Method of manufacturing solar cell and solar cell

    公开(公告)号:US10546969B2

    公开(公告)日:2020-01-28

    申请号:US14718161

    申请日:2015-05-21

    Abstract: A solar cell is provided that comprising a semiconductor substrate having a first conductivity type; a first semiconductor layer having the first conductivity type, and on a principal surface of the semiconductor substrate; an insulation layer on the first semiconductor layer; a protective layer on the insulation layer; and a second semiconductor layer having a second conductivity type, and on the semiconductor substrate and the protective layer. A recessed region is positioned at a lateral side of the insulation layer, the recessed region formed by recessing a side surface of the insulation layer inward from a side surface of the first semiconductor layer and a side surface of the protective layer, and the second semiconductor layer is positioned in the recessed region above the first semiconductor layer in the recessed region.

    Solar cell
    2.
    发明授权

    公开(公告)号:US10014420B2

    公开(公告)日:2018-07-03

    申请号:US15220394

    申请日:2016-07-27

    Abstract: A solar cell includes: a semiconductor substrate having a light-receiving surface and a back surface; a first-conductivity-type first semiconductor layer on the back surface; a second-conductivity-type second semiconductor layer on the back surface; a first electrode electrically connected to the first semiconductor layer; a second electrode electrically connected to the second semiconductor layer; and an insulating layer in a boundary region between a first-conductivity-type region of the first semiconductor layer and a second-conductivity-type region of the second semiconductor layer. The insulating layer has an inclined side surface adjacent the second-conductivity-type region inclined such that the thickness of the insulating layer decreases with decreasing distance from the second-conductivity-type region. The width of the inclined surface in a direction perpendicular to the thickness direction of the insulating layer and toward the second-conductivity-type region is 10 to 300 times the thickness of the insulating layer in a region excluding the inclined surface.

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