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1.发明申请METHOD OF FORMING ORGANIC THIN FILM AND ORGANIC THIN FILM FORMING APPARATUS, AS WELL AS METHOD OF MANUFACTURING ORGANIC DEVICE 审中-公开形成有机薄膜和有机薄膜形成装置的方法，作为制造有机装置的方法公开(公告)号：US20130143357A1
公开(公告)日：2013-06-06
申请号：US13816983
申请日：2011-08-10
申请人： Osamu Goto , Daisuke Hobara , Akihiro Nomoto , Yosuke Murakami , Shigetaka Tomiya , Norihito Kobayashi , Keisuke Shimizu , Mao Katsuhara , Takahiro Ohe , Noriyuki Kawashima , Yuka Takahashi , Toshio Fukuda , Yui Ishii
发明人： Osamu Goto , Daisuke Hobara , Akihiro Nomoto , Yosuke Murakami , Shigetaka Tomiya , Norihito Kobayashi , Keisuke Shimizu , Mao Katsuhara , Takahiro Ohe , Noriyuki Kawashima , Yuka Takahashi , Toshio Fukuda , Yui Ishii
IPC分类号： H01L51/00
CPC分类号： H01L51/0002 , H01L51/0026 , H01L51/0541 , H01L51/0545
摘要： There is provided a method of forming an organic thin film, capable of forming a single-crystal organic thin film easily and rapidly while controlling a thickness and a size. After an organic solution is supplied to one surface (a solution accumulating region wide in width, and a solution constricting region narrow in width and connected thereto) of a film-formation substrate supported by a support controllable in temperature, a movable body controllable in temperature independently of the support is moved along a surface of the support while being kept in contact with the organic solution. The temperature of the support is set at a temperature positioned between a solubility curve and a super-solubility curve concerning the organic solution, and the temperature of the movable body is set at a temperature positioned on a side higher in temperature than the solubility curve.
摘要翻译： 提供一种形成有机薄膜的方法，其能够在控制厚度和尺寸的同时容易且快速地形成单晶有机薄膜。 在由可控制的支撑体支撑的成膜基材的一个表面（广泛宽度的溶液积聚区域和宽度窄的溶液收缩区域）供给有机溶液后，可控温度的可移动体 独立于载体在保持与有机溶液接触的同时沿着载体的表面移动。 将载体的温度设定在溶解度曲线和有机溶液的超溶解度曲线之间的温度下，将移动体的温度设定在比溶解度曲线高的一侧的温度。
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2.发明授权公开(公告)号：US08546197B2
公开(公告)日：2013-10-01
申请号：US13106278
申请日：2011-05-12
IPC分类号： H01L21/00
CPC分类号： H01L51/0009 , B23K26/40 , B23K2103/172 , B23K2103/30 , B23K2103/50 , H01L27/283 , H01L51/0055 , H01L51/0545
摘要： A method of manufacturing a thin film transistor includes: forming a gate electrode on a substrate; forming a gate insulating layer on the gate electrode; forming an organic semiconductor layer on the gate insulating layer; forming an organic semiconductor pattern by selectively removing part of the organic semiconductor layer by means of a laser ablation method; and forming source and drain electrodes on the organic semiconductor pattern.
摘要翻译： 制造薄膜晶体管的方法包括：在基板上形成栅电极; 在栅电极上形成栅极绝缘层; 在所述栅绝缘层上形成有机半导体层; 通过激光烧蚀法有选择地去除有机半导体层的一部分来形成有机半导体图案; 以及在有机半导体图案上形成源极和漏极。
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3.发明申请公开(公告)号：US20110297938A1
公开(公告)日：2011-12-08
申请号：US13106278
申请日：2011-05-12
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L51/0009 , B23K26/40 , B23K2103/172 , B23K2103/30 , B23K2103/50 , H01L27/283 , H01L51/0055 , H01L51/0545
摘要： A method of manufacturing a thin film transistor includes: forming a gate electrode on a substrate; forming a gate insulating layer on the gate electrode; forming an organic semiconductor layer on the gate insulating layer; forming an organic semiconductor pattern by selectively removing part of the organic semiconductor layer by means of a laser ablation method; and forming source and drain electrodes on the organic semiconductor pattern.
摘要翻译： 制造薄膜晶体管的方法包括：在基板上形成栅电极; 在栅电极上形成栅极绝缘层; 在所述栅绝缘层上形成有机半导体层; 通过激光烧蚀法有选择地去除有机半导体层的一部分来形成有机半导体图案; 以及在有机半导体图案上形成源极和漏极。
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4.发明申请SEMICONDUCTOR COMPOSITE FILM, METHOD FOR FORMING SEMICONDUCTOR COMPOSITE FILM, THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING THIN FILM TRANSISTOR, AND ELECTRONIC APPARATUS 有权半导体复合膜，形成半导体复合膜的薄膜，薄膜晶体管，制造薄膜晶体管的方法和电子设备公开(公告)号：US20100019233A1
公开(公告)日：2010-01-28
申请号：US12502606
申请日：2009-07-14
申请人： Noriyuki Kawashima , Takahiro Ohe
发明人： Noriyuki Kawashima , Takahiro Ohe
CPC分类号： H01L51/0566 , H01L51/0004 , H01L51/0537 , H01L51/0545 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor composite film includes a semiconductor thin film layer containing an organic semiconductor material, an insulating thin film layer formed from a polymer material phase-separated from the organic semiconductor material in the film thickness direction, and a fine particle material dispersed in at least one of the semiconductor thin film layer and the insulating thin film layer.
