-
公开(公告)号：US20210313504A1
公开(公告)日：2021-10-07
申请号：US17349730
申请日：2021-06-16
Inventor： MASAKI FUJIKANE , NAOKI TAMBO , KUNIHIKO NAKAMURA , KOUHEI TAKAHASHI , YASUYUKI NAITO
Abstract: The present disclosure provides a novel multilayer body. The multilayer body of the present disclosure includes a first phononic crystal layer and a second phononic crystal layer disposed on or above the first phononic crystal layer. The first phononic crystal layer has a first phononic crystal structure including a plurality of regularly arranged first through holes. The second phononic crystal layer has a second phononic crystal structure including a plurality of regularly arranged second through holes. The through direction of the plurality of first through holes in the first phononic crystal layer is substantially parallel to the through direction of the plurality of second through holes in the second phononic crystal layer.
-
公开(公告)号：US20210302237A1
公开(公告)日：2021-09-30
申请号：US17347470
申请日：2021-06-14
Inventor： KOUHEI TAKAHASHI , NAOKI TAMBO , KUNIHIKO NAKAMURA , MASAKI FUJIKANE , YASUYUKI NAITO
Abstract: An infrared sensor includes: a base substrate; a bolometer infrared receiver; a first beam; and a second beam. Each of the first and second beams has a connection portion connected to the base substrate and/or a member on the base substrate and a separated portion away from the base substrate, and is physically joined to the infrared receiver at the separated portion. The infrared receiver is supported by the first and second beams to be away from the base substrate. The infrared receiver includes a resistance change portion including a resistance change material the electrical resistance of which changes with temperature. The resistance change portion includes an amorphous semiconductor, and the first and second beams include a crystalline semiconductor made of the same base material as the resistance change material, and is electrically connected to the resistance change portion at the separated portion.
-
公开(公告)号：US20210302236A1
公开(公告)日：2021-09-30
申请号：US17347467
申请日：2021-06-14
Inventor： KOUHEI TAKAHASHI , NAOKI TAMBO , KUNIHIKO NAKAMURA , MASAKI FUJIKANE , YASUYUKI NAITO
Abstract: Each of first and second beams has a connection portion connected to a base substrate and a separated portion away from the base substrate, and is physically joined to an infrared receiver at the separated portion. The infrared receiver is supported by the first and second beams, and includes lower electrode, upper electrode, and a resistance change film. The resistance change film is sandwiched by the lower electrode and upper electrode in a thickness direction, each of the lower and upper electrodes is electrically connected to the resistance change film, the lower and upper electrodes are electrically connected to first wiring and second wiring, respectively, at least one electrode selected from the lower electrode and the upper electrode has a line-and-space structure, and an infrared reflection film is provided at a position on a surface of the base substrate facing the infrared receiver.
-
4.发明申请公开(公告)号：US20170335488A1
公开(公告)日：2017-11-23
申请号：US15589016
申请日：2017-05-08
Inventor： MASAKI FUJIKANE
CPC classification number: C30B29/406 , B01D53/261 , C30B33/005 , C30B33/04 , C30B33/08 , C30B33/12 , E03B3/28 , H01L21/02389 , H01L21/0243 , H01L21/0254 , H01L21/02664
Abstract: A device includes a semiconductor substrate containing gallium nitride and having a crystal face inclined from 0.05° to 15° inclusive with respect to the c-plane. The semiconductor substrate includes an irregular portion on the crystal face, and the contact angle of pure water having a specific resistance of 18 MΩ·cm or more on the surface of the irregular portion is 10° or less.
-
5.发明申请DEVICE AND METHOD FOR DETOXIFYING PLASMA-TREATED WATER CONTAINING HYDROGEN PEROXIDE 审中-公开用于脱氧等离子体处理的过氧化氢水的装置和方法公开(公告)号：US20160332892A1
公开(公告)日：2016-11-17
申请号：US15141418
申请日：2016-04-28
Inventor： MASAKI FUJIKANE , MARI ONODERA , MASAHIRO ISEKI
CPC classification number: C02F1/20 , B01D19/0031 , B01D19/0078 , C02F1/283 , C02F1/36 , C02F1/4608 , C02F1/4672 , C02F2001/46152 , C02F2001/46171 , C02F2101/10 , C02F2303/04 , C02F2303/18
Abstract: A method according to an aspect of the present disclosure includes filtering plasma-treated water containing hydrogen peroxide which has been produced by generation of plasma in or near water; and applying ultrasound to the plasma-treated water after the filtering.
