ,  H05B33/10

    摘要： An anthanthrene based compound of the structural formula (1) is disclosed: wherein X represents an element of the Group 16; n represents an integer of from 0 to 20; m represents an integer of from 1 to 9; a bonding position in the A segment to the B segment, a bonding position in the B segment to the A segment, a bonding position in the B segment to the C segment, and a bonding position in the C segment to the B segment are at least one of from the 1-position to the 5-position and from the 7-position to the 11-position; and each of substituents R1, R2, R3, R4, R5, R7, R8, R9, R10 and R11 independently represents, for example, a substituent of one member selected from the group consisting of a hydrogen atom, an alkyl group, an aryl group, an arylalkyl group and the like.

    摘要翻译： 公开了结构式（1）的基于蒽醌的化合物：其中X表示第16族的元素; n表示0〜20的整数， m表示1〜9的整数， 在A段到B段的结合位置，B区段中的粘合位置到A段，B区段到C区段的结合位置以及C区段到B区段的结合位置在 从一个位置到五个位置，从七个位置到十一个位置中的至少一个; 取代基R 1，R 2，R 3，R 4，R 5，R 7，R 8，R 9，R 10和R 11各自独立地表示例如选自氢原子，烷基，芳基 基，芳基烷基等。

    METHOD FOR PRODUCING ORGANIC TRANSISTOR, ORGANIC TRANSISTOR, METHOD FOR PRODUCING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND ELECTRONIC APPARATUS
    7.
    发明申请
    METHOD FOR PRODUCING ORGANIC TRANSISTOR, ORGANIC TRANSISTOR, METHOD FOR PRODUCING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND ELECTRONIC APPARATUS 有权
    用于制造有机晶体的方法，有机晶体管，用于制造半导体器件的方法，半导体器件和电子设备

    公开(公告)号：US20130328036A1

    公开(公告)日：2013-12-12

    申请号：US13981721

    申请日：2012-02-23

    申请人： Norihito Kobayashi

    发明人： Norihito Kobayashi

    IPC分类号： H01L51/00

    CPC分类号： H01L51/005 ,  C07D493/06 ,  H01L51/0003 ,  H01L51/0058 ,  H01L51/0073 ,  H01L51/052 ,  H01L51/0545

    摘要： Provided is a method of producing an organic transistor, including collectively forming a gate insulating film and an organic semiconductor film by applying, onto a gate electrode, a solution including a polymer and at least one of compounds represented by General Formulas 1 to 4 and 5 to 7, a compound having a structure represented by General Formula 4, a compound having a structure represented by General Formula 5 or 6, and forming a source electrode and a drain electrode on the organic semiconductor film. (where R is a linear or branched alkyl group) (where R is an alkyl group) (where R is an alkyl group) (where A1 and A2 are represented by Formula 8) (where R is an alkyl group or another substituent)

    摘要翻译： 提供一种制造有机晶体管的方法，其包括通过将包含聚合物和至少一种由通式1至4和5表示的化合物的溶液施加到栅电极上来共同形成栅极绝缘膜和有机半导体膜 具有由通式4表示的结构的化合物，具有由通式5或6表示的结构的化合物，并在有机半导体膜上形成源电极和漏电极。 （其中R是直链或支链烷基）（其中R是烷基）（其中R是烷基）（其中A1和A2由式8表示）（其中R是烷基或其它取代基）

    Method for producing organic transistor, organic transistor, method for producing semiconductor device, semiconductor device, and electronic apparatus
    8.
    发明授权
    Method for producing organic transistor, organic transistor, method for producing semiconductor device, semiconductor device, and electronic apparatus 有权
    有机晶体管的制造方法，有机晶体管，半导体装置的制造方法，半导体装置以及电子装置

    公开(公告)号：US09040966B2

    公开(公告)日：2015-05-26

    申请号：US13981721

    申请日：2012-02-23

    申请人： Norihito Kobayashi

    发明人： Norihito Kobayashi

    IPC分类号： H01L35/24 ,  H01L51/00 ,  C07D493/06 ,  H01L51/05

    CPC分类号： H01L51/005 ,  C07D493/06 ,  H01L51/0003 ,  H01L51/0058 ,  H01L51/0073 ,  H01L51/052 ,  H01L51/0545

    摘要： Provided is a method of producing an organic transistor, including collectively forming a gate insulating film and an organic semiconductor film by applying, onto a gate electrode, a solution including a polymer and at least one of compounds represented by General Formulas 1 to 4 and 5 to 7, a compound having a structure represented by General Formula 4, a compound having a structure represented by General Formula 5 or 6, and forming a source electrode and a drain electrode on the organic semiconductor film. (where R is a linear or branched alkyl group) (where R is an alkyl group) (where R is an alkyl group) (where A1 and A2 are represented by Formula 8) (where R is an alkyl group or another substituent).

    摘要翻译： 提供一种制造有机晶体管的方法，其包括通过将包含聚合物和至少一种由通式1至4和5表示的化合物的溶液施加到栅电极上来共同形成栅极绝缘膜和有机半导体膜 具有由通式4表示的结构的化合物，具有由通式5或6表示的结构的化合物，并在有机半导体膜上形成源电极和漏电极。 （其中R是直链或支链烷基）（其中R是烷基）（其中R是烷基）（其中A1和A2由式8表示）（其中R是烷基或另一取代基）。

    PHOTOELECTRIC CONVERSION ELEMENT AND SOLID-STATE IMAGING DEVICE
    9.
    发明申请
    PHOTOELECTRIC CONVERSION ELEMENT AND SOLID-STATE IMAGING DEVICE 有权
    光电转换元件和固态成像装置

    公开(公告)号：US20130099225A1

    公开(公告)日：2013-04-25

    申请号：US13807403

    申请日：2011-06-24

    申请人： Ayumi Nihei ,  Masaki Murata ,  Norihito Kobayashi

    发明人： Ayumi Nihei ,  Masaki Murata ,  Norihito Kobayashi

    IPC分类号： H01L51/00 ,  H01L51/44

    CPC分类号： H01L51/0073 ,  C07D493/06 ,  C09B57/00 ,  H01L27/14665 ,  H01L27/307 ,  H01L51/0058 ,  H01L51/0068 ,  H01L51/0076 ,  H01L51/42 ,  H01L51/44 ,  H01L51/442 ,  Y02E10/549

    摘要： Provided is a photoelectric conversion element including a photoelectric conversion material layer that is constituted by an organic material having more excellent sensitivity and responsiveness than those of conventional ones.The photoelectric conversion element of the present invention includes (a-1) a first electrode 21 and a second electrode 22 which are disposed apart from each other, and (a-2) a photoelectric conversion material layer 30 that is disposed between the first electrode 21 and the second electrode 22, wherein the photoelectric conversion material layer 30 is formed of a dioxaanthanthrene-based compound represented by the following structural formula (1).

    摘要翻译： 提供了一种光电转换元件，其包括由具有比常规的更好的灵敏度和响应性的有机材料构成的光电转换材料层。 本发明的光电转换元件包括：（a-1）彼此分开设置的第一电极21和第二电极22，（a-2）光电转换材料层30，其设置在第一电极 21和第二电极22，其中光电转换材料层30由以下结构式（1）表示的基于二氧杂环丁烷的化合物形成。