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公开(公告)号:US20200003625A1
公开(公告)日:2020-01-02
申请号:US16566868
申请日:2019-09-10
Inventor: NAOKI TAMBO , KOUHEI TAKAHASHI , TAKASHI KAWASAKI , KUNIHIKO NAKAMURA , MASAKI FUJIKANE , YASUYUKI NAITO
Abstract: An infrared sensor according to the present disclosure includes base substrate, infrared receiver, and beam. The beam includes connective portion connecting with the base substrate and/or a member on the base substrate, and separated portion separated from the base substrate. The infrared receiver and the beam are joined with each other at the separated portion. The infrared receiver is supported by the beam in a state where the infrared receiver is separated from the base substrate. The beam includes junction part joined to the infrared receiver, and section positioned between junction part and the connective portion, and section includes a phononic crystal structure defined by a plurality of through holes orderly arranged. The crystal structure includes a first domain and a second domain that are phononic crystal domains. The first domain includes, in a plan view, a plurality of through holes arranged orderly in a first direction, while the second domain includes, in a plan view, a plurality of through holes arranged orderly in a second direction that is different from the first direction. The infrared sensor according to the present disclosure has enhanced responsivity.
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公开(公告)号:US20190178718A1
公开(公告)日:2019-06-13
申请号:US16193152
申请日:2018-11-16
Inventor: TAKASHI KAWASAKI , KOUHEI TAKAHASHI , NAOKI TAMBO , YASUYUKI NAITO
Abstract: An infrared sensor comprises a base substrate including a recess, a bolometer infrared ray receiver, and a Peltier device. The bolometer infrared ray receiver comprises a resistance variable layer, a bolometer first beam, and a bolometer second beam. The Peltier device comprises a Peltier first beam formed of a p-type semiconductor material and a Peltier second beam formed of an n-type semiconductor material. The Peltier device is in contact with a back surface of the bolometer infrared ray receiver. One end of each of the bolometer first beam, the bolometer second beam, the Peltier first beam, and the Peltier second beam is connected to the base substrate. The bolometer infrared ray receiver and the Peltier device are suspended above the base substrate. Each of the bolometer first beam, the bolometer second beam, the Peltier first beam, and the Peltier second beam has a phononic crystal structure including a plurality of through holes arranged regularly.
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公开(公告)号:US20170356806A1
公开(公告)日:2017-12-14
申请号:US15497353
申请日:2017-04-26
Inventor: KOUHEI TAKAHASHI , TAKASHI KAWASAKI , YASUYUKI NAITO , MORIO TOMIYAMA
CPC classification number: G01J5/02 , G01J5/023 , G01J5/046 , G01J5/06 , G01J5/12 , G01J5/14 , G01J5/20 , G01J5/22 , G01J2005/123
Abstract: An infrared sensor is formed in such a manner that an infrared receiver and a base substrate are spaced with a beam made of a thin-film phononic crystal in which through holes are arranged periodically. The beam made of a phononic crystal is formed in such a manner that a period P of through holes increases at arbitrary intervals in a direction from the infrared receiver toward the base substrate.
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公开(公告)号:US20240177940A1
公开(公告)日:2024-05-30
申请号:US18553176
申请日:2022-04-12
Inventor: SHINJI KONDOU , KAZUYA YAMASAKI , TAKASHI KAWASAKI , KOJI YOKOYAMA , HITOSHI ISHIMOTO , YOSHIHISA NAGASAKI , YUJI MIYACHI
CPC classification number: H01G9/028 , H01G9/0036 , H01G9/15
Abstract: An electrolytic capacitor includes an anode body, a dielectric layer covering the anode body, a first solid electrolyte layer covering the dielectric layer, and a second solid electrolyte layer covering the first solid electrolyte layer. The first solid electrolyte layer contains a first conductive polymer including polythiophene as a basic skeleton. The second solid electrolyte layer contains a second conductive polymer including polypyrrole as a basic skeleton. A conductivity of the first solid electrolyte layer is less than or equal to 2 S/cm.
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