Abstract translation: 根据本公开的一个方面的方法包括对通过在水中或附近产生等离子体而产生的含有过氧化氢的等离子体处理水进行过滤; 并在过滤后对等离子体处理过的水进行超声处理。
-
Patent Agency Ranking
6.发明申请LIQUID TREATMENT UNIT, TOILET SEAT WITH WASHER, WASHING MACHINE, AND LIQUID TREATMENT APPARATUS 审中-公开液体处理单元，带洗涤器的洗手间座椅，洗衣机和液体处理设备公开(公告)号：US20150136673A1
公开(公告)日：2015-05-21
申请号：US14530878
申请日：2014-11-03
Inventor： MARI ONODERA , MASAKI FUJIKANE , SHIN-ICHI IMAI
CPC classification number: A47K13/302 , C02F1/4608 , C02F2303/04 , C02F2305/023 , C02F2307/12
Abstract: A liquid treatment unit includes: an inlet for supplying liquid; a flow passage tube connected to the inlet, the flow passage tube defining a circulation flow passage along which the liquid supplied from the inlet circulates; a plasma generator generates plasma in the liquid in at least a partial area of the flow passage tube; a distributor, provided midway in the flow passage tube, for distributing a portion of liquid from the liquid flowing through the flow passage tube; and an outlet, connected to the distributor, for ejecting the portion of liquid from the flow passage tube.
Abstract translation: 液体处理单元包括：用于供应液体的入口; 连接到所述入口的流路管，所述流路管限定循环流动通道，从所述入口供应的液体沿着所述循环流动通道循环; 等离子体发生器在流路管的至少一部分区域中在液体中产生等离子体; 分配器，设置在所述流路管的中途，用于从流过所述流路管的液体分配一部分液体; 以及连接到分配器的出口，用于从流动通道管中排出液体的一部分。
-
公开(公告)号：US20240264004A1
公开(公告)日：2024-08-08
申请号：US18641274
申请日：2024-04-19
Inventor： NAOKI TAMBO , KUNIHIKO NAKAMURA , MASAKI FUJIKANE , HIROYUKI TANAKA
CPC classification number: G01J5/22 , G01J5/48 , H10N19/00 , G01J2005/202
Abstract: An infrared sensor according to the present disclosure includes an output pixel, and a switcher. The output pixel includes infrared photodetectors. The switcher switches each of the infrared photodetectors between a first state and a second state independently with a predetermined period P. In the first state, the infrared photodetector is able to change in temperature in response to receiving infrared radiation. In the second state, the infrared photodetector is maintained at a predetermined temperature. Switching of the infrared photodetectors from the second state S2 to the first state S1 is executed sequentially in the period P at a predetermined time interval ti. The output pixel includes N infrared photodetectors. The time interval ti divided by the period P is greater than or equal to 1/(N+1) and less than or equal to 1/(N−1).
-
公开(公告)号：US20240068875A1
公开(公告)日：2024-02-29
申请号：US18496316
申请日：2023-10-27
Inventor： KOUHEI TAKAHASHI , MASAKI FUJIKANE , HIROYUKI TANAKA
CPC classification number: G01J5/12 , H10N10/17 , G01J2005/123
Abstract: A thermopile sensor according to the present disclosure includes a p-type portion and an n-type portion. The p-type portion has a first phononic crystal in which first holes are arranged in a plan view. The n-type portion has a second phononic crystal in which second holes are arranged in a plan view. The p-type portion and the n-type portion constitute a thermocouple. The boundary scattering frequency of phonons in the first phononic crystal is different from the boundary scattering frequency of phonons in the second phononic crystal. Alternatively, the ratio of the sum of the areas of the first holes to the area of the first phononic crystal in a plan view is different from the ratio of the sum of the areas of the second holes to the area of the second phononic crystal in a plan view.
-
公开(公告)号：US20240060824A1
公开(公告)日：2024-02-22
申请号：US18496368
申请日：2023-10-27
Inventor： KOUHEI TAKAHASHI , MASAKI FUJIKANE , KUNIHIKO NAKAMURA , ATSUSHI HIMENO , NAOKI TAMBO , YUKI NAKATA , HIROYUKI TANAKA
Abstract: An infrared sensor according to the present disclosure includes a transistor, a cavity layer, and a sensor layer. The cavity layer includes a cavity. The sensor layer includes a phononic crystal in which holes are arranged. In plan view, the infrared sensor includes a first region and a second region. The first region includes a transistor. The second region includes the cavity. The cavity layer includes a flat major surface. The major surface is disposed around the cavity, and extends across both the first region and the second region. The sensor layer is disposed on the major surface.
-
公开(公告)号：US20230088920A1
公开(公告)日：2023-03-23
申请号：US18051548
申请日：2022-11-01
Inventor： NAOKI TAMBO , MASAKI FUJIKANE , KUNIHIKO NAKAMURA , KOSEI OHURA , YASUYUKI NAITO
Abstract: An infrared sensor is provided with an infrared light receiver, a signal pathway, and a first member. The infrared light receiver has a structure in which at least two materials having different coefficients of thermal expansion are layered. The signal pathway includes a first signal pathway allowing passage of a driving signal to be applied to the infrared light receiver. The driving signal has a current value equal to or greater than a prescribed magnitude, and the infrared light receiver deforms in response to the application of the driving signal to the infrared light receiver, thereby at least a portion of the infrared light receiver contacting the first member.
-
-
-
-
-
-
-
-
-
Search Results
22
records
(took 0.044 seconds)
