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公开(公告)号：US20230309407A1
公开(公告)日：2023-09-28
申请号：US18327935
申请日：2023-06-02
Inventor： MASAKI FUJIKANE , KOUHEI TAKAHASHI , NAOKI TAMBO , YASUYUKI NAITO
IPC: H10N10/851 , H10N10/17 , H10N10/82 , G01J5/14 , G01J5/22
CPC classification number: H10N10/8556 , H10N10/17 , H10N10/82 , G01J5/14 , G01J5/22
Abstract: An infrared sensor includes a base substrate, an infrared light receiver, and a beam. The beam includes a separated portion separated from the base substrate to be suspended above the base substrate. The beam is connected at the separated portion to the infrared light receiver. The beam includes a p-type portion containing a p-type semiconductor and an n-type portion containing an n-type semiconductor. The p-type portion has a first three-dimensional structure including first recesses and a first solid portion formed between the first recesses. The first solid portion has, between the first recesses adjacent to each other in plan view, a smallest dimension of less than or equal to 100 nanometers in plan view. The n-type portion has a second three-dimensional structure including second recesses and a second solid portion formed between the second recesses. The second solid portion has, between the second recesses adjacent to each other in plan view, a smallest dimension of less than or equal to 100 nanometers in plan view. The beam satisfies at least one of following conditions (Ia) or (IIa): (Ia) the first solid portion includes a first portion having a Young's modulus of less than or equal to 80% of a Young's modulus of a first reference sample that is made of a material of a type identical to a type of a material constituting the first solid portion and that does not have recesses; and (IIa) the second solid portion includes a second portion having a Young's modulus of less than or equal to 80% of a Young's modulus of a second reference sample that is made of a material of a type identical to a type of a material constituting the second solid portion and that does not have recesses.
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公开(公告)号：US20210364458A1
公开(公告)日：2021-11-25
申请号：US17396653
申请日：2021-08-06
Inventor： KUNIHIKO NAKAMURA , MASAKI FUJIKANE , KOUHEI TAKAHASHI , NAOKI TAMBO , YASUYUKI NAITO
Abstract: A gas sensor includes a substrate, a support layer, a base layer, a heater layer disposed on or above the base layer, a gas sensing layer that is disposed on or above one of the heater layer and the base layer and that has a gas concentration dependent electrical impedance, and a detection electrode that is electrically connected to the gas sensing layer and that detects the impedance of the gas sensing layer. The substrate has a cavity and an opening formed by the cavity. The support layer is disposed on the substrate so as to cover at least an entire periphery of the opening. The base layer is supported by the support layer above the cavity so as to be separated from the substrate. A portion of the support layer in contact with the cavity has a first phononic crystal structure structured by a plurality of regularly arranged through-holes.
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公开(公告)号：US20230313936A1
公开(公告)日：2023-10-05
申请号：US18328807
申请日：2023-06-05
Inventor： MASAKI FUJIKANE , KOUHEI TAKAHASHI , NAOKI TAMBO , YASUYUKI NAITO
IPC: F16L59/02
CPC classification number: F16L59/028
Abstract: A solid material includes a three-dimensional structure including recesses and a solid portion formed between the recesses, the three-dimensional structure adjusting a thermal conductivity of the solid material by interaction with phonons, wherein a minimum size of the solid portion between the recesses adjacent to each other in plan view of the three-dimensional structure is smaller than or equal to 100 nm, and the solid portion includes a region with a Young's modulus being smaller than or equal to 80% of a Young's modulus of a reference sample that is fabricated by using the same type of material as a material of the solid portion without forming any recesses.
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公开(公告)号：US20220216388A1
公开(公告)日：2022-07-07
申请号：US17702859
申请日：2022-03-24
Inventor： MASAKI FUJIKANE , KOUHEI TAKAHASHI , NAOKI TAMBO , KUNIHIKO NAKAMURA , YASUYUKI NAITO
Abstract: A thermoelectric conversion device includes: an insulating layer; and a thermoelectric conversion module disposed on the insulating layer. The thermoelectric conversion module has a first thermoelectric conversion region and a second thermoelectric conversion region. The first(second) thermoelectric conversion region includes one or two or more thermoelectric conversion elements, a first(third) connection electrode, and a second(fourth) connection electrode. The thermoelectric conversion elements of the first(second) thermoelectric conversion region are electrically connected to the first(third) connection electrode and the second(fourth) connection electrode and located on an electric path connecting these connection electrodes. Each of the thermoelectric conversion elements includes a thermoelectric converter. The thermoelectric converter of at least one of the thermoelectric conversion elements has a phononic crystal layer having a phononic crystal structure including a plurality of regularly arranged through holes. A through direction of the plurality of through holes in this crystal structure is substantially parallel to a direction perpendicular to a principal surface of the insulating layer.
