公开(公告)号：US20150171173A1

公开(公告)日：2015-06-18

申请号：US14636163

申请日：2015-03-02

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： HIDEKAZU UMEDA ,  MASAHIRO ISHIDA ,  TETSUZO UEDA ,  DAISUKE UEDA

IPC: H01L29/205 ,  H01L29/36 ,  H01L29/778 ,  H01L29/20

CPC classification number: H01L29/205 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L29/1066 ,  H01L29/155 ,  H01L29/2003 ,  H01L29/36 ,  H01L29/7786 ,  H01L29/86

Abstract: A nitride semiconductor structure of the present disclosure comprises a semiconductor substrate, and a layer formed over the semiconductor substrate and comprising plural nitride semiconductor layers. The semiconductor substrate has, from a side thereof near the layer comprising the plural nitride semiconductor layers, a surface region and an internal region in this order. The surface region has a resistivity of 0.1 Ωcm or more, and the internal region has a resistivity of 1000 Ωcm or more.

Abstract translation: 本公开的氮化物半导体结构包括半导体衬底和形成在半导体衬底上并包括多个氮化物半导体层的层。 半导体衬底从其包括多个氮化物半导体层的层的一侧开始依次具有表面区域和内部区域。 表面区域的电阻率为0.1Ω·cm〜（cm）以上，内部区域的电阻率为1000ΩΩ·cm以上。

公开(公告)号：US20150222263A1

公开(公告)日：2015-08-06

申请号：US14690426

申请日：2015-04-19

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： SHUICHI NAGAI ,  YASUFUMI KAWAI ,  DAISUKE UEDA

IPC: H03K17/689 ,  H03K17/687 ,  H03K17/16

CPC classification number: H03K17/689 ,  H02M1/08 ,  H03K17/163 ,  H03K17/165 ,  H03K17/6877 ,  H03K17/691 ,  H03K2217/009

Abstract: A gate drive circuit in an aspect of the present disclosure includes a modulated signal generation circuit that generates a first modulated signal, a first isolator that isolatedly transmits the first modulated signal, and a first rectifier circuit that generates a first output signal by rectifying the first modulated signal. The first modulated signal includes a first amplitude, a second amplitude larger than the first amplitude, and a third amplitude larger than the second amplitude. The first output signal includes a first output voltage value according to the first amplitude, a second output voltage value according to the second amplitude, and a third output voltage value according to the third amplitude.

Abstract translation: 本公开的一个方面的栅极驱动电路包括产生第一调制信号的调制信号产生电路，隔离发送第一调制信号的第一隔离器，以及通过对第一调制信号进行整流产生第一输出信号的第一整流电路 调制信号。 第一调制信号包括第一幅度，比第一幅度大的第二幅度和大于第二幅度的第三幅度。 第一输出信号包括根据第一幅度的第一输出电压值，根据第二幅度的第二输出电压值和根据第三幅度的第三输出电压值。

公开(公告)号：US20150214853A1

公开(公告)日：2015-07-30

申请号：US14601592

申请日：2015-01-21

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： SHUICHI NAGAI ,  YASUHIRO YAMADA ,  DAISUKE UEDA

IPC: H02M5/293

CPC classification number: H02M5/297 ,  H02M2005/2932

Abstract: A semiconductor device includes a semiconductor switch, a first rectifier circuit, and a second rectifier circuit. The semiconductor switch, the first rectifier circuit, and the second rectifier circuit are integrated on a common board. On the board, a first output terminal of the first rectifier circuit is coupled to a first gate terminal of the semiconductor switch, and a first output reference terminal of the first rectifier circuit is coupled to a first source terminal of the semiconductor switch. On the board, a second output terminal of the second rectifier circuit is coupled to a second gate terminal of the semiconductor switch, and a second output reference terminal of the second rectifier circuit is coupled to a second source terminal of the semiconductor switch.

