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公开(公告)号：US20150163436A1
公开(公告)日：2015-06-11
申请号：US14626261
申请日：2015-02-19
Inventor： Katsumasa HIJIKATA , Kazuko NISHIMURA , Yutaka ABE
CPC classification number: H04N5/378 , H04N5/374 , H04N5/3745
Abstract: A solid-state imaging device includes: a pixel unit which includes a plurality of pixels arranged in rows and columns and which generates pixel signals according to an amount of incident light; a column analog-to-digital converter (ADC) which is disposed for each of the columns of the pixel unit and which performs digital conversion on each of the pixel signals output from the pixels in the column; a timing control unit which generates a control signal for controlling the digital conversion performed by the column ADC; and a logic swing and delay adjusting circuit which is disposed in a signal path for supplying the control signal from the timing control unit to the column ADC and which at least either reduces an amplitude of the control signal or delays the control signal.
Abstract translation: 固态成像装置包括：像素单元，其包括以行和列排列的多个像素，并且根据入射光的量生成像素信号; 列模拟数字转换器（ADC），其被设置用于像素单元的每个列，并对从列中的像素输出的每个像素信号执行数字转换; 定时控制单元，其生成用于控制由列ADC执行的数字转换的控制信号; 以及逻辑摆幅和延迟调整电路，其布置在用于将控制信号从定时控制单元提供给列ADC的信号路径中，并且至少降低控制信号的幅度或延迟控制信号。
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公开(公告)号：US20230253422A1
公开(公告)日：2023-08-10
申请号：US18137916
申请日：2023-04-21
Inventor： Masashi MURAKAMI , Kazuko NISHIMURA , Yutaka ABE , Yoshiyuki MATSUNAGA , Yoshihiro SATO , Junji HIRASE
IPC: H01L27/146
CPC classification number: H01L27/14609 , H01L27/14632 , H01L27/14643 , H01L27/14665 , H01L27/14636 , H10K30/00
Abstract: An imaging device including a semiconductor substrate; a photoelectric converter that converts incident light into a signal charge, the photoelectric converter being stacked on the semiconductor substrate; a node to which the signal charge is input; a transistor having a source and a drain, one of the source and the drain being connected to the node; and a capacitive element connected between the transistor and a voltage source or a ground. The transistor is configured to switch between a first mode and a second mode, a sensitivity in the first mode being different from a sensitivity in the second mode, and in a cross-sectional view, the capacitive element is located between the semiconductor substrate and the photoelectric converter.
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公开(公告)号：US20190051693A1
公开(公告)日：2019-02-14
申请号：US16161903
申请日：2018-10-16
Inventor： Kazuko NISHIMURA , Yutaka ABE , Masashi MURAKAMI , Yoshiyuki MATSUNAGA
IPC: H01L27/146 , H04N5/378 , H04N5/357 , H04N5/363
CPC classification number: H01L27/14643 , H04N5/3575 , H04N5/363 , H04N5/378
Abstract: An imaging device having a pixel including a photoelectric converter that generates electric signal; first transistor having a gate coupled to the photoelectric converter; second transistor one of a source and a drain of which is coupled to one of a source and a drain of the first transistor; third transistor one of a source and a drain of which is coupled to the other of the source and the drain of the second transistor, the other of the source and the drain of the third transistor coupled to the photoelectric converter; first capacitor having a first and second ends, the first end coupled to the other of the source and the drain of the second transistor, first reference voltage applied to the second end; and second capacitor having a third and fourth ends, the third end coupled to the first end, the fourth end coupled to the photoelectric converter.
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公开(公告)号：US20240387570A1
公开(公告)日：2024-11-21
申请号：US18787407
申请日：2024-07-29
Inventor： Masashi MURAKAMI , Kazuko NISHIMURA , Yutaka ABE , Yoshiyuki MATSUNAGA , Yoshihiro SATO , Junji HIRASE
IPC: H01L27/146 , H10K30/00
Abstract: A camera system including a lens; and an imaging device that receives a light through the lens. The imaging device includes: a semiconductor substrate; a photoelectric converter that is configured to convert the light into a signal charge and that is stacked on the semiconductor substrate; a node to which the signal charge is input; a transistor having a source and a drain, one of the source and the drain being connected to the node; and a capacitive element connected between the transistor and a voltage source or a ground. The transistor is configured to switch between a first state and a second state, a sensitivity in the first state being different from a sensitivity in the second state, and in a cross-sectional view, the capacitive element is located between the semiconductor substrate and the photoelectric converter.
