公开(公告)号：US20250129514A1

公开(公告)日：2025-04-24

申请号：US18990573

申请日：2024-12-20

Applicant: PANASONIC HOLDINGS CORPORATION ,  OSAKA UNIVERSITY

Inventor： Tomio YAMASHITA ,  Yoshio OKAYAMA ,  Yusuke MORI ,  Masashi YOSHIMURA ,  Masayuki IMANISHI ,  Kousuke MURAKAMI

IPC: C30B25/20 ,  C30B29/40 ,  C30B29/66

Abstract: A method for manufacturing a Group III nitride crystal, the method including: bringing a surface of a Group III nitride seed crystal into contact with a melt including at least one Group III element selected from among gallium, aluminum, and indium and an alkali metal in an atmosphere containing nitrogen to cause the Group III element and the nitrogen to react with each other in the melt to grow a Group III nitride crystal on the Group III nitride seed crystal, the method includes: growing a plurality of island-like Group III nitride crystal nuclei on the surface of the Group III nitride seed crystal; growing a first Group III nitride crystal having an inverted triangular shape or a trapezoidal shape in section from each of the plurality of island-like Group III nitride crystal nuclei; and growing a second Group III nitride crystal such that the second Group III nitride crystal fills a depression of the first Group III nitride crystal to form the second Group III nitride crystal having a flat surface, wherein in the course of growing the plurality of island-like Group III nitride crystal nuclei, a temperature is set to 875° C. or more and a nucleation density is set to 1*106/cm2 or less, and in the course of growing the first Group III nitride crystal and growing the second Group III nitride crystal, immersion of the Group III nitride seed crystal in the melt and pulling up from the melt are repeated a plurality of times.

公开(公告)号：US20240352623A1

公开(公告)日：2024-10-24

申请号：US18756348

申请日：2024-06-27

Applicant: Panasonic Holdings Corporation

Inventor： Yusuke MORI ,  Masashi YOSHIMURA ,  Masayuki IMANISHI ,  Akira KITAMOTO ,  Junichi TAKINO ,  Tomoaki SUMI ,  Yoshio OKAYAMA

IPC: C30B29/40 ,  C30B25/02 ,  C30B33/08

CPC classification number: C30B29/406 ,  C30B33/08 ,  C30B25/02

Abstract: A group-III nitride substrate includes: a first region having a first impurity concentration in a polished surface; and a second region having a second impurity concentration lower than the first impurity concentration in the polished surface, wherein a first dislocation density of the first region is lower than a second dislocation density of the second region.

公开(公告)号：US20220411964A1

公开(公告)日：2022-12-29

申请号：US17846768

申请日：2022-06-22

Applicant: Panasonic Holdings Corporation

Inventor： Yusuke MORI ,  Masashi YOSHIMURA ,  Masayuki IMANISHI ,  Shigeyoshi USAMI ,  Junichi TAKINO ,  Shunichi MATSUNO

IPC: C30B29/40 ,  C30B23/06 ,  C30B23/00

Abstract: A manufacturing method for a group-III nitride crystal, the manufacturing method includes: preparing a seed substrate; increasing temperature of the seed substrate placed in a nurturing chamber; and supplying a group-III element oxide gas produced in a raw material chamber connected to the nurturing chamber by a connecting pipe and a nitrogen element-containing gas into the nurturing chamber to grow a group-III nitride crystal on the seed substrate, wherein a flow amount y of a carrier gas supplied into the raw material chamber at the temperature increase step satisfies following two relational equations (I) and (II), y

公开(公告)号：US20220325437A1

公开(公告)日：2022-10-13

申请号：US17717446

申请日：2022-04-11

Applicant: Panasonic Holdings Corporation

Inventor： Yusuke MORI ,  Masashi YOSHIMURA ,  Masayuki IMANISHI ,  Shigeyoshi USAMI ,  Akira KITAMOTO ,  Junichi TAKINO

IPC: C30B25/18 ,  C30B29/40 ,  C30B29/66

Abstract: A method of manufacturing a group III nitride crystal includes: preparing a seed substrate; causing surface roughness on the surface of the seed substrate; and supplying a group III element oxide gas and a nitrogen element-containing gas to grow a group III nitride crystal on the seed substrate.

公开(公告)号：US20230323563A1

公开(公告)日：2023-10-12

申请号：US18209840

申请日：2023-06-14

Applicant: Panasonic Holdings Corporation

Inventor： Yusuke MORI ,  Masashi YOSHIMURA ,  Masayuki IMANISHI ,  Akira KITAMOTO ,  Junichi TAKINO ,  Tomoaki SUMI ,  Yoshio OKAYAMA

IPC: C30B29/40 ,  C30B33/08

CPC classification number: C30B29/406 ,  C30B25/02 ,  C30B33/08

Abstract: A group-III nitride substrate includes: a first region having a first impurity concentration in a polished surface; and a second region having a second impurity concentration lower than the first impurity concentration in the polished surface, wherein a first dislocation density of the first region is lower than a second dislocation density of the second region.

