公开(公告)号：US20250129514A1

公开(公告)日：2025-04-24

申请号：US18990573

申请日：2024-12-20

Applicant: PANASONIC HOLDINGS CORPORATION ,  OSAKA UNIVERSITY

Inventor： Tomio YAMASHITA ,  Yoshio OKAYAMA ,  Yusuke MORI ,  Masashi YOSHIMURA ,  Masayuki IMANISHI ,  Kousuke MURAKAMI

IPC: C30B25/20 ,  C30B29/40 ,  C30B29/66

Abstract: A method for manufacturing a Group III nitride crystal, the method including: bringing a surface of a Group III nitride seed crystal into contact with a melt including at least one Group III element selected from among gallium, aluminum, and indium and an alkali metal in an atmosphere containing nitrogen to cause the Group III element and the nitrogen to react with each other in the melt to grow a Group III nitride crystal on the Group III nitride seed crystal, the method includes: growing a plurality of island-like Group III nitride crystal nuclei on the surface of the Group III nitride seed crystal; growing a first Group III nitride crystal having an inverted triangular shape or a trapezoidal shape in section from each of the plurality of island-like Group III nitride crystal nuclei; and growing a second Group III nitride crystal such that the second Group III nitride crystal fills a depression of the first Group III nitride crystal to form the second Group III nitride crystal having a flat surface, wherein in the course of growing the plurality of island-like Group III nitride crystal nuclei, a temperature is set to 875° C. or more and a nucleation density is set to 1*106/cm2 or less, and in the course of growing the first Group III nitride crystal and growing the second Group III nitride crystal, immersion of the Group III nitride seed crystal in the melt and pulling up from the melt are repeated a plurality of times.

公开(公告)号：US20200263317A1

公开(公告)日：2020-08-20

申请号：US16783229

申请日：2020-02-06

Applicant: OSAKA UNIVERSITY ,  Panasonic Corporation

Inventor： Yusuke MORI ,  Masayuki IMANISHI ,  Masashi YOSHIMURA ,  Kousuke MURAKAMI ,  Shinsuke KOMATSU ,  Masahiro TADA ,  Yoshio OKAYAMA

IPC: C30B19/12 ,  C30B19/02 ,  C30B29/40

Abstract: A method of manufacturing a group-III nitride crystal includes: a seed crystal preparation step of preparing a plurality of dot-shaped group-III nitrides on a substrate as a plurality of seed crystals for growth of a group-III nitride crystal; and a crystal growth step of bringing surfaces of the seed crystals into contact with a melt containing an alkali metal and at least one group-III element selected from gallium, aluminum, and indium in an atmosphere containing nitrogen and thereby reacting the group-III element with the nitrogen in the melt to grow the group-III nitride crystal.

公开(公告)号：US20190271096A1

公开(公告)日：2019-09-05

申请号：US16243321

申请日：2019-01-09

Applicant: OSAKA UNIVERSITY ,  Panasonic Corporation

Inventor： Yusuke MORI ,  Masayuki IMANISHI ,  Masashi YOSHIMURA ,  Kousuke MURAKAMI ,  Yoshio OKAYAMA

IPC: C30B19/02 ,  C30B29/40 ,  C30B19/10

Abstract: A production method for a group III nitride crystal, the production method includes: preparing a plurality of group III nitride pieces as a plurality of seed crystals on a substrate, and growing a group III nitride crystal by bringing a surface of each of the seed crystals into contact with a melt that comprises at least one group III element selected from gallium, aluminum, and indium, and an alkali metal in an atmosphere comprising nitrogen, and thereby reacting the group III element and the nitrogen in the melt, wherein the step of growing a group III nitride crystal includes: growing a plurality of first group III nitride crystals whose cross-sections each have a triangular shape or a trapezoidal shape, from the plurality of seed crystals; and growing second group III nitride crystals each in a gap among the plurality of first group III nitride crystals.