摘要翻译： 半导体复合膜包括含有有机半导体材料的半导体薄膜层，由从有机半导体材料在膜厚度方向相分离的聚合物材料形成的绝缘薄膜层和分散在至少一个 的半导体薄膜层和绝缘薄膜层。
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5.发明申请ORGANIC SEMICONDUCTOR MATERIAL, ORGANIC SEMICONDUCTOR THIN FILM AND ORGANIC SEMICONDUCTOR DEVICE 失效有机半导体材料，有机半导体薄膜和有机半导体器件公开(公告)号：US20060273311A1
公开(公告)日：2006-12-07
申请号：US11421295
申请日：2006-05-31
IPC分类号： H01L29/08
CPC分类号： H01L51/0054 , H01L51/0003 , H01L51/0012 , H01L51/0055 , H01L51/0541 , H01L51/0545
摘要： An organic semiconductor material is provided. The organic semiconductor material includes a polyacene derivative expressed by the following general formula (1): where each of R1 to R10 may be independently the same substituents or different substituents but all of R1, R4, R5, R6, R9 and R10 may never be hydrogen atoms at the same time, and where each of R1 to R10 is at least one kind of substituent selected from the group consisting of an aliphatic hydrocarbon group having a substituent and of which number of carbon atoms ranges of from 1 to 20, an aromatic hydrocarbon group having a substituent, a complex aromatic group having a substituent, a carboxyl group, a hydride, an ester group, a cyano group, a hydroxyl group, a halogen atom and a hydrogen atom. The organic semiconductor material can be dissolved into an organic solvent at low temperature (for example, room temperature) and is suitable for use with a coating process.
摘要翻译： 提供有机半导体材料。 有机半导体材料包括由以下通式（1）表示的多并苯衍生物：其中R 1至R 10各自可以独立地为相同的取代基或不同的取代基，但 全部R 1，R 4，R 5，R 6，R 9和/或N >和R 10可以不是同时是氢原子，并且其中R 1至R 10中的每一个是至少一种 选自具有取代基的脂肪族烃基，碳原子数为1〜20的取代基，具有取代基的芳香族烃基，具有取代基的配合芳香族基团，羧基，氢化物 酯基，氰基，羟基，卤素原子和氢原子。 有机半导体材料可以在低温（例如室温）下溶解在有机溶剂中，适用于涂布工艺。
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6.发明申请ORGANIC SEMICONDUCTOR MATERIAL, ORGANIC SEMICONDUCTOR THIN FILM AND ORGANIC SEMICONDUCTOR DEVICE 审中-公开有机半导体材料，有机半导体薄膜和有机半导体器件公开(公告)号：US20090140241A1
公开(公告)日：2009-06-04
申请号：US12364601
申请日：2009-02-03
IPC分类号： H01L51/30 , C07C69/76 , C07C255/52
CPC分类号： H01L51/0054 , H01L51/0003 , H01L51/0012 , H01L51/0055 , H01L51/0541 , H01L51/0545
摘要： An organic semiconductor material is provided. The organic semiconductor material includes a polyacene derivative expressed by the following general formula (1): where each of R1 to R10 may be independently the same substituents or different substituents but all of R1, R4, R5, R6, R9 and R10 may never be hydrogen atoms at the same time, and where each of R1 to R10 is at least one kind of substituent selected from the group consisting of an aliphatic hydrocarbon group having a substituent and of which number of carbon atoms ranges of from 1 to 20, an aromatic hydrocarbon group having a substituent, a complex aromatic group having a substituent, a carboxyl group, a hydride, an ester group, a cyano group, a hydroxyl group, a halogen atom and a hydrogen atom. The organic semiconductor material can be dissolved into an organic solvent at low temperature (for example, room temperature) and is suitable for use with a coating process.
