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公开(公告)号：US20240137669A1
公开(公告)日：2024-04-25
申请号：US18403554
申请日：2024-01-03
发明人： SANSHIRO SHISHIDO
IPC分类号： H04N25/76 , H01L27/146 , H04N25/79
CPC分类号： H04N25/76 , H01L27/14612 , H04N25/79
摘要： An imaging device including first and second substrate; first and second connection portion electrically connecting the first and second substrate; a first and second pixel; and a common signal line for the first and second pixel. Each of the first and second pixels includes: a photoelectric converter that converts incident light into a signal charge, and a first transistor that outputs a signal corresponding to the signal charge to the common signal line. The first substrate includes the photoelectric converter and first transistor of the first and second pixels. The second substrate includes: a first line transmitting a voltage to the first transistor of the first and second pixel, and a voltage source coupled to the first transistor of the first pixel, via the first line and the first connection portion, and coupled to the first transistor of the second pixel, via the first line and the second connection portion.
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公开(公告)号：US20220217294A1
公开(公告)日：2022-07-07
申请号：US17705224
申请日：2022-03-25
摘要： An imaging device includes: a first pixel array including a first photoelectric converter and first pixel electrodes connected to the first photoelectric converter; and a second pixel array including a second photoelectric converter and second pixel electrodes connected to the second photoelectric converter. The first pixel array and the second pixel array are stacked one on another. In a plan view, an area of an overlapping region defined by overlapping between the first pixel electrodes and a corresponding second pixel electrode of the second pixel electrodes is smaller than an area of a remaining region obtained by excluding the overlapping region from the corresponding second pixel electrode.
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公开(公告)号：US20210313399A1
公开(公告)日：2021-10-07
申请号：US17347460
申请日：2021-06-14
摘要： An imaging device includes a first pixel and a second pixel adjacent to the first pixel. Each of the first pixel and the second pixel includes a first electrode, a second electrode positioned on or above the first electrode and facing the first electrode, a photoelectric conversion layer positioned between the first electrode and the second electrode, and a first charge-blocking layer positioned between the first electrode and the photoelectric conversion layer. The first charge-blocking layer of the first pixel is separated from the first charge-blocking layer of the second pixel. The photoelectric conversion layer is disposed continuously to the first pixel and the second pixel. An area of the first charge-blocking layer of the first pixel is larger than an area of the first electrode of the first pixel in plan view.
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公开(公告)号：US20210202582A1
公开(公告)日：2021-07-01
申请号：US17205061
申请日：2021-03-18
摘要： An imaging device includes: a semiconductor substrate; pixel electrodes located above the semiconductor substrate and each electrically connected to the semiconductor substrate; a counter electrode located above the pixel electrodes; a first photoelectric conversion layer located between the counter electrode and the pixel electrodes; and at least one first light-shielding body located in or above the first photoelectric conversion layer. The first photoelectric conversion layer contains a semiconducting carbon nanotube that absorbs light in a first wavelength range and an organic molecule that covers the semiconducting carbon nanotube, absorbs light in a second wavelength range, and emits fluorescence in a third wavelength range. The at least one first light-shielding body absorbs or reflects light with a wavelength in at least part of the second wavelength range.
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5.发明申请公开(公告)号：US20180227524A1
公开(公告)日：2018-08-09
申请号：US15872016
申请日：2018-01-16
发明人： SHINICHI MACHIDA , TAKEYOSHI TOKUHARA , MANABU NAKATA , SANSHIRO SHISHIDO , MASAAKI YANAGIDA , MASUMI IZUCHI
CPC分类号： H04N5/378 , H01L27/307 , H01L51/0046 , H01L51/4246 , H04N5/374 , Y02E10/549
摘要： An imaging apparatus includes a unit pixel including a pixel electrode, a charge accumulation region electrically connected to the pixel electrode, and a signal detection circuit electrically connected to the charge accumulation region; a counter electrode facing the pixel electrode; a photoelectric conversion layer disposed between the electrodes; and a voltage supply circuit configured to selectively apply any one of first, second, and third voltages between the electrodes. The photoelectric conversion layer exhibits first and second wavelength sensitivity characteristics in a wavelength range when the voltage supply circuit applies the first and second voltages between the electrodes, respectively, and becomes insensitive to light in the wavelength range when the voltage supply circuit applies the third voltage between the electrodes.