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公开(公告)号：US20180166479A1
公开(公告)日：2018-06-14
申请号：US15878902
申请日：2018-01-24
Inventor： Masashi MURAKAMI , Kazuko NISHIMURA , Yutaka ABE , Yoshiyuki MATSUNAGA , Yoshihiro SATO , Junji HIRASE
IPC: H01L27/146 , H01L51/42
CPC classification number: H01L27/14609 , H01L27/14632 , H01L27/14636 , H01L27/14643 , H01L27/14665 , H01L51/42
Abstract: An imaging device includes a unit pixel cell including: a photoelectric converter that generates a signal charge through photoelectric conversion of incident light, and a signal detection circuit that detects an electric signal according to an amount of the signal charge, wherein the signal detection circuit includes: a first transistor that amplifies the electric signal, a gate of the first transistor being connected to the photoelectric converter, a second transistor having a source and a drain, one of the source and the drain being connected to the photoelectric converter, and a first capacitor having a first end and a second end, the first end being connected to the other of the source and the drain of the second transistor, the second end being connected to a first voltage source.
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Patent Agency Ranking
公开(公告)号：US20220320161A1
公开(公告)日：2022-10-06
申请号：US17712873
申请日：2022-04-04
Inventor： Masashi MURAKAMI , Kazuko NISHIMURA , Yutaka ABE , Yoshiyuki MATSUNAGA , Yoshihiro SATO , Junji HIRASE
IPC: H01L27/146
Abstract: An imaging device including: a photoelectric converter that converts incident light into a signal charge; a node to which the signal charge is input; a transistor having a source and a drain, one of the source and the drain being connected to the node; and a capacitive element. The capacitive element including a first electrode, a second electrode and a dielectric film sandwiched between the first electrode and the second electrode, the first electrode being connected to the other of the source and the drain of the transistor, the second electrode being connected to a voltage source or a ground. The transistor is configured to switch a first mode and a second mode, a sensitivity in the first mode being different from a sensitivity in the second mode.
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公开(公告)号：US20200258933A1
公开(公告)日：2020-08-13
申请号：US16859623
申请日：2020-04-27
Inventor： Kazuko NISHIMURA , Yutaka ABE , Masashi MURAKAMI , Yoshiyuki MATSUNAGA
IPC: H01L27/146 , H04N5/378 , H04N5/363 , H04N5/357
Abstract: An imaging device having a pixel including: a photoelectric converter that generates an electric signal through photoelectric conversion of incident light; a first transistor that has a gate coupled to the photoelectric converter and that amplifies the electric signal; and a second transistor that has a gate coupled to the photoelectric converter, one of a source and a drain of the second transistor being coupled to the photoelectric converter. The imaging device further includes a voltage supply circuit configured to supply two or more different voltages to the other of the source and the drain of the second transistor.
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公开(公告)号：US20200036931A1
公开(公告)日：2020-01-30
申请号：US16491555
申请日：2018-02-27
Inventor： Yutaka ABE , Kazuko NISHIMURA , Hiroshi FUJINAKA , Masahiro HIGUCHI , Dai ICHIRYU
IPC: H04N5/3745 , H03M1/56 , H03M1/38 , H04N5/378
Abstract: A solid-state imaging device includes an A/D converter per column. The A/D converter performs a first A/D conversion that (i) refines, using a first comparator, a range including a potential of an analog signal to a range of a potential corresponding to a difference between a first potential and a second potential through a binary search, and further (ii) generates, based on a result of the binary search, a first digital signal being a high-order portion of a digital signal. The A/D converter also performs a second A/D conversion that generates, based on a ramp signal and the result of the binary search, a second digital signal being a low-order portion of a remainder of the digital signal, by measuring a time necessary for an output of a second comparator to be inverted.
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公开(公告)号：US20200014873A1
公开(公告)日：2020-01-09
申请号：US16491123
申请日：2018-02-27
Inventor： Yutaka ABE , Kazuko NISHIMURA , Hiroshi FUJINAKA , Norihiko SUMITANI , Yosuke HIGASHI
Abstract: A solid-state imaging device includes a first A/D converter circuit and a second A/D converter circuit per column. The first A/D converter circuit performs a first A/D conversion that (i) refines, using a first comparator, a range including a potential of an analog signal through a binary search, and (ii) generates, based on a result of the binary search, a first digital signal being a high-order portion of the digital signal. The second A/D converter circuit performs a second A/D conversion that generates a second digital signal being a low-order portion that is a remainder of the digital signal by measuring a time required for an output of the second comparator to be inverted, the second comparator comparing a quantitative relationship between the analog signal refined and a ramp signal.
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10.发明申请公开(公告)号：US20190259793A1
公开(公告)日：2019-08-22
申请号：US16401974
申请日：2019-05-02
Inventor： Masashi MURAKAMI , Kazuko NISHIMURA , Yutaka ABE , Yoshiyuki MATSUNAGA , Yoshihiro SATO , Junji HIRASE
IPC: H01L27/146
Abstract: An imaging device includes a photoelectric converter that includes a first electrode, a second electrode, and a photoelectric conversion layer between the first electrode and the second electrode, a first transistor that has a gate connected to the first electrode, and a first capacitor and a switching element that are connected, in series, between the first electrode and either a voltage source or a ground.
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