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公开(公告)号：US20210313505A1
公开(公告)日：2021-10-07
申请号：US17349738
申请日：2021-06-16
Inventor： MASAKI FUJIKANE , NAOKI TAMBO , KUNIHIKO NAKAMURA , KOUHEI TAKAHASHI , YASUYUKI NAITO
Abstract: A thermoelectric conversion element includes a p-type thermoelectric converter, an n-type thermoelectric converter, a first electrode, a second electrode, and a third electrode. One end of the p-type converter is electrically connected to one end of the n-type converter. The other end of the p-type converter is electrically connected to the second electrode, and the other end of the n-type converter is electrically connected to the third electrode. The p-type converter includes a first phononic crystal layer having a first phononic crystal structure including regularly arranged first through holes. The n-type converter includes a second phononic crystal layer having a second phononic crystal structure including regularly arranged second through holes. The through direction of the first through holes is a direction extending between the ends of the p-type converter. The through direction of the second through holes is a direction extending between the ends of the n-type converter.
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Patent Agency Ranking
公开(公告)号：US20240264004A1
公开(公告)日：2024-08-08
申请号：US18641274
申请日：2024-04-19
Inventor： NAOKI TAMBO , KUNIHIKO NAKAMURA , MASAKI FUJIKANE , HIROYUKI TANAKA
CPC classification number: G01J5/22 , G01J5/48 , H10N19/00 , G01J2005/202
Abstract: An infrared sensor according to the present disclosure includes an output pixel, and a switcher. The output pixel includes infrared photodetectors. The switcher switches each of the infrared photodetectors between a first state and a second state independently with a predetermined period P. In the first state, the infrared photodetector is able to change in temperature in response to receiving infrared radiation. In the second state, the infrared photodetector is maintained at a predetermined temperature. Switching of the infrared photodetectors from the second state S2 to the first state S1 is executed sequentially in the period P at a predetermined time interval ti. The output pixel includes N infrared photodetectors. The time interval ti divided by the period P is greater than or equal to 1/(N+1) and less than or equal to 1/(N−1).
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公开(公告)号：US20240060824A1
公开(公告)日：2024-02-22
申请号：US18496368
申请日：2023-10-27
Inventor： KOUHEI TAKAHASHI , MASAKI FUJIKANE , KUNIHIKO NAKAMURA , ATSUSHI HIMENO , NAOKI TAMBO , YUKI NAKATA , HIROYUKI TANAKA
Abstract: An infrared sensor according to the present disclosure includes a transistor, a cavity layer, and a sensor layer. The cavity layer includes a cavity. The sensor layer includes a phononic crystal in which holes are arranged. In plan view, the infrared sensor includes a first region and a second region. The first region includes a transistor. The second region includes the cavity. The cavity layer includes a flat major surface. The major surface is disposed around the cavity, and extends across both the first region and the second region. The sensor layer is disposed on the major surface.
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公开(公告)号：US20230088920A1
公开(公告)日：2023-03-23
申请号：US18051548
申请日：2022-11-01
Inventor： NAOKI TAMBO , MASAKI FUJIKANE , KUNIHIKO NAKAMURA , KOSEI OHURA , YASUYUKI NAITO
Abstract: An infrared sensor is provided with an infrared light receiver, a signal pathway, and a first member. The infrared light receiver has a structure in which at least two materials having different coefficients of thermal expansion are layered. The signal pathway includes a first signal pathway allowing passage of a driving signal to be applied to the infrared light receiver. The driving signal has a current value equal to or greater than a prescribed magnitude, and the infrared light receiver deforms in response to the application of the driving signal to the infrared light receiver, thereby at least a portion of the infrared light receiver contacting the first member.
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公开(公告)号：US20200003625A1
公开(公告)日：2020-01-02
申请号：US16566868
申请日：2019-09-10
Inventor： NAOKI TAMBO , KOUHEI TAKAHASHI , TAKASHI KAWASAKI , KUNIHIKO NAKAMURA , MASAKI FUJIKANE , YASUYUKI NAITO
Abstract: An infrared sensor according to the present disclosure includes base substrate, infrared receiver, and beam. The beam includes connective portion connecting with the base substrate and/or a member on the base substrate, and separated portion separated from the base substrate. The infrared receiver and the beam are joined with each other at the separated portion. The infrared receiver is supported by the beam in a state where the infrared receiver is separated from the base substrate. The beam includes junction part joined to the infrared receiver, and section positioned between junction part and the connective portion, and section includes a phononic crystal structure defined by a plurality of through holes orderly arranged. The crystal structure includes a first domain and a second domain that are phononic crystal domains. The first domain includes, in a plan view, a plurality of through holes arranged orderly in a first direction, while the second domain includes, in a plan view, a plurality of through holes arranged orderly in a second direction that is different from the first direction. The infrared sensor according to the present disclosure has enhanced responsivity.
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公开(公告)号：US20210313504A1
公开(公告)日：2021-10-07
申请号：US17349730
申请日：2021-06-16
Inventor： MASAKI FUJIKANE , NAOKI TAMBO , KUNIHIKO NAKAMURA , KOUHEI TAKAHASHI , YASUYUKI NAITO
Abstract: The present disclosure provides a novel multilayer body. The multilayer body of the present disclosure includes a first phononic crystal layer and a second phononic crystal layer disposed on or above the first phononic crystal layer. The first phononic crystal layer has a first phononic crystal structure including a plurality of regularly arranged first through holes. The second phononic crystal layer has a second phononic crystal structure including a plurality of regularly arranged second through holes. The through direction of the plurality of first through holes in the first phononic crystal layer is substantially parallel to the through direction of the plurality of second through holes in the second phononic crystal layer.
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