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公开(公告)号：US20180205896A1
公开(公告)日：2018-07-19
申请号：US15867986
申请日：2018-01-11
发明人： KAZUKO NISHIMURA , SANSHIRO SHISHIDO , HIDENARI KANEHARA , TAKAYOSHI YAMADA , MASASHI MURAKAMI , YASUNORI INOUE
CPC分类号： H04N5/35518 , H01L27/14643 , H01L27/14665 , H01L29/42372 , H04N5/355 , H04N5/35563 , H04N5/363 , H04N5/378
摘要： An imaging device includes: a first imaging cell including a first photoelectric converter that generates a first signal by photoelectric conversion, and a first signal processing circuit that is electrically connected to the first photoelectric converter and detects the first signal; and a second imaging cell including a second photoelectric converter that generates a second signal by photoelectric conversion, and a second signal processing circuit that is electrically connected to the second photoelectric converter and detects the second signal. Sensitivity of the first imaging cell is higher than sensitivity of the second imaging cell. The first signal processing circuit has a circuit configuration different from the second signal processing circuit. An operation frequency of the first signal processing circuit is different from an operation frequency of the second signal processing circuit.
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公开(公告)号：US20220303482A1
公开(公告)日：2022-09-22
申请号：US17832301
申请日：2022-06-03
发明人： SANSHIRO SHISHIDO
IPC分类号： H04N5/374 , H04N5/369 , H01L27/146
摘要： An imaging device includes a first substrate, and a second substrate stacked on the first substrate. A first connection portion and a second connection portion are between the first substrate and the second substrate. A first pixel and a second pixel each include a photoelectric converter that converts incident light into a signal charge, and a detection circuit that detects the signal charge. The first substrate includes the photoelectric converter and the detection circuit. The second substrate includes a first line, and a voltage source that is coupled to the detection circuit of the first pixel, via the first line and the first connection portion, and that is coupled to the detection circuit of the second pixel, via the first line and the second connection portion.
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公开(公告)号：US20210043689A1
公开(公告)日：2021-02-11
申请号：US17083376
申请日：2020-10-29
IPC分类号： H01L27/30
摘要： An imaging device includes a semiconductor substrate including a first surface receiving light from outside, and a second surface opposite to the first surface, a first transistor on the second surface, and a photoelectric converter facing the second surface and receiving light through the semiconductor substrate. The semiconductor substrate is a silicon or silicon compound substrate. The photoelectric converter includes a first electrode electrically connected to the first transistor, a second electrode, and a photoelectric conversion layer located between the first and second electrodes and containing a material absorbing light having a wavelength 1.1 μm or longer. The first electrode is located between the second surface and the photoelectric conversion layer. A spectral sensitivity of the material in a region of 1.0 μm or longer and shorter than 1.1 μm is 0% to 5% of the maximum value of a spectral sensitivity of the material in 1.1 μm or longer.
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公开(公告)号：US20190229150A1
公开(公告)日：2019-07-25
申请号：US16251599
申请日：2019-01-18
摘要： An imaging device includes: a semiconductor substrate including a pixel region in which pixels are arranged and a peripheral region adjacent to the pixel region; an insulating layer that covers the pixel region and the peripheral region; a first electrode located on the insulating layer above the pixel region; a photoelectric conversion layer that covers the first electrode; a second electrode that covers the photoelectric conversion layer; detection circuitry located in the pixel region and connected to the first electrode; peripheral circuitry located in the peripheral region and connected to the detection circuitry; and a third electrode located on the insulating layer above the peripheral region. The second electrode extends above the peripheral region, and the second electrode includes a connection region in which the second electrode is connected to the third electrode, the connection region overlapping the peripheral circuitry in plan view.
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公开(公告)号：US20190098224A1
公开(公告)日：2019-03-28
申请号：US16131270
申请日：2018-09-14
CPC分类号： H04N5/243 , G02B5/205 , H01L27/307 , H04N5/2254 , H04N5/2352 , H04N5/238 , H04N5/351
摘要： An imaging device includes a photoelectric converter including a pixel electrode, a counter electrode, and a photoelectric conversion layer between the pixel electrode and the counter electrode, the photoelectric conversion layer converting incident light into an electric charge; and a voltage application circuit that applies a first voltage between the pixel electrode and the counter electrode in a first frame and that applies a second voltage between the pixel electrode and the counter electrode in a second frame different from the first frame, the first voltage being a constant voltage, the second voltage being a pulse-shaped voltage.
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