Abstract translation: 半导体器件包括半导体开关，第一整流器电路和第二整流器电路。 半导体开关，第一整流电路和第二整流电路集成在公共板上。 在板上，第一整流电路的第一输出端耦合到半导体开关的第一栅极端，第一整流电路的第一输出基准端耦合到半导体开关的第一源端。 在板上，第二整流电路的第二输出端耦合到半导体开关的第二栅极端子，第二整流电路的第二输出参考端耦合到半导体开关的第二源端。

公开(公告)号：US20150340401A1

公开(公告)日：2015-11-26

申请号：US14714292

申请日：2015-05-17

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： SHIGEO YOSHII ,  JUNJI HIRASE ,  DAISUKE UEDA

IPC: H01L27/146 ,  H01L49/02 ,  H01L29/861 ,  H01L29/786

CPC classification number: H01L29/861 ,  H01L27/1225 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14665 ,  H01L27/307 ,  H01L28/40 ,  H01L29/7869 ,  H01L29/8613

Abstract: An imaging device includes a semiconductor substrate comprising a first semiconductor; and a unit pixel cell provided to the semiconductor substrate. The unit pixel cell includes: a photoelectric converter that includes a pixel electrode and a photoelectric conversion layer, the photoelectric converter converting incident light into electric charges; a charge detection transistor that includes a part of the semiconductor substrate and detects the electric charges; and a reset transistor that includes at least a part of a first semiconductor layer comprising a second semiconductor and initializes a voltage of the photoelectric converter. The pixel electrode is located above the charge detection transistor. The reset transistor is located between the charge detection transistor and the pixel electrode. A band gap of the second semiconductor is larger than a band gap of the first semiconductor.

Abstract translation: 一种成像装置包括：包括第一半导体的半导体衬底; 以及设置到半导体衬底的单位像素单元。 单位像素单元包括：光电转换器，包括像素电极和光电转换层，光电转换器将入射光转换成电荷; 电荷检测晶体管，其包括半导体衬底的一部分并检测电荷; 以及复位晶体管，其包括包括第二半导体的第一半导体层的至少一部分并初始化所述光电转换器的电压。 像素电极位于电荷检测晶体管的上方。 复位晶体管位于电荷检测晶体管和像素电极之间。 第二半导体的带隙大于第一半导体的带隙。

公开(公告)号：US20150214197A1

公开(公告)日：2015-07-30

申请号：US14675748

申请日：2015-04-01

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： HIDEKI OHMAE ,  JUNICHI HIBINO ,  ATSUSHI YAMADA ,  DAISUKE UEDA

IPC: H01L25/13 ,  F21K99/00 ,  H01L33/38 ,  F21V23/00

CPC classification number: H01L25/13 ,  F21V23/002 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/0753 ,  H01L33/387 ,  H01L33/62 ,  H01L2224/45015 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48137 ,  H01L2224/48139 ,  H01L2224/4847 ,  H01L2224/4903 ,  H01L2924/00014 ,  H01L2924/12042 ,  H01L2924/15788 ,  H01L2924/00 ,  H01L2924/2076 ,  H01L2224/05599

Abstract: A light-emitting device includes: a plurality of LED chips each having a light-emitting region, and a first electrode and a second electrode that are electrically connected to light-emitting region; a plurality of substrates each being provided on each of the plurality of LED chips; a plurality of through-holes each penetrating through each of the plurality of substrates; and, a plurality of wires each passing through a first through-hole penetrated through a first substrate of the plurality of the substrates and a second through-hole penetrated through a second substrate adjacent to the first substrate. The one of the plurality of the wires is electrically connected the first electrode or the second electrode of a first LED chip corresponding to the first substrate, to the first electrode or the second electrode of a second LED chip corresponding to the second substrate.

Abstract translation: 发光装置包括：具有发光区域的多个LED芯片和与发光区域电连接的第一电极和第二电极; 多个基板，分别设置在所述多个LED芯片的每一个上; 多个贯通所述多个基板中的每一个的通孔; 并且，穿过穿过多个基板的第一基板的第一通孔的多根电线和穿过与第一基板相邻的第二基板的第二通孔。 多个导线中的一个电线将与第一基板对应的第一LED芯片的第一电极或第二电极电连接到对应于第二基板的第二LED芯片的第一电极或第二电极。