摘要翻译： 提供有机半导体材料。 有机半导体材料包括由以下通式（1）表示的多并苯衍生物：其中R 1至R 10各自可以独立地为相同的取代基或不同的取代基，但R 1，R 4，R 5，R 6，R 9和R 10全部可以不为 氢原子，R 1〜R 10各自为选自具有取代基的脂肪族烃基，碳原子数为1〜20的取代基的至少一种取代基，芳香族 具有取代基的烃基，具有取代基的络合芳基，羧基，氢化物，酯基，氰基，羟基，卤素原子和氢原子。 有机半导体材料可以在低温（例如室温）下溶解在有机溶剂中，适用于涂布工艺。
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7.发明申请公开(公告)号：US20090230387A1
公开(公告)日：2009-09-17
申请号：US12364594
申请日：2009-02-03
IPC分类号： H01L51/30 , C07C255/52
CPC分类号： H01L51/0054 , H01L51/0003 , H01L51/0012 , H01L51/0055 , H01L51/0541 , H01L51/0545
摘要： An organic semiconductor material is provided. The organic semiconductor material includes a polyacene derivative expressed by the following general formula (1): where each of R1 to R10 may be independently the same substituents or different substituents but all of R1, R4, R5, R6, R9 and R10 may never be hydrogen atoms at the same time, and where each of R1 to R10 is at least one kind of substituent selected from the group consisting of an aliphatic hydrocarbon group having a substituent and of which number of carbon atoms ranges of from 1 to 20, an aromatic hydrocarbon group having a substituent, a complex aromatic group having a substituent, a carboxyl group, a hydride, an ester group, a cyano group, a hydroxyl group, a halogen atom and a hydrogen atom. The organic semiconductor material can be dissolved into an organic solvent at low temperature (for example, room temperature) and is suitable for use with a coating process.
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8.发明授权Semiconductor composite film, method for forming semiconductor composite film, thin film transistor, method for manufacturing thin film transistor, and electronic apparatus 有权半导体复合膜，半导体复合膜的形成方法，薄膜晶体管，薄膜晶体管的制造方法以及电子设备公开(公告)号：US08481993B2
公开(公告)日：2013-07-09
申请号：US12502606
申请日：2009-07-14
申请人： Noriyuki Kawashima , Takahiro Ohe
发明人： Noriyuki Kawashima , Takahiro Ohe
CPC分类号： H01L51/0566 , H01L51/0004 , H01L51/0537 , H01L51/0545 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor composite film includes a semiconductor thin film layer containing an organic semiconductor material, an insulating thin film layer formed from a polymer material phase-separated from the organic semiconductor material in the film thickness direction, and a fine particle material dispersed in at least one of the semiconductor thin film layer and the insulating thin film layer.
摘要翻译： 半导体复合膜包括含有有机半导体材料的半导体薄膜层，由从有机半导体材料在膜厚度方向相分离的聚合物材料形成的绝缘薄膜层和分散在至少一个 的半导体薄膜层和绝缘薄膜层。
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9.发明授权Organic semiconductor material, organic semiconductor thin film and organic semiconductor device 失效有机半导体材料，有机半导体薄膜和有机半导体器件公开(公告)号：US08115197B2
公开(公告)日：2012-02-14
申请号：US11421295
申请日：2006-05-31
IPC分类号： H01L51/00
CPC分类号： H01L51/0054 , H01L51/0003 , H01L51/0012 , H01L51/0055 , H01L51/0541 , H01L51/0545
摘要： An organic semiconductor material is provided. The organic semiconductor material includes a polyacene derivative expressed by the following general formula (1): where each of R1 to R10 may be independently the same substituents or different substituents but all of R1, R4, R5, R6, R9 and R10 may never be hydrogen atoms at the same time, and where each of R1 to R10 is at least one kind of substituent selected from the group consisting of an aliphatic hydrocarbon group having a substituent and of which number of carbon atoms ranges of from 1 to 20, an aromatic hydrocarbon group having a substituent, a complex aromatic group having a substituent, a carboxyl group, a hydride, an ester group, a cyano group, a hydroxyl group, a halogen atom and a hydrogen atom. The organic semiconductor material can be dissolved into an organic solvent at low temperature (for example, room temperature) and is suitable for use with a coating process.
摘要翻译： 提供有机半导体材料。 有机半导体材料包括由以下通式（1）表示的多并苯衍生物：其中R 1至R 10各自可以独立地为相同的取代基或不同的取代基，但R 1，R 4，R 5，R 6，R 9和R 10全部可以不为 氢原子，R 1〜R 10各自为选自具有取代基的脂肪族烃基，碳原子数为1〜20的取代基的至少一种取代基，芳香族 具有取代基的烃基，具有取代基的络合芳基，羧基，氢化物，酯基，氰基，羟基，卤素原子和氢原子。 有机半导体材料可以在低温（例如室温）下溶解在有机溶剂中，适用于涂布工艺。
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10.发明授权Manufacturing method of thin film transistor and thin film transistor, and display 失效制造薄膜晶体管和薄膜晶体管的方法，并进行显示公开(公告)号：US08283200B2
公开(公告)日：2012-10-09
申请号：US11746738
申请日：2007-05-10
IPC分类号： H01L29/08
CPC分类号： H01L51/055 , H01L51/0022 , H01L51/0541
摘要： A manufacturing method of a thin film transistor made of a stack of an organic semiconductor layer, a gate insulating film and a gate electrode in this order on a substrate, which includes the steps of pattern coating a gate electrode material on the gate insulating film by printing; and carrying out a heat treatment to form the gate electrode resulting from drying for solidification of the pattern coated gate electrode material.
摘要翻译： 在衬底上依次形成由有机半导体层，栅极绝缘膜和栅极电极构成的薄膜晶体管的制造方法，其包括以下步骤：通过在栅极绝缘膜上图案涂覆栅电极材料的步骤 打印; 进行热处理，形成由干燥形成的图案涂布的栅电极材料固化而形成的栅电极。
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