公开(公告)号：US10396240B2

公开(公告)日：2019-08-27

申请号：US15287384

申请日：2016-10-06

Applicant: Ostendo Technologies, Inc.

Inventor： Yea-Chuan Milton Yeh ,  Hussein S. El-Ghoroury ,  Xing Li ,  Jyh-Chia Chen ,  Chih-Li Chuang

IPC: H01L29/15 ,  H01L31/0256 ,  H01L33/06 ,  H01L33/02 ,  H01L33/12 ,  H01L33/30 ,  H01L33/00 ,  H01L33/32

Abstract: A III-nitride semiconductor light emitting device incorporating n-type III-nitride cladding layers, indium containing III-nitride light emitting region, and p-type III-nitride cladding layers. The light emitting region is sandwiched between n- and p-type III-nitride cladding layers and includes multiple sets of multi-quantum-wells (MQWs). The first MQW set formed on the n-type cladding layer comprises relatively lower indium concentration. The second MQW set comprising relatively moderate indium concentration. The third MQW set adjacent to the p-type cladding layer incorporating relatively highest indium concentration of the three MQW sets and is capable of emitting amber-to-red light. The first two MQW sets are utilized as pre-strain layers. Between the MQW sets, intermediate strain compensation layers (ISCLs) are added. The combination of the first two MQW sets and ISCLs prevent phase separation and enhance indium uptake in the third MQW set. The third MQW set, as a result, retains sufficiently high indium concentration to emit amber-to-red light of high output power without any phase separation associated problems.

公开(公告)号：US20170104128A1

公开(公告)日：2017-04-13

申请号：US15287384

申请日：2016-10-06

Applicant: Ostendo Technologies, Inc.

Inventor： Yea-Chuan Milton Yeh ,  Hussein S. El-Ghoroury ,  Xing Li ,  Jyh-Chia Chen ,  Chih-Li Chuang

IPC: H01L33/06 ,  H01L33/00 ,  H01L33/32

CPC classification number: H01L33/06 ,  H01L33/0075 ,  H01L33/02 ,  H01L33/12 ,  H01L33/30 ,  H01L33/32

Abstract: A III-nitride semiconductor light emitting device incorporating n-type III-nitride cladding layers, indium containing III-nitride light emitting region, and p-type III-nitride cladding layers. The light emitting region is sandwiched between n- and p-type III-nitride cladding layers and includes multiple sets of multi-quantum-wells (MQWs). The first MQW set formed on the n-type cladding layer comprises relatively lower indium concentration. The second MQW set comprising relatively moderate indium concentration. The third MQW set adjacent to the p-type cladding layer incorporating relatively highest indium concentration of the three MQW sets and is capable of emitting amber-to-red light. The first two MQW sets are utilized as pre-strain layers. Between the MQW sets, intermediate strain compensation layers (ISCLs) are added. The combination of the first two MQW sets and ISCLs prevent phase separation and enhance indium uptake in the third MQW set. The third MQW set, as a result, retains sufficiently high indium concentration to emit amber-to-red light of high output power without any phase separation associated problems.