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公开(公告)号:US10546969B2
公开(公告)日:2020-01-28
申请号:US14718161
申请日:2015-05-21
Inventor: Naofumi Hayashi , Takahiro Mishima , Keiichiro Masuko
IPC: H01L21/00 , H01L31/075 , H01L31/0747 , H01L31/0224 , H01L31/18
Abstract: A solar cell is provided that comprising a semiconductor substrate having a first conductivity type; a first semiconductor layer having the first conductivity type, and on a principal surface of the semiconductor substrate; an insulation layer on the first semiconductor layer; a protective layer on the insulation layer; and a second semiconductor layer having a second conductivity type, and on the semiconductor substrate and the protective layer. A recessed region is positioned at a lateral side of the insulation layer, the recessed region formed by recessing a side surface of the insulation layer inward from a side surface of the first semiconductor layer and a side surface of the protective layer, and the second semiconductor layer is positioned in the recessed region above the first semiconductor layer in the recessed region.
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公开(公告)号:US10014420B2
公开(公告)日:2018-07-03
申请号:US15220394
申请日:2016-07-27
Inventor: Masato Shigematsu , Naofumi Hayashi
IPC: H01L31/00 , H01L31/0224 , H01L31/0747 , H01L31/20 , H01L31/18 , H01L31/075
CPC classification number: H01L31/022441 , H01L31/0747 , H01L31/075 , H01L31/1804 , H01L31/20 , Y02E10/547 , Y02P70/521
Abstract: A solar cell includes: a semiconductor substrate having a light-receiving surface and a back surface; a first-conductivity-type first semiconductor layer on the back surface; a second-conductivity-type second semiconductor layer on the back surface; a first electrode electrically connected to the first semiconductor layer; a second electrode electrically connected to the second semiconductor layer; and an insulating layer in a boundary region between a first-conductivity-type region of the first semiconductor layer and a second-conductivity-type region of the second semiconductor layer. The insulating layer has an inclined side surface adjacent the second-conductivity-type region inclined such that the thickness of the insulating layer decreases with decreasing distance from the second-conductivity-type region. The width of the inclined surface in a direction perpendicular to the thickness direction of the insulating layer and toward the second-conductivity-type region is 10 to 300 times the thickness of the insulating layer in a region excluding the inclined surface.
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公开(公告)号:US11114577B2
公开(公告)日:2021-09-07
申请号:US16361679
申请日:2019-03-22
Inventor: Koichi Kubo , Tomohide Yoshida , Mamoru Arimoto , Naofumi Hayashi , Minoru Higuchi
IPC: H01L31/05 , H02S30/10 , H01L31/048 , H02S20/23
Abstract: This photovoltaic power generation device is provided with: a mounting bracket which is fixed to a roof and on which a frame, arranged on the ridge-side end of a solar cell module, and a frame, arranged on the eave-side end of a solar cell module, are mounted; and a fixing bracket which is arranged in the space between the frame and the frame, and which is fixed to the mounting bracket and holds said frames from above.
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公开(公告)号:US20190222170A1
公开(公告)日:2019-07-18
申请号:US16360705
申请日:2019-03-21
Inventor: Koichi Kubo , Naofumi Hayashi , Minoru Higuchi
Abstract: This photovoltaic power generation device is provided with: a mounting bracket which is fixed to a roof and on which a frame, arranged on the ridge-side end of a solar cell module, and a frame, arranged on the eave-side end of a solar cell module, are mounted; and a securing bracket for securing the frames to the mounting bracket. The ridge-side edge of the mounting bracket is inclined in the eaves-ridge direction and the girder direction of the roof.
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公开(公告)号:US20190221696A1
公开(公告)日:2019-07-18
申请号:US16361679
申请日:2019-03-22
Inventor: Koichi Kubo , Tomohide Yoshida , Mamoru Arimoto , Naofumi Hayashi , Minoru Higuchi
IPC: H01L31/05 , H01L31/048 , H02S30/10
CPC classification number: H01L31/05 , H01L31/048 , H02S20/23 , H02S30/10 , Y02B10/12
Abstract: This photovoltaic power generation device is provided with: a mounting bracket which is fixed to a roof and on which a frame, arranged on the ridge-side end of a solar cell module, and a frame, arranged on the eave-side end of a solar cell module, are mounted; and a fixing bracket which is arranged in the space between the frame and the frame, and which is fixed to the mounting bracket and holds said frames from above.
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公开(公告)号:US10121917B2
公开(公告)日:2018-11-06
申请号:US15072903
申请日:2016-03-17
Inventor: Naofumi Hayashi , Takahiro Mishima , Tsuyoshi Takahama , Tsutomu Yamaguchi
IPC: H01L31/00 , H01L31/0224 , H01L31/048 , H01L31/0747 , H01L31/0352 , H01L31/05
Abstract: A solar cell includes: a base substrate that has a principle surface; a first semiconductor layer provided in a first region on the principle surface; a second semiconductor layer provided in a second region on the principle surface; an n-side electrode provided on the first semiconductor layer; a p-side electrode provided on the second semiconductor layer; and grooves that separate the n-side electrode and the p-side electrode from each other. The respective widths of the grooves in a direction in which the n-side electrode and the p-side electrode are spaced apart are set to be wider in the outer peripheral region than in the inner region.
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公开(公告)号:US09705027B2
公开(公告)日:2017-07-11
申请号:US15164874
申请日:2016-05-26
Inventor: Naofumi Hayashi , Mitsuaki Morigami , Masato Shigematsu , Takahiro Mishima
IPC: H01L21/00 , H01L31/20 , H01L31/0747 , H01L31/0224 , H01L31/18
CPC classification number: H01L31/202 , H01L31/022441 , H01L31/022491 , H01L31/0747 , H01L31/1804 , Y02E10/547 , Y02P70/521
Abstract: A solar cell manufacturing method includes: forming a first amorphous semiconductor layer of one conductivity type on a main surface of a semiconductor substrate; forming an insulation layer on the first amorphous semiconductor layer; etching to remove the insulation layer and the first amorphous semiconductor layer in a predetermined first region; forming a second amorphous semiconductor layer of an other conductivity type on the insulation layer after the etching, the other conductivity type being different from the one conductivity type; and etching to remove the second amorphous semiconductor layer in a predetermined second region, wherein the etching to remove the insulation layer and the first amorphous semiconductor layer in a predetermined first region includes: applying an etching paste to the insulation layer in the predetermined first region; and etching to remove the insulation layer and the first amorphous semiconductor layer in the predetermined first region using the etching paste.
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