公开(公告)号：US11081725B2

公开(公告)日：2021-08-03

申请号：US16366412

申请日：2019-03-27

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Kazuhide Ichikawa ,  Yu Nishitani ,  Hideaki Adachi ,  Takuji Tsujita ,  Daisuke Matsunaka

IPC: H01M10/054 ,  H01M10/0562 ,  H01M4/13 ,  H01M4/36 ,  H01M10/058 ,  H01M4/02

Abstract: A solid electrolyte comprises a compound represented by a formula MgxAl2-yMyOz, where M is at least one selected from the group consisting of Si, Ge, Sn, Pb, Ti, and Zr; 0

公开(公告)号：US10712156B2

公开(公告)日：2020-07-14

申请号：US16084813

申请日：2017-03-16

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Ryouichi Takayama ,  Hideaki Adachi ,  Takakiyo Harigai ,  Yoshiaki Tanaka

IPC: G01C19/56 ,  G01C19/5628 ,  G01J1/02 ,  H01L37/02 ,  H01L41/08 ,  H01L41/187 ,  H01L41/047 ,  H01L41/113 ,  H01L41/319

Abstract: Provided are a structure including: a substrate; a first layer provided on the substrate; a second layer provided on the first layer; and a third layer provided on the second layer, in which the first layer is a layer containing a compound represented by a chemical formula MIn2O4 using M as a metal element, the second layer is a metal layer having a face-centered cubic structure, and the third layer is a ferroelectric film, and a sensor using the structure.

公开(公告)号：US10697090B2

公开(公告)日：2020-06-30

申请号：US15872967

申请日：2018-01-16

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Hideaki Adachi ,  Ryouichi Takayama ,  Takakiyo Harigai ,  Yoshiaki Tanaka

IPC: C30B29/68 ,  H01L41/312 ,  H01L41/27 ,  H01L41/319 ,  C30B29/20 ,  C30B23/02 ,  C30B29/32 ,  C30B29/26 ,  C30B29/16 ,  H01L41/313 ,  H01L41/316 ,  H01F41/18 ,  H01L41/187

Abstract: The present invention provides a thin film structural body comprising a sapphire substrate having a principal plane of a {11-26} plane and a first epitaxial thin film which is grown directly on the principal plane of the sapphire substrate and has a principal plane of a {100} plane. As one example, in a fabrication method of the thin film structural body, a first epitaxial thin film is grown on a principal plane of a {11-26} plane of the sapphire substrate. The grown first epitaxial thin film has a principal plane of a {100} plane.