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公开(公告)号：US20220097256A1
公开(公告)日：2022-03-31
申请号：US17423630
申请日：2020-01-06
IPC分类号： B28B1/00 , H01L21/02 , H01L21/04 , H01L21/263 , H01L21/268 , H01L21/67 , C01B32/956 , B33Y10/00 , B33Y40/20 , B33Y30/00
摘要： A method for making an article comprising silicon carbide. The method includes producing an article including silicon carbide via additive manufacturing. The method further includes heating via at least one laser beam in a site-selective and locally limited manner a surface of the article so as to cause at least one of ablation and chemical modification of the surface.
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公开(公告)号：US20220002163A1
公开(公告)日：2022-01-06
申请号：US17291505
申请日：2019-11-06
IPC分类号： C01B32/977
摘要： The invention relates to a method for the production of a composition, in particular a SiC precursor granulate, for use in additive manufacturing from a solution or dispersion.
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公开(公告)号：US20220118551A1
公开(公告)日：2022-04-21
申请号：US17288768
申请日：2019-11-05
IPC分类号： B23K26/144 , B33Y10/00 , B33Y70/00 , B33Y80/00 , B23K26/12 , B23K26/14 , B23K26/34 , B22F10/16
摘要： Subject-matter of the invention is a method of applying silicon carbide-containing materials to a substrate surface, and an apparatus for carrying out the method.
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公开(公告)号：US20200303584A1
公开(公告)日：2020-09-24
申请号：US16651384
申请日：2018-09-20
IPC分类号： H01L31/18 , H01L21/02 , H01L21/324 , H01L29/16 , H01L31/028
摘要： The present invention relates to a method for producing a thin nitrogen-free layer of silicon carbide by means of a carbon- and silicon-containing solution or dispersion.
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公开(公告)号：US20200165171A1
公开(公告)日：2020-05-28
申请号：US16620617
申请日：2018-06-04
摘要： The invention relates to a method for producing thin layers of silicon carbide by means of a solution or dispersion containing carbon and silicon.
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