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    Shock recording device
    7.
    发明授权
    Shock recording device 有权

    公开(公告)号：US09939314B2

    公开(公告)日：2018-04-10

    申请号：US14623081

    申请日：2015-02-16

    Applicant: Panasonic Intellectual Property Management Co., Ltd.

    Inventor： Yukihiro Kaneko ,  Michihito Ueda ,  Yu Nishitani

    IPC: G01H11/06 ,  G01H11/08 ,  G01L5/00 ,  G01P1/12 ,  G01P15/03

    CPC classification number: G01H11/06 ,  G01L5/0052 ,  G01P1/127 ,  G01P15/036

    Abstract: The present invention provides a shock recording device includes: an electric power source; a vibration energy harvester including a first electrode and a second electrode, the vibration energy harvester converting an energy of a shock applied thereto into a potential difference between the first electrode and the second electrode; a first transistor including a first gate electrode, a first source electrode, and a first drain electrode, the first transistor further including a stacked structure of a ferroelectric layer and a semiconductor layer; and a second transistor including a second gate electrode, a second source electrode, and a second drain electrode. The second gate electrode is electrically connected to the first electrode. The second drain electrode is electrically connected to the electric power source. The second source electrode is electrically connected to the first gate electrode. The first source electrode is electrically connected to the second electrode.

    Solar cell
    8.
    发明授权
    Solar cell 有权

    公开(公告)号：US11935971B2

    公开(公告)日：2024-03-19

    申请号：US17821818

    申请日：2022-08-24

    Applicant: Panasonic Intellectual Property Management Co., Ltd.

    Inventor： Tomoyasu Yokoyama ,  Ryosuke Kikuchi ,  Yu Nishitani

    IPC: H01L31/0224 ,  H01L31/0264

    CPC classification number: H01L31/022425 ,  H01L31/0264

    Abstract: A solar cell according to the present disclosure includes a first electrode, a second electrode, a photoelectric conversion layer disposed between the first electrode and the second electrode, and an electron transport layer disposed between the first electrode and the photoelectric conversion layer. At least one electrode selected from the group consisting of the first electrode and the second electrode has a light-transmitting property. The photoelectric conversion layer contains a perovskite compound composed of a monovalent cation, a divalent cation, and a halogen anion. The electron transport layer contains a metal oxynitride having electron conductivity. The metal oxynitride has an electrical conductivity of greater than or equal to 1×10−7 S/cm.

    Neural network circuit and learning method thereof
    10.
    发明授权
    Neural network circuit and learning method thereof 有权

    公开(公告)号：US09818057B2

    公开(公告)日：2017-11-14

    申请号：US14611145

    申请日：2015-01-30

    Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

    Inventor： Yu Nishitani ,  Yukihiro Kaneko ,  Michihito Ueda

    IPC: G06N3/04 ,  G06N3/08 ,  G06N3/063

    CPC classification number: G06N3/04 ,  G06N3/049 ,  G06N3/063 ,  G06N3/08

    Abstract: In a neural network circuit element, a neuron circuit includes a waveform generating circuit for generating an analog pulse voltage, and a switching pulse voltage which is input as a first input signal to another neural network circuit element; a synapse circuit is configured such that the analog pulse voltage generated in the neuron circuit of the neural network circuit element including the synapse circuit is input to a third terminal of a variable resistance element of the synapse circuit, for a permissible input period, in the first input signal from another neural network circuit element; and the synapse circuit is configured such that the resistance value of the variable resistance element is changed in response to an electric potential difference between a first terminal and the third terminal, which occurs depending on a magnitude of the analog pulse voltage for the permissible input period.

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