公开(公告)号：US20220411962A1

公开(公告)日：2022-12-29

申请号：US17848927

申请日：2022-06-24

Applicant: Panasonic Holdings Corporation

Inventor： Yusuke MORI ,  Masashi YOSHIMURA ,  Masayuki IMANISHI ,  Shigeyoshi USAMI ,  Junichi TAKINO ,  Masayuki HOTEIDA ,  Shunichi MATSUNO

IPC: C30B25/16 ,  C30B29/40 ,  C30B25/14 ,  C23C16/30 ,  C23C16/455

Abstract: A manufacturing apparatus for a group-III nitride crystal, the manufacturing apparatus includes: a raw material chamber that produces therein a group-III element oxide gas; and a nurturing chamber in which a group-III element oxide gas supplied from the raw material chamber and a nitrogen element-containing gas react therein to produce a group-III nitride crystal on a seed substrate, wherein an angle that is formed by a direction along a shortest distance between a forward end of a group-III element oxide gas supply inlet to supply the group-III element oxide gas into the nurturing chamber and an outer circumference of the seed substrate placed in the nurturing chamber, and a surface of the seed substrate is denoted by “θ”, wherein a diameter of the group-Ill element oxide gas supply inlet is denoted by “S”, wherein a distance between a surface, on which the seed substrate is placed, of a substrate susceptor that holds the seed substrate and a forward end of a first carrier gas supply inlet to supply a first carrier gas into the nurturing chamber is denoted by “L1”, wherein a distance between the forward end of the first carrier gas supply inlet and the forward end of the group-III element oxide gas supply inlet is denoted by “M1”, wherein a diameter of the seed substrate is denoted by “k”, and wherein following Eqs. (1) to (4), 0°

公开(公告)号：US20220341056A1

公开(公告)日：2022-10-27

申请号：US17725958

申请日：2022-04-21

Applicant: Panasonic Holdings Corporation

Inventor： Yusuke MORI ,  Masashi YOSHIMURA ,  Masayuki IMANISHI ,  Shigeyoshi USAMI ,  Akira KITAMOTO ,  Junichi TAKINO ,  Masayuki HOTEIDA ,  Shunichi MATSUNO

IPC: C30B29/38 ,  C30B25/02

Abstract: A group Ill nitride crystal manufacturing apparatus includes a raw material chamber generating a group Ill elemental oxide gas, and a growth chamber allowing the group Ill element oxide gas supplied from the raw material chamber to react with a nitrogen element-containing gas to generate a group III nitride crystal on a seed substrate, and the growth chamber incudes a decomposition promoting part promoting decomposition of the unreacted nitrogen element- containing gas between the seed substrate and an exhaust port for discharging the unreacted group Ill oxide gas and the nitrogen element-containing gas.

公开(公告)号：US20220002904A1

公开(公告)日：2022-01-06

申请号：US17359949

申请日：2021-06-28

Applicant: OSAKA UNIVERSITY ,  Panasonic Corporation

Inventor： Yusuke MORI ,  Masashi YOSHIMURA ,  Masayuki IMANISHI ,  Akira KITAMOTO ,  Junichi TAKINO ,  Tomoaki SUMI ,  Yoshio OKAYAMA

IPC: C30B25/02 ,  H01L21/02 ,  C30B29/40 ,  C23C16/30

Abstract: A method of manufacturing a group III nitride crystal according to a first aspect includes: preparing a seed substrate; generating a group III element oxide gas; supplying the group III element oxide gas; supplying a nitrogen element-containing gas; supplying an oxidizing gas containing nitrogen element containing at least one selected from the group consisting of NO gas, NO2 gas, N2O gas, and N2O4 gas; and growing the group III nitride crystal on the seed substrate.

公开(公告)号：US20200263317A1

公开(公告)日：2020-08-20

申请号：US16783229

申请日：2020-02-06

Applicant: OSAKA UNIVERSITY ,  Panasonic Corporation

Inventor： Yusuke MORI ,  Masayuki IMANISHI ,  Masashi YOSHIMURA ,  Kousuke MURAKAMI ,  Shinsuke KOMATSU ,  Masahiro TADA ,  Yoshio OKAYAMA

IPC: C30B19/12 ,  C30B19/02 ,  C30B29/40

Abstract: A method of manufacturing a group-III nitride crystal includes: a seed crystal preparation step of preparing a plurality of dot-shaped group-III nitrides on a substrate as a plurality of seed crystals for growth of a group-III nitride crystal; and a crystal growth step of bringing surfaces of the seed crystals into contact with a melt containing an alkali metal and at least one group-III element selected from gallium, aluminum, and indium in an atmosphere containing nitrogen and thereby reacting the group-III element with the nitrogen in the melt to grow the group-III nitride crystal.

公开(公告)号：US20190271096A1

公开(公告)日：2019-09-05

申请号：US16243321

申请日：2019-01-09

Applicant: OSAKA UNIVERSITY ,  Panasonic Corporation

Inventor： Yusuke MORI ,  Masayuki IMANISHI ,  Masashi YOSHIMURA ,  Kousuke MURAKAMI ,  Yoshio OKAYAMA

IPC: C30B19/02 ,  C30B29/40 ,  C30B19/10

Abstract: A production method for a group III nitride crystal, the production method includes: preparing a plurality of group III nitride pieces as a plurality of seed crystals on a substrate, and growing a group III nitride crystal by bringing a surface of each of the seed crystals into contact with a melt that comprises at least one group III element selected from gallium, aluminum, and indium, and an alkali metal in an atmosphere comprising nitrogen, and thereby reacting the group III element and the nitrogen in the melt, wherein the step of growing a group III nitride crystal includes: growing a plurality of first group III nitride crystals whose cross-sections each have a triangular shape or a trapezoidal shape, from the plurality of seed crystals; and growing second group III nitride crystals each in a gap among the plurality of first group III